Anisotropic Spin Splitting in Step Quantum Wells

By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/Aly Ga1-yAs/AlxGal-xAs step quantum wells （QWs） are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.     

Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films

Li-N dual-doped p-type ZnO （ZnO：（Li, N）） thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex acceptor with an energy 1evel of 138 me V is identified from the free-to-neutral-acceptor （e, A0 ） emission. The Haynes factor is about 0.087 for the Lizn-No complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248 meV, also identified from the （e, A0） emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO：（Li,N）.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Intrinsic Bistability and Critical Slowing in Tm^3＋/Yb^3＋ Codoped Laser Crystal with the Photon Avalanche Mechanism

We present theoretically a novel intrinsic optical bistability （IOB） in the Tm^3＋ /Yb^3＋ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct 10B hysteresis and critical slowing dynamics around the avalanche thresholds. Such an 10B characteristic in Tm^3＋ /Yb^3＋ eodoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra.     

分子动力学模拟壁面附近流体特性及降温过程

采用三相模型计算结果表明:近壁区内流体密度呈现出"层状化"的特点,切向应力张量呈"振荡"分布;固液界面张力随温度增加而降低;进一步增强壁面浸润性,固液界面张力变化不大;同温壁面对近壁区流体特性的影响较大,近壁区之外的流体特性与两相模型吻合较好.降低壁面温度的模拟表明,当温差减小时,传热量减小,界面接触热阻占主导地位.     

9SNCR烟气脱硝工艺及CH4作添加剂的试验研究

本文介绍了在自行研制的选择性非催化还原(SNCR)烟气脱硝试验台上采用改进型TB系列喷嘴深入烟道内部逆流喷入的方式,进行了冷态混合试验和气态氨作还原剂及CH4作添加剂的热态脱硝试验.深入烟道内部的喷入方式在提高喷入气体与烟道主气流的混合效果上明显优于侧壁圆孔喷入.在NH3/NOx=1.25,反应温度为925℃时可得到82.53%的脱硝效率,有CH4作添加剂时,温度为875℃时可得到72.37%的脱硝效率.以NOx去除率高于50%为标准,温度窗口为863～937℃;有CH4作添加剂的温度窗口为803～929℃.随着氨氮比的增大NOx去除效率也增大,但在最优温度下当氨氮比大于1.0后NOx去除率的增大不再明显.随着温度的升高,达到NOx最大去除率所需的CH4添加量减小,CH4作添加剂可大大减小氨的泄漏量.     

不同等离子体积力模型诱导流动对比研究

基于不同等离子简化模型,对比研究了5 kV电压下等离子诱导流场.结果表明,由于假定电荷分布依赖于电势分布,模型一导致体积力过大,诱导流场速度最大达6 m/s;模型二中内外电场叠加并根据实验拟合壁面电荷分布,最大诱导速度仅为1 m/s,与实验结果接近;而模型三由于不易选取合理的电场强度分布线性化参数,最大诱导速度达7 m/s,也与实验结果相差较大.     

宽带多普勒声纳信号频谱特性分析

宽带多普勒声纳采用重复相位编码技术和脉冲-脉冲相关技术,解决了窄带技术存在的距离分辨力和速度分辨力的矛盾。本文主要研究了重复相位编码信号的频谱特性,并与矩形正弦填充脉冲的频谱进行比较,同时研究了回波信号的频谱特性,推导出频域上的测速公式,并根据回波的频谱特性分析了宽带多普勒声纳产生测速模糊的原因,并提出一种解决测速模糊的方法。     

Terahertz emission in tenuous gases irradiated by ultrashort laser pulses

Mechanism of terahertz (THz) pulse generation in gases irradiated by ultrashort laser pulses is investigated theoretically. Quasi-static transverse currents produced by laser field ionization of gases and the longitudinal modulation in formed plasmas are responsible for the THz emission at the electron plasma frequency, as demonstrated by particle-in-cell simulations including field ionization. The THz field amplitude scaling with the laser amplitude within a large range is also discussed.     

基于多层膜技术的硬X射线Laue透镜衍射效率的理论研究

采用耦合波理论分析了X射线在多层膜Laue透镜中的传播,选择Cu的Kα线作X射线光源,计算了多层膜Laue透镜的衍射效率.材料为WSi2/Si,最外层宽度为10 nm,深度为8 500 nm的多层膜Laue透镜,倾斜情况下外层区域局部光栅的衍射效率可达59%,理论上证明了多层膜Laue透镜是实现X射线聚焦的有效手段.