Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD

ZnO films are grown on Si （111） substrates by a metal organic chemical vapor deposition method. Samples with different stoichiometric composition of Zn and 0 are obtained by varying Ⅱ/Ⅵ molar ratio between 3 and 1/3 in precursors. The x-ray photoelectron spectroscopy and photoluminescenee results show that the ultraviolet emission enhances with the increasing Zn/O composition ratio of the samples. It is suggested that the supertfluous Zn atoms pile up at interstitial positions to form Zn interstitial defects. The radiated recombination of the coupling of free exeitons with donor Zn interstitial enhances the ultraviolet emission of the samples.     

Terahertz Quantum Cascade Laser Operating at 2.94THz

The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm2 and an internal quantum efficiency of 1.57 × 10-2 per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T0 = 57.5 K.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

大高良姜中活性物质的分子光谱研究

1′-乙酰氧基胡椒酚乙酸酯的抗菌、抗癌等生物活性正逐渐为国内外的研究证实,是一具有前景广阔的化合物,而植物大高良姜是其丰富的天然来源之一。本文采用不破坏样品原始性状的红外光谱与拉曼光谱技术对从大高良姜中提取提纯的生物活性物质进行了分子光谱的表征与结构分析,为其进一步的开发利用提供鉴别的依据。     

微波消解-FAAS测定6种龙胆科植物花中微量元素的含量

选用硝酸和双氧水(5∶1)的混合消解液对样品进行微波消解,采用火焰原子吸收光谱法测定了云雾龙胆,管花秦艽,线性龙胆,黄管秦艽,麻花秦艽,蓝玉簪龙胆花这6种龙胆科植物花中的Ca、Mg、Cu、Fe、Mn、Zn6种微量元素的含量。该方法的加标回收率为96.53%—100.11%,相对标准偏差(RSD)小于3%,具有良好的准确度和精密度。研究结果显示,6种龙胆科植物花微量元素含量丰富,其中Mg、Ca、Fe的含量普遍较高,不同龙胆花中各元素的含量均有一定差异。本试验为这些龙胆花药材的合理药用及进一步的开发利用提供了可靠依据。     

64通道一维位置灵敏电流分布探测器及其数据获取系统

针对高流强粒子束与绝缘毛细管相互作用的特点, 设计制作了一套64通道一维位置灵敏电流分布探测器及其配套的数据获取系统, 该探测器可分辨最小直径为1 mm的束斑, 通过数据获取系统可实现可视化自动数据采集。 用2 nA和200—2000 eV电子对探测器进行了定标, 并用10 μA和2000 eV的电子束穿越锥形毛细管后的出射电子, 对探测器及数据获取系统进行测试, 获得了出射粒子的位置分布谱及能量信息。 A 64 channel position sensitive current distribution detector with 1 mm position resolution was developed, while the data acquisition system is based on the LabVIEW software. The test result obtained by using a 2 nA, 200—2000 eV electron beam deflecting by different voltages and the position spectra of 10 μA, 2000 eV electrons transmitted through a glass capillary was measured. The result indicated that the detector can be used to detect the charged particles with strong beam current through the capillary.     

基于FPGA的实时图像增强设计

局部直方图均衡是以全局直方图均衡化方法为基础,对图像中每个像素点所在的邻域范围求出灰度转换函数,然后仅应用在该中心点处。为了提高算法的运算速度,特别是在处理视频图像时,采取传统的DSP的设计方法在速度上很难满足需要,因此,利用FPGA实现是一个很好的选择。为使局部直方图均衡方法能够在FPGA上具体实现,从空间域的角度改进了图像灰度直方图均衡算法,并利用VHDL语言对算法进行了完全可综合的RTL级描述,最后在硬件平台上验证了结果。     

关于光学元件面形评价参数峰谷值(PV)的分析

 光学元件的表面面形或波前质量一般采用数字指标峰谷值PV(表面最高点和最低点之差)来评价。而两点PV在高分辨率干涉仪的测量结果中具有很大不确定性。为了更准确地评价光学元件的表面面形或波前质量,讨论了针对两点PV进行改进后的评价方式PV20,PVr,PVq。通过模拟实验证明其可以描述真实波面,并在实验中证明其可以消除灰尘等杂点对测量结果带来的干扰,以及这几种评价方式对CCD分辩率的变化不敏感,并发现上述3种方式在测量重复性方面也有较好的表现。     

纤锌矿型量子级联激光器的界面与受限声子比较(英文)

利用传输矩阵方法对纤锌矿型量子级联激光器有源区的界面与受限声子进行了研究.计算结果显示:在纵光学频域有一组界面声子与二组受限声子存在,而且最低频率的两个界面声子在一定条件下能转变为受限模式.通过比较界面声子与受限声子的色散及声子势发现两者有很大不同,且计算电声散射速率可以发现由这两种声子引起的散射率是可比拟的.     

Curvature Estimates for the Level Sets of Solutions to the Monge-Ampère Equation det D~2u = 1

For the Monge-Amp`ere equation det D2u = 1, the authors find new auxiliary curvature functions which attain their respective maxima on the boundary. Moreover, the upper bounded estimates for the Gauss curvature and the mean curvature of the level sets for the solution to this equation are obtained.