Entanglement system,Casimir energy and black hole

We investigate the connection between the entanglement system in Minkowski spacetime and the black hole using the scaling analysis. Here we show that the entanglement system satisfies the Bekenstein entropy bound. Even though the entropies of two systems are the same form, the entanglement energy is different from the black hole energy. Introducing the Casimir energy of the vacuum energy fluctuations rather than the entanglement energy, it shows a feature of the black hole energy. Hence the Casimir energy is more close to the black hole than the entanglement energy. Finally, we find that the entanglement system behaves like the black hole if the gravitational effects are included properly.     

基于密度泛函理论的叶绿素A性质的研究

在液相环境中,采用密度泛函理论(DFT)、含时密度泛函理论(TD-DFT)、Multiwfn波函数分析软件,在pbepbe/6-311g(d)基组水平上,计算并分析了叶绿素A的结构、紫外光谱和电子—空穴分布,结果表明:pbepbe/6-311g(d)方法是计算叶绿素A紫外吸收光谱更精确的方法;叶绿素A分子的吡咯环与取代基相互作用的过程中,吡咯环Ⅳ受侧链"尾巴"的影响最大;理论计算的紫外光谱与实验数据吻合较好,其中635.71 nm和446.87 nm处的两个吸收峰可认为是叶绿素A的特征吸收峰;侧链或取代基团在叶绿素A激发过程中是给电子体,卟啉"头"既是电子供体,也是电子受体.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Different effects of cerium ions doping on properties of anatase and rutile TiO2

Pure and Ce⁴⁺ doped anatase and rutile TiO₂ were prepared by hydrothermal methods and characterized by XRD, TEM, UV-vis diffusion spectroscopy, and XPS measurements. The photocatalytic reactivity of the catalysts was evaluated by the photodegradation of Rhodamine B (RB) under ultraviolet irradiation. The photocatalytic efficiency of the rutile sample doped with an appropriate amount of Ce⁴⁺ was enhanced while all Ce⁴⁺ doped anatase samples showed a much lower activity than pure anatase. The reasons were discussed     

基于统计滤波的单幅散斑条纹图的相位恢复技术

基于统计信号处理技术的贝叶斯（Bayes）估计原理，提出一种新的滤波方法。该方法能有效减少散斑条纹图中的噪声，而且仅用一幅散区斑条纹图就能获得准确的条纹相位分布，通过实例说明了该方法的处理过程。     

1-(2,6-二溴-4-硝基苯)-3-(4-硝基苯)-三氮烯与锌的显色反应研究

研究了 1- (2 ,6-二溴 - 4 -硝基苯 ) - 3- (4 -硝基苯 ) -三氮烯 (DBNPNPT)与锌的显色反应。在表面活性剂Triton X- 10 0的存在下 ,p H=9.0— 11.0的 Na2 B4 O7- Na OH介质中 ,DBNPNPT与锌 ( )可生成橙黄色络合物。建立以 5 35 nm为参比波长 ,4 4 0 nm为测定波长的双峰双波长测定法 ,该络合物的表观摩尔吸光系数为 1.34× 10 5L· mol-1· cm-1。对葡萄糖酸锌中的锌直接测定 ,结果令人满意     

红外光谱对碱土金属二元羧酸盐结构的研究

研究了三十种二元羧酸金属盐的红外光谱，讨论了金属离子和二元酸的种类对二元酸盐配位结构的影响。发现Mg盐、Ba盐，Sr盐为螯合配位，Ca盐，Zn盐中同时存在螯合配位和桥式配位，二元酸的种类对羧酸盐配位结构没有影响。对羧酸盐在常温和熔融后的栩位方式和结构上的差异的研究结果表明，Mg盐，Ca盐与Sr盐，Ba盐在熔融后的结构变化不同。     

15.14MeV/u 136Xe离子引起的单粒子效应

研究了15.14MeV/u ¹³⁶Xe离子在不同批次的32k×8bits静态存储器中所引起的单粒子效应.获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系.将单粒子效应截面与灵敏区中沉积的能量相联系,而不是线性能量转移(LET)值.估计了灵敏体积的深度和死层的厚度.     

工作点测量系统在合肥光源的应用研究

 介绍了利用合肥光源(HLS)的工作点测量系统进行一些束流参数的测量及其应用研究，这些参数包括工作点、β函数；自然色品以及中心频率。同时还进行了清洗电极对工作点的影响的测量。给出了一些测量结果，测量结果与理论计算值相当吻合。     

用于ICF驱动器的取样光栅的矢量分析与计算

 在ICF的终端光学聚焦系统中，采用取样光栅(BSG)将透射的三倍频光按一定比例送入能量计中进行能量诊断。本文采用精确耦合波矢量分析方法分析了衍射效率与光栅周期、刻槽深度、占空比等的关系，为光栅的实际制作提供了一些有意义的结果。