Performance of the plugged-in ^22Na based slow positron beam facility

The Beijing intense slow positron beam facility is based on the 1.3GeV linac of Beijing Electron-Positron Collider (BEPC) aiming to produce mono-energetic intense slow positron beam for material science investigation. The plugged-in ²²Na based slow positron beam section has been newly constructed to supply continuous beam time for the debugging of positron annihilation measurement stations and improve the Beijing intense slow positron beam time using efficiency. Performance testing result of the plugged-in ²²Na based slow positron beam facility are reviewed in this paper, with the measurement of the beam transport efficiency, the view of beam spot, the adjustment of beam position, the measurement of beam intensity and energy spread etc. included.     

Design and simulation of the wire scanner for the injector linac of BEPCⅡ

BEPCⅡ, the upgrade project of Beijing Electron Positron Collider (BEPC), is an accelerator with large beam current and high luminosity, so an efficient and stable injector is required. Several beam diagnostic and monitoring instruments are used. A new diagnostic instrument — wire scanner, has been designed and will be used to measure the profile of the linac beam of BEPCⅡ. This paper describes the prototype of this system and the cause of heat generating of the wire. Some simulation results of the heat and force by using finite element method software—ANSYS^®,2) are presented and discussed.     

Sudden Death of Entanglement between Two Atoms with Initial Tripartite Entangled State in the Tavis--Cummings Model

We study the entanglement dynamics of two atoms with initial tripartite entangled W-like state in the Tavis-Cummings model. We find that the entanglement evolvement is sensitive not only to the entanglement degree of the initial state but also to the concrete form of the initial state. The so-called sudden death effect occurs only for some initial states.     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

Stationary Fluid Dynamic Behaviour of V-Shaped Diffuser/Nozzle Elements for Valveless Micropump

A novel type of V-shaped （isosceles triangle cross-section） diffuser/nozzle element is proposed for use for valveless micropump. Stationary fluid dynamic behaviour of V-shaped diffuser/nozzle elements in a valveless micropump is investigated by experiment and simulation. Both the results agree well with each other when the Reynolds number is higher than 100 and the pressure loss coefficient ratio of micropump nearly always keeps a constant. For a single V-shaped diffuser, the general trends of variation of pressure loss coefficient with opening angle and Reynolds number are opposite in small and large angles. Compared with conical and flat-wall diffusers, V-shaped diffuser shows the smallest pressure loss when the Reynolds number is 200.     

BEPCII Injector Linac Upgrade and Beam Instabilities

The upgrade project of the Beijing Electron Positron Collider （BEPCII） and its injector linac is working well. The linac upgrade aims at a higher injection rate of 5OmA/min into the storage ring, which requires an injected beam with low emittance, low energy spread and high beam orbit and energy stabilities. This goal is finally reached recently by upgrading the linac components and by dealing with rich and practical beam physics, which are described in this study.     

Simulation of Photocurrents of Terahertz Quantum-Well Photodetectors

We theoretically simulate the influence of the scattering processes of the electrons in the continuum states on the shapes of the photoeurrent spectra of THz quantum well photodetectors. The width of the photocurrent peak should be wider according to the uncertainty relation when these scattering processes lead to shorter relaxation time. We take a simple approximation model to include this influence and calculate the photocurrent spectra, which axe in agreement with experimental results qualitatively.     

Temperature Controlled Filamentation in Argon Gas

Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas.     

Magnetoresistance of Multiwalled Carbon Nanotube Yarns

We measure zero-field resistivity and magnetoresistance of multiwalled carbon nanotube yarns （CNTYs）. The CNTYs are drawn from superaligned multiwalled carbon nanotube arrays synthesized by the low-pressure chemical vapour deposition method. The zero-field resistivity shows a logarithmic decrease from 2 K to 300K. In the presence of a magnetic field applied perpendicular to the yarn axis, a pronounced negative magnetoresistance is observed. A magnetoresistance ratio of 22% is obtained. These behaviours can be explained by the weak localization effect.     

Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.