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991.
We present a scheme for employing a violet extended-cavity diode laser in experiments with single, trapped ions. For this the grating-stabilised laser is spatially and spectrally filtered and referenced to a Fabry–Pérot cavity. We measure an upper limit to the line width by observing a 305-kHz FWHM beat note with the second harmonic of a titanium sapphire laser. The laser is subsequently used to optically cool a single 40Ca+ ion close to the Doppler limit. PACS 03.67.Lx; 32.80.Pj; 42.55.Px  相似文献   
992.
Harper equations are derived for a px, py electronic system. Analysis is carried out for extreme points of the quasi-continuous spectrum in the cases when the number of magnetic flux quanta through a unit cell is a rational number and calculations are made for square and triangular lattices as well as for a honeycomb lattice with two nonequivalent atoms. The possibility of application of the results for explaining the fractional Hall effect is considered.  相似文献   
993.
We use frequency-dependent capacitance–voltage spectroscopy to study the dynamic charging of self-assembled InAs quantum dots. With increasing frequency, the AC charging becomes suppressed, beginning with the low-energy states. By applying an in-plane magnetic field, we generate an additional magnetic confinement that alters the tunneling barrier and hence the charging dynamics. In traveling through the potential barrier, the electrons acquire an additional momentum k0, proportional to the magnetic field B. As the tunneling is enhanced, when k0 matches the maximum of the electronic wave function Ψ (in momentum representation), we are able to map out the shape of Ψ by varying B.  相似文献   
994.
梁俊奇  张志宏  赵玲 《数学季刊》2003,18(3):264-270
§ 1. Introduction  Anecessaryandsufficientconditionandasufficientconditiontoensurethataset valuedmappingandasingle valuedmappinginacompletemetricspaceandacompleteconvexmetricspacehavingacommonfixedpointarerespectivelygivenin [1 ] .Meanwhilethemainresultsin[2 ]— [5]areimprovedandextendedin [1 ] .Inthispaper ,theexistenceatcommonfixedpointsoftwoset valuedmappingandasing valuedmappingwerestudied ,andthecorrespond ingresultsin [1 ]— [5]wereextendedandimproved .Let(X ,d)beanon emptymetricspa…  相似文献   
995.
The supercritical Marangoni convection has been studied in a plane-parallel liquid layer, bounded by a free deformable gas-liquid interface from above and by a low-heat-conductivity wall from below, occurring under conditions of inhomogeneous heating in the horizontal plane. In a longwave approximation with a small inhomogeneity of heat flux, the process is described by a system of two-dimensional nonlinear equations for the temperature perturbations, vorticity, and free surface deformation. The concept of quasiequilibrium, implying stability of long-range flows, is introduced, which allows the inhomogeneous heat flux to be modeled by a step function. The linear stability is analyzed in the cases of planar and axisymmetric heat fluxes. The boundaries of stability of the convection regimes are determined on the plane of parameters characterizing the degree of supercriticity inside a heated spot and the depth of damping outside the spot. For an axisymmetric spot, the domains of stability with respect to perturbations for various azimuthal numbers are established.  相似文献   
996.
We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.  相似文献   
997.
We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.  相似文献   
998.
999.
The logarithmic decrement and shear modulus of a bulk amorphous Zr52.5Ti5Cu17.9Ni14.6Al10 alloy were studied with an inverse torsion pendulum in the range from room temperature to the crystallization temperature and in the frequency range 5–40 Hz. The activation energy spectra of reversible and irreversible structural relaxation were estimated. The results obtained are discussed in the context of a two-energy-level model.  相似文献   
1000.
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