Nonlinear effects in optical fibers

The basic differential equations necessary to represent nonlinear propagation of short and ultrashort optical pulses in dielectric waveguides are derived. After introducing fundamental and higher-order soliton solutions of the nonlinear Schroedinger equations, the possibilities of realizing soliton-based communication systems are discussed. Higher-order nonlinear effects associated with selj-Raman gain and optical amplification in connection with the use of active fibers are also described.     

Measurement of acoustic particle velocities in enclosed sound field: Assessment of two Laser Doppler Velocimetry measuring systems

The performances of two Laser Doppler Velocimetry (LDV) systems adapted for measuring the acoustic particle velocities are assessed in enclosed sound field. This assessment is performed by comparing the acoustic velocities measured by means of LDV to reference acoustic velocities estimated from sound pressure measurements. The two LDV systems are based on a single optical bench which delivers an optical signal called Doppler signal. The Doppler signal, which is frequency modulated, is analyzed by means of two signal processing systems, the BSA (Burst Spectrum Analyser from Dantec) on the one hand, and a system specifically developed for the estimation of the acoustic velocity on the other hand. Once the experimental setup has been optimized for minimizing the errors made on the reference velocities, the assessment is performed and shows that both systems can measure the acoustic velocity in enclosed field in two the frequency ranges [0-4 kHz] and [0-2 kHz] respectively for acoustic velocity amplitudes of 10 mm/s and 1 mm/s.     

Exterior problem for the two-dimensional compressible Euler equation

In this paper we show the existence of a solution, on any time intervals, in suitable Sobolev spaces for the 2D compressible Euler equation in the exterior domain, when the Mach number is sufficiently small. We shall extend results obtained in [8] in the case of an infinity velocity different from zero.

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Sunto In questo lavoro proviamo l'esistenza di una soluzione, su ogni intervallo temporale, in opportuni spazi di Sobolev per le equazioni di Eulero 2D comprimibili in un dominio esterno, quando il numero di Mach è sufficientemente piccolo. Estenderemo i risultati ottenuti in [8] al caso di velocità all'infinito diversa da zero.

     

Positive value of information in games

We exhibit a general class of interactive decision situations in which all the agents benefit from more information. This class includes as a special case the classical comparison of statistical experiments à la Blackwell. AMS 2000 Subject Classification:Primary 91A35.The work of Bruno Bassan and Marco Scarsini was partially supported by MIUR-COFIN. The authors express their thanks to Sylvain Sorin for enlightening comments.     

On possible spin injection at non-ideal Schottky contacts

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.     

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.