On possible spin injection at non-ideal Schottky contacts

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.     

Gradient- and Sensitivity-Enhanced TOCSY Experiments

A pulsed field gradient version of the sensitivity-enhanced 2D TOCSY experiment is proposed which yields high-quality spectra with improved sensitivity and a minimum of two scans pert₁increment. For rapid acquisition of 1D TOCSY spectra, the 1D DPFGSE–TOCSY experiment was modified to include phase-encoded multiple-selective excitation followed by a simple spectral editing. Combination of these two building blocks is used in a sensitivity-enhanced 2D analog of the 3D TOCSY–TOCSY experiment which provides an efficient tool for resolving severely overlapped signals of oligomers in short experimental time.     

超重元素(新核素)合成研究进展情况分析和展望

本文在介绍和分析国际、国内在超重元素（新核素）合成实验研究与理论研究进展情况的基础上对我国今后如何从理论与实验的结合上开展超重元素（核）合成研究工作提出一些看法和建议，提供讨论。     

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.     

Gold ultra-microelectrode arrays: application to the steady-state voltammetry of hydroxide ion in aqueous solution.

Gold ultra-microelectrode arrays are used to explore the electrochemical oxidation of hydroxide ions and are shown to be analytical useful. Two types of ultra-microelectrode arrays are used; the first consist of 256 individual electrodes of 5 microm in radius, 170 of which are electrochemically active in a cubic arrangement which are separated from their nearest neighbour by a distance of 100 microm. The second array compromises 2597 electrodes of 2.5 microm in radius and of which 1550 of which are electrochemically active in a hexagonal arrangement separated by the nearest neighbour by 55 microm. Well defined voltammetric waves are found with peak currents proportional to the concentration of hydroxide ions in the range 50 microM to 1 mM. Detection limits of 20 microM using the 170 ultra-microelectrode and 10 microM with the 1550 ultra-microelectrode array are shown to be possible but with a higher sensitivity of 4 mA M(-1) observed using the 1550 ultra-microelectrode array compared to 1.2 mA M(-1) with the 170 ultra-microelectrode array.     

Benzenoid Molecules with Uniform Distribution of π-Electrons within Rings

In a recent work it was demonstrated that in linear hexagonal chains the distribution of π-electrons into rings (as computed by means of the Randić–Balaban method) is uniform, irrespective of the nature of the terminal fragments. We now establish that an analogous, yet somewhat more complex, uniformity in the π-electron distribution exists also in double linear hexagonal chains, as well as in some other benzenoid systems.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.     

Weak and Strong Solutions for the Stokes Approximation of Non-homogeneous Incompressible Navier-Stokes Equations

In this paper,the Dirichlet problem of Stokes approximate of non-homogeneous incompressibleNavier-Stokes equations is studied.It is shown that there exist global weak solutions as well as global andunique strong solution for this problem,under the assumption that initial density ρ_0(x)is bounded away from0 and other appropriate assumptions(see Theorem 1 and Theorem 2).The semi-Galerkin method is applied toconstruct the approximate solutions and a prior estimates are made to elaborate upon the compactness of theapproximate solutions.     

Kaon production in\bar pp interactions at c.m. energies from 200 to 900 GeV

A detailed analysis ofK _s ⁰ production in \(\bar pp\) |<2.5 the average transverse momentum is found to be 0.53±0.07 GeV/c at 200 GeV and 0.62±0.08 GeV/c at 900 GeV, which is an increase with respect to data at c.m. energies below 60 GeV. TheK _s ⁰ production cross sections in inelastic collisions are 29±4 mb at 200 GeV and 63±6 mb at 900 GeV, showing an increase compared to lower energy data. The central kaon density is found to increase as a logarithmic function of energy. At 900 GeV, where statistics are sufficient to allow one to draw conclusions, the average transverse momentum is higher in events with large charged multiplicity than in events with low multiplicity.