激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.     

Preparation and structural stability investigation of CoN/CN soft X-ray multilayers

The structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering has been investigated by using complementary measurement techniques. The high temperature annealing results imply that the destructive threshold of the Co/C multilayers is improved by 100–200 degrees centigrade through doping with N. The low-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4 % at 400°C, and the interface pattern still exists even if they were annealed at 700°C. The Raman spectra analyses give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping N with atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra analyses present the information of the existence of the strong covalent bonding betweenC andN atoms, and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc-Co and hcp-Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420°C, leading to the suppression of the grain growth.     

全固态多波长飞秒脉冲激光系统

利用棱镜对引进频谱空间啁啾来补偿飞秒脉冲激光二次谐波产生中的相位失配,提高了倍频效率建立了一套全固态、多波长(1065nm, 532nm,823.1nm, 402nm)飞秒脉冲激光系统自制的Nd:YVO4激光器输出532nm绿光激光,最高平均功率可达5.6W当用2.5W绿光激光泵浦时,从自制的钛宝石激光器及经BBO倍频可分别输出中心波长为823.1nm和402nm,平均功率300mW和73mW,谱宽32.3nm和5.1nm,脉宽22fs和33.3fs、重复率108MHz的近红外和蓝光激光整个系统具有结构紧凑、倍频效率高、运行稳定的特点.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

膨胀的热夸克胶子物质的中等质量双轻子的增强

基于一个描述夸克胶子火柱演化的相对论流体力学模型,研究了夸克相、强子相互作用以及非热过程(DrellYan对、粲强子衰变)的中等质量双轻子的产生.发现由于相边对夸克胶子物质演化的影响和RHIC能量核碰撞产生的夸克胶子物质具有高的初始温度,夸克相对双轻子的贡献显著增强,比那些来自强子相互作用的贡献重要,甚至能与来自非热的贡献比较.表明中等质量双轻子的增强是一个在核碰撞中产生了夸克胶子物质的可能信号. 关键词： 夸克-胶子物质 双轻子增强 相对论流体力学模型     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

Engineering issue study of triple harmonic method for in situ flying height analysis

In situ flying height testing technology is becoming more and more important in slider–disk interaction analysis and manufacturing quality control of disk drives and head-related components. Triple harmonic method is a quite promising choice for in situ flying height analysis, compared with other in situ methods reported up to now. This paper reports results of investigations on engineering issues of applying triple harmonic method for in situ flying height analysis. The paper reports results of analysis on the effects of various testing conditions on flying height testing repeatability and accuracy. Results suggest that working at reasonable high channel density and working on the ratio between third and first harmonics will be an advantage in terms of both flying height testing sensitivity and testing repeatability. Comparing with media thickness effect, the gap-length variation among different heads will be important if it is to study flying height difference among different heads and the testing is at high channel density. Also, it is suggested to work at AC erased track, in order to reduce the non-linearity caused by hard transition.     

新型金属杂冠醚配合物18-MC-6[Mn6(4-Amashz)6(DMF)6]·12DMF的合成

合成了一种新型金属杂冠醚配合物[Mn6(4-amashz)6(DMF)6]·12DMF,并用X射线衍射法对其结构进行了表征.研究了该化合物修饰金电极催化氧还原的性质,结果表明,该化合物具有平面碟状结构,对在碱性溶液中的氧有显著的催化还原作用.