AGS能量下π~－π~－的Bose—Einstein关联

全同粒子间的玻色－爱因斯坦关联可以用来研究相对论性核碰撞中次级粒子源分布及有关的物理问题．本文用强子级联模型（ＨＣＭ）模拟２８Ｓｉ（１４．６ＡＧＣＶ／ｃ）＋Ａｕ反应，得到π－粒子的ｆｒｅｅｚｅ－ｏｕｔ状态，进而计算了π－π－关联函数，取得与实验一致的结果．还计算了ｆｒｅｅｚｅ—ｏｕｔπ－源的均方根线度，并讨论了它与拟合方法抽取的源参数间的关系．     

Symmetric Hilbert spaces arising from species of structures

Symmetric Hilbert spaces such as the bosonic and the fermionic Fock spaces over some lsquo;one particle space’ are formed by certain symmetrization procedures performed on the full Fock space. We investigate alternative ways of symmetrization by building on Joyal's notion of a combinatorial species. Any such species F gives rise to an endofunctor of the category of Hilbert spaces with contractions mapping a Hilbert space to a symmetric Hilbert space with the same symmetry as the species F. A general framework for annihilation and creation operators on these spaces is developed, and compared to the generalised Brownian motions of R. Speicher and M. Bożejko. As a corollary we find that the commutation relation with admits a realization on a symmetric Hilbert space whenever f has a power series with infinite radius of convergence and positive coefficients. Received: 7 April 2000; in final form: 28 November 2000 / Published online: 19 October 2001     

Preperfect graphs

We say that a vertexx of a graph is predominant if there exists another vertexy ofG such that either every maximum clique ofG containingy containsx or every maximum stable set containingx containsy. A graph is then called preperfect if every induced subgraph has a predominant vertex. We show that preperfect graphs are perfect, and that several well-known classes of perfect graphs are preperfect. We also derive a new characterization of perfect graphs.     

Asymmetric hydrogenation of alkyl(vinyl)thioethers: a promising approach to α-chiral thioethers

This paper describes the enantioselective hydrogenation of vinylthioethers. We show that thioether derivatives of maleic esters can be hydrogenated with full conversion and up to 60% ee, and that α-thioether cinnamic acids can be hydrogenated in 51% ee with modest conversion.     

Peripheral spectrum of positive quasi-compact operators onC 0(X)

LetX be a locally compact space, andT, a quasi-compact positive operator onC ₀(X), with positive spectral radius,r. Then the peripheral spectrum ofT is a finite set of poles containingr, and the residue of the resolvent ofT at each peripheral pole is of finite rank. Using the concept of closed absorbing set, we develop an iterative process that gives the order,p, ofr, some special bases of the algebraic eigenspaces ker(T-r) ^p and ker(T ^*-r) ^p , and finally the dimension of the algebraic eigenspace associated to each peripheral pole.     

Algebraic cycles and topology of real Enriques surfaces

For a real Enriques surface Y we prove that every homology class in H₁(Y (R), Z/2) can be represented by a real algebraic curve if and only if all connected components of Y(R) are orientable. Furthermore, we give a characterization of real Enriques surfaces which are Galois-Maximal and/or Z-Galois-Maximal and we determine the Brauer group of any real Enriques surface Y.     

High-energy gamma-rays accompanying the spontaneous fission of 252Cf

The γ-ray spectrum of ²⁵²Cf(sf) was measured in the Darmstadt-Heidelberg Crystal Ball spectrometer, with a double ionization chamber mounted inside to detect the fission fragments. The measurement was aimed at a better understanding of an unusual component found in the high-energy region between 3 and 8 MeV, with fragment mass splits near symmetry. This component was proved to be predominantly emitted by the heavier fragment, to reach its highest intensity at a fragment mass split of 132:120, and to have an almost isotropic angular distribution. Calculations with the statistical code CASCADE could reproduce the main features.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型