16‐(4‐Cyano­benzyl­idene)‐17‐oxo­androst‐5‐en‐3β‐ol

In the title compound, 4‐(3β‐hydroxy‐17‐oxoandrost‐5‐en‐16‐ylidenemethyl)benzonitrile, C₂₇H₃₁NO₂, rings A and C of the steroid nucleus are in chair conformations. The central six‐membered ring B is in an 8β,9α‐half‐chair conformation, while the five‐membered ring D adopts a 13β,14α‐half‐chair conformation. The cyano­benzyl­idene moiety has an E configuration with respect to the carbonyl group at position C17. The dihedral angle between the planes of the steroid nucleus and the cyano­benzyl­idene moiety is 22.61 (15)°. Intermolecular O—H⃛N hydrogen bonds formed between the hydroxyl group of the steroid and the N atom of the cyano­benzyl­idene moiety of symmetry‐related mol­ecules link the steroid mol­ecules into chains which run parallel to the b axis.     

Role of oxygen and carbon on donor formation in step-annealed CZ-silicon

Step-annealing schedules for two different annealing chains, i.e. 450-650-450 and 650-450-700 °C have been followed to study the effect of oxygen and carbon on donor formation in carbon-rich Czochralski-silicon. It has been found that the annealing time does not have reasonable effect on substitutional carbon atoms. On the other hand, interstitial oxygen atoms are drastically reduced depending on annealing temperature. Carbon concentration does not exhibit any relationship with new donor (ND) concentration. The result suggests that the ND formation is not controlled by the substitutional carbon concentration directly, but by a density of some unknown embryos. The energy of formation of NDs was found to be 1.84 eV. All these results with plausible explanation are reported here.     

Composite high resolution localized relaxation scheme based on upwinding for hyperbolic conservation laws

In this work we present an upwind‐based high resolution scheme using flux limiters. Based on the direction of flow we choose the smoothness parameter in such a way that it leads to a truly upwind scheme without losing total variation diminishing (TVD) property for hyperbolic linear systems where characteristic values can be of either sign. Here we present and justify the choice of smoothness parameters. The numerical flux function of a high resolution scheme is constructed using wave speed splitting so that it results into a scheme that truly respects the physical hyperbolicity property. Bounds are given for limiter functions to satisfy TVD property. The proposed scheme is extended for non‐linear problems by using the framework of relaxation system that converts a non‐linear conservation law into a system of linear convection equations with a non‐linear source term. The characteristic speed of relaxation system is chosen locally on three point stencil of grid. This obtained relaxation system is solved using composite scheme technique, i.e. using a combination of proposed scheme with the conservative non‐standard finite difference scheme. Presented numerical results show higher resolution near discontinuity without introducing spurious oscillations. Copyright © 2008 John Wiley & Sons, Ltd.     

Electroluminescence in the phosphor anthracene doped by 9-vinylanthracene

Electroluminescence has been excited in the phosphor anthracene doped by 9-vinylanthracene (10⁻⁴ mole %) at room temperature (300°K). Variation of light output with voltage is governed by the relationB=B ₀ exp [−(C/V ^1/2)] as in the case of inorganic phosphors. HereB ₀ andC are constants andV is the rms value of the voltage applied to the phosphor. Frequency dependence of the electroluminescence has also been studied at different voltages of the applied electric field.     

Analysis of lattice thermal conductivity of GaAs at high temperatures

The lattice thermal conductivity of GaAs has been analysed in the entire temperature range 100–800 K in the frame of the Sharma-Dubey-Verma (SDV) model of phonon conductivity, and very good agreement has been found between the calculated and experimental values of the lattice thermal conductivity in the entire temperature range of study. The temperature exponentm(T) for the three-phonon scattering relaxation rate for GaAs has also been calculated in the above temperature range. The separate percentage contributions due to transverse and longitudinal phonons have also been studied.

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Zusammenfassung Die Gitter-Warmeleitfähigkeit von GaAs wurde im Temperaturbereich zwischen 100 und 800 K im Rahmen des Modells der Phononen-Leitfähigkeit von Sharma-Dubey-Verma (SDV) untersucht und eine sehr gute übereinstimmung zwischen den berechneten und Versuchswerten der Gitter-Wärmeleitfähigkeit im ganzen untersuchten Temperaturbereich gefunden. Der Temperaturexponentm=m(T) für die Drei-Phonenen-Streuungs-Relaxationsgeschwindigkeit bei GaAs wurde im obengenannten Temperaturbereich ebenfalls berechnet. Die durch transversale und longitudinale Phonone verursachten einzelnen prozentualen Beiträge wurden ebenfalls untersucht.

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Résumé La conductibilité thermique du réseau de GaAs a été analysée dans tout l'intervalle de température allant de 100 à 800 K, dans le cadre du modÊle de conductibilité de phonons de Sharma-Dubey-Verma (SDV). Une trÊs bonne concordance a été observée entre les valeurs calculées et expérimentales de la conductibilité thermique du réseau dans l'intervalle de température étudié. L'exposant de températurem(T) a également été calculé dans ce domaine de température pour la vitesse de relaxation de la diffusion de trois phonons. Les pourcentages individuels des contributions des phonons transversaux et longitudinaux ont également été étudiés.

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100–800 CaAs -- . . m() CaAs. , .

     

Heat transfer in a lattice at low temperature

It is found that in the low temperature region the Callaway expression for the lattice thermal conductivity reduces to the expression obtained by Kazakov and Nagaev which is based on the nonlinear heat transfer theory.