Rotational structures in the 125Cs nucleus

The collective band structures of the ¹²⁵Cs nucleus have been investigated by in-beam γ-ray spectroscopic techniques following the ¹¹⁰Pd ( ¹⁹F, 4n) reaction at 75MeV. The previously known level scheme, with rotational bands built on πg_7/2, πg_9/2 and πh_11/2 orbitals, has been extended and evolves into bands involving rotationally aligned ν(h_11/2)² and π(h_11/2)² quasiparticles. A strongly coupled band has been reassigned a high-K πh_11/2 ⊗ νg_7/2 ⊗ νh_11/2 three-quasiparticle configuration and a new side band likely to be its chiral partner has been identified. Configurations assigned to various bands are discussed in the framework of Principal/Tilted Axis Cranking (PAC/TAC) model calculations.     

Proton and alpha evaporation spectra in low energy 12C and 16O induced reactions

Proton and alpha particle spectra have been measured in the ¹²C+⁹³Nb and ¹²C+⁵⁸Ni reactions at E(¹²C)=40 and 50 MeV and in the ¹⁶O + ⁹³Nb reaction at E(¹⁶O) =75 MeV. The spectra are compared with the statistical model calculations. The shapes of the calculated spectra are in agreement with experimental data except for the alpha spectrum in the ¹²C + ⁹³Nb reaction at 40 MeV. The observed evaporation bump is at ∼2 MeV lower energy compared to the calculated one. This discrepancy could imply alpha particle emission from a deformed configuration before compound nucleus formation at this near Coulomb barrier beam energy.     

Properties of<Emphasis Type="Italic">B</Emphasis><Subscript>c</Subscript> meson

The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -α_c/r +Ar ^νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB _cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental values at potential index,ν = 1     

Theoretical investigations on ZnCdO2 and ZnMgO2 alloys: A first principle study

We report on the calculations related to the electronic structure of ZnO, CdO, MgO, ZnMgO₂ and ZnCdO₂ in the wurtzite, rocksalt and chalcopyrite structures. From this study we found that ZnO and MgO are of direct band semiconductor, CdO is of semi metallic in nature. ZnMgO₂ and ZnCdO₂ are direct band semiconductors. From the energy considerations, we found that ZnMgO₂ and ZnCdO₂ are more stable in chalcopyrite structure rather than in rocksalt structure. Using the calculated band gap values, the bowing parameter for ZnMgO₂ and ZnCdO₂ is deduced and found to be in agreement with the reported value.     

Efficient and high-power intracavity frequency doubled diode-side-pumped Nd:YAG/KTP continuous wave (CW) green laser

Highly efficient continuous wave (CW) green beam generation by intracavity frequency doubling of a diode side-pumped Nd:YAG laser using a single pump head based on a copper-coated flow tube in a V-shaped cavity geometry has been demonstrated. A maximum 30.5 W of CW green power was obtained at a total diode pumping power of 260 W corresponding to 11.7% conversion efficiency of diode pump power to CW green power and 4.7% conversion efficiency of electrical power to CW green power. The performance of the laser by considering the pump power induced thermal lensing effect and the M²-parameter at the fundamental wavelength has been analyzed.     

Nitrogen diffusion in amorphous silicon nitride isotope multilayers probed by neutron reflectometry

Amorphous silicon nitride is a model system for a covalently bound amorphous solid with a low atomic mobility where reasonable values of self-diffusivities are still lacking. We used neutron reflectometry on isotope enriched Si3 14N4/Si3 15N4 multilayers to determine nitrogen self-diffusivities ranging from 10(-24) to 10(-21) m2/s between 950 and 1250 degrees C. Time dependent diffusivities observed at 1150 degrees C indicate the presence of structural relaxation. For long annealing times (relaxed state) the diffusivities follow an Arrhenius law with an activation enthalpy of (3.6 +/- 0.4) eV. The results are indicative of a direct diffusion mechanism without the involvement of thermal point defects.     

Evidence of Dynamical Fluctuation of Target Residues in Relativistic Nuclear Interaction at 14.5 AGeV

An analysis of data of target fragments of ²⁸Si-AgBr (at 14.5 AGeV) reveals the existence of emission asymmetry in the azimuthal plane, which is found to depend on the number of target fragments. The comparison with the data of ³²S-AgBr (at 200 AGeV) and ¹⁶O-AgBr (at 60 AGeV) interactions indicates that emission asymmetry depends on the projectile mass and energy.     

Structures and stability of Al<Subscript><Emphasis Type="Bold">7</Emphasis></Subscript>C and Al<Subscript><Emphasis Type="Bold">7</Emphasis></Subscript>N clusters

We report results of the atomic and electronic structures of Al₇C cluster using ab initio molecular dynamics with ultrasoft pseudopotentials and generalized gradient approximation. The lowest energy structure is found to be the one in which carbon atom occupies an interstitial position in Al₇ cluster. The electronic structure shows that the recent observation [Chem. Phys. Lett. 316, 31 (2000)] of magic behavior of Al₇C^- cluster is due to a large highest occupied and lowest unoccupied molecular orbital (HOMO-LUMO) gap which makes Al₇C^- chemically inert. These results have further led us to the finding of a new neutral magic cluster Al₇N which has the same number of valence electrons as in Al₇C^- and a large HOMO-LUMO gap of 1.99 eV. Further, calculations have been carried out on (Al₇N)₂ to study interaction between magic clusters. Received 28 July 2001     

Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study

The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS?, a 2D device simulator from Silvaco, have been used to assess the validity of the models.     

PHOTOACOUSTIC SPECTROSCOPIC STUDIES OF POLYCYCLIC AROMATIC HYDROCARBONS: NAPHTHALENE CATION

The photoacoustic (PA) spectrum of naphthalene cation in boric acid glass, in the region 250–400 nm is reported for the first tune and compared with its optical absorption spectrum. The energy levels for the ions are calculated using open shell Wasilewski method with limited configuration interaction and used to interpret the observed PA spectrum.