We present a scheme for bidirectional controlled teleportation by using a six-qubit cluster state as quantum channel. Based on the C-not operation and single qubit measurements, Alice may transmit an arbitrary single qubit state of qubit A to Bob and Bob may transmit an arbitrary single qubit state of qubit B to Alice via the control of the supervisor Charlie. 相似文献
A novel organic ligand, 6-parachloroaniline carbonyl 2-pyridine carboxylic acid, and the corresponding europium complex, tris(6-parachloroaniline carbonyl-2-pyridine carboxylate) europium (III) have been designed and synthesized. The results showed that the synthesized product was a conjugated complex, emitting remarkable strong red luminescence, and was a good red luminescence material with good thermal stability. The 5D0 lifetime of Eu3+ in the complex was examined using time-resolved spectroscopic analysis. The lifetime values for 1.0×10−5 mol/l ethanol solution of the complex and for the complex solid were 0.49±0.01 and 1.94±0.01 ms, respectively. 相似文献
High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG
laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence
(PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown
on Al2O3(0001) and SiO2/Si(100) were 3 and 18 meV, respectively.
Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001 相似文献
Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO3/(LaAlO3)0.29(Sr2AlTaO6)0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 109 cm–2, and the density of basal stacking faults is below 1 × 104 cm–1. The (11\bar 2 \bar 2) ZnO exhibits strong D0X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.
