激光系统组件化仿真软件EasyLaser

针对国内一直以来缺乏一套能够对复杂激光系统进行全面仿真模拟工具的问题,在成熟仿真模块的基础上,基于组件化建模仿真思想研发了通用易用的激光系统仿真软件EasyLaser。它由通用的组件化建模仿真支撑平台SciSimu和8个仿真组件库构成,具备对光束的光学元件间传输、大气传输、电视成像、自适应光学校正、识别提取跟踪等复杂过程的建模与仿真能力。详细介绍了EasyLaser的物理仿真能力和软件特色,并利用EasyLaser软件搭建仿真光路模型,进行自适应光学系统对大气湍流效应的校正效果的分析和研究。     

不同结构毛细管网辐射板供冷性能实验研究

对两种不同结构毛细管网辐射板的性能进行了实验研究,分析了在不同供水温度下,该两种辐射板在表面温度分布、供冷能力、安装辐射板房间温度变化情况之间的差异,为今后毛细管网辐射供冷空调系统辐射末端的设计应用及运行控制提供依据。     

Bidirectional Controlled Teleportation via Six-Qubit Cluster State

We present a scheme for bidirectional controlled teleportation by using a six-qubit cluster state as quantum channel. Based on the C-not operation and single qubit measurements, Alice may transmit an arbitrary single qubit state of qubit A to Bob and Bob may transmit an arbitrary single qubit state of qubit B to Alice via the control of the supervisor Charlie.     

磁性单层膜磁学性质的Monte Carlo模拟

采用类Ising模型,利用Monte Carlo方法研究了磁性单层膜中退磁性偶极作用和铁磁性交换作用对系统磁学性质的影响.结果显示,随着偶极相互作用的增加,系统在低温下的磁化出现平台现象,此时磁化曲线可分为2个阶段,在低外场下,温度升高,系统易磁化,在高外场下则反之.这种新奇的磁化行为导致系统的磁熵变在低温低外场下出现大于零的反常行为.在模拟过程中,对长程力作用采用了比较精确的处理方法.     

Eu,Dy共掺杂SrAl2O4长余辉材料制备新工艺

活化Al-Sr合金粉末水解制备SrAl₂O₄长余辉材料的前驱体,并采用高温固相反应法制备出Eu,Dy共掺杂的SrAl₂O₄长余辉材料,对其微观结构和发光特性进行了研究。实验结果表明:前驱体中Al、Sr元素在微观状态下分布均匀,所制成的长余辉发光材料的发射主峰位于520nm附近,为典型的Eu²⁺离子4f5d-4f的特征发射,初始亮度达到18cd/m²,余辉时间长达46h。     

Synthesis and luminescence of a novel conjugated europium complex with 6-parachloroaniline carbonyl 2-pyridine carboxylic acid

A novel organic ligand, 6-parachloroaniline carbonyl 2-pyridine carboxylic acid, and the corresponding europium complex, tris(6-parachloroaniline carbonyl-2-pyridine carboxylate) europium (III) have been designed and synthesized. The results showed that the synthesized product was a conjugated complex, emitting remarkable strong red luminescence, and was a good red luminescence material with good thermal stability. The ⁵D₀ lifetime of Eu³⁺ in the complex was examined using time-resolved spectroscopic analysis. The lifetime values for 1.0×10⁻⁵ mol/l ethanol solution of the complex and for the complex solid were 0.49±0.01 and 1.94±0.01 ms, respectively.     

激光二极管相对于铯饱和吸收D2线的无调制扰动三次谐波锁频

将频率调制加在声光调制器上 ,用三次谐波探测法获得了铯原子D2 线的三阶微分饱和光谱。采用这种激光器无调制扰动方案结合三次谐波锁频技术 ,实现了 85 2nm的分布布拉格反射器半导体激光器相对于 6S1/2 F =4- 6P3 /2 F′ =5超精细跃线的频率锁定。由锁定后的频率误差信号估算 ,10s内激光频率起伏小于± 35 0kHz ,相对频率稳定度约 1× 10 -9。这种无调制扰动方案可以消除一般的饱和吸收稳频方法中由于直接对激光器进行频率调制而带来的额外频率噪声 ;三次谐波锁频技术的应用 ,还可有效地降低铯原子饱和吸收谱中剩余多普勒背景的影响     

Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser

High-quality ZnO thin films were grown on single-crystalline Al₂O₃(0001) and amorphous SiO₂/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al₂O₃(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO₂/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al₂O₃(0001) and SiO₂/Si(100) were 3 and 18 meV, respectively. Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001     

苯基取代聚乙炔中的元激发

苯环取代聚乙炔是一类具有简并基态的发光聚合物.利用扩展的SuSchriefferHeeger模型,研究了这类聚合物链中的孤子、极化子等元激发特性.结果表明:由于苯环与聚乙炔主链间的强π电子耦合,苯环取代抑制了聚乙炔主链的二聚化,减小了导带与价带之间的能隙;因此取代聚乙炔中的元激发具有较小的激发能,同时具有更大的相干长度.尽管苯基取代对元激发有很大的影响,但是非取代聚乙炔中元激发的基本物理规律依然成立,表明这些元激发的基本特性不受取代基团的影响 关键词： 孤子 极化子 苯基取代聚乙炔     

Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO3‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO₃/(LaAlO₃)_0.29(Sr₂AlTaO₆)_0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 10⁹ cm^–2, and the density of basal stacking faults is below 1 × 10⁴ cm^–1. The (11\bar 2 \bar 2) ZnO exhibits strong D⁰X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.