LiInSe2 nanosecond optical parametric oscillator

Optical parametric oscillation using the new lithium selenoindate nonlinear crystal is reported for what is to our knowledge the first time. A 17 mm long, type II phase-matched sample is pumped by a 10 ns Nd:YAG laser. The minimum pump energy threshold is 3 mJ for a signal-resonant configuration. The signal and idler waves are tunable between 1.47 and 1.57 microm, and 3.3 and 3.78 microm, with a total output energy of 170 microJ corresponding to a 2.4% energy conversion at 8 mJ pump, only limited by the AR coatings damage. With optimized crystal quality and coatings, lithium selenoindate should show superior performance as compared with AgGaS(e)2 crystals, owing to its 4x larger thermal conductivity.     

Microscale simulation of martensitic microstructure evolution

A new model for the evolution of multivariant martensitic microstructure in single crystals and polycrystals is developed. In contrast with Landau-Ginzburg models, which are limited in practice to nanoscale specimens, this new scale-free model is valid for length scales greater than 100 nm and without an upper bound. It is based on a thermodynamic potential in the volume fractions of the martensitic variants that exhibits an instability resulting in microstructure formation. Simulated microstructures in elastic single crystals and polycrystals under uniaxial loading are in qualitative agreement with those observed experimentally.     

Two-level systems with relaxation

A method is presented for the coherent control of two-level systems when T2 relaxation is significant. The Bloch equations are rewritten as an equation of motion of the stereographic projection, Gamma, of the spin vector. This allows a Schur-type iteration used for the design of shaped pulses in magnetic resonance and coherent optics to be extended to include the effect of T2. In general, the effect of T2 on Gamma cannot be completely compensated for, although in practice it can be to a high degree. An example is presented of a driving field that produces a coherent superposition (no on-diagonal elements of the density matrix) over a chosen band of frequencies, in the presence of relaxation.     

Mapping of process-induced dopant redistributions by electron holography.

We present and review dopant mapping examples in semiconductor device structures by electron holography and outline their potential applications for experimental investigation of two-dimensional (2D) dopant diffusion on the nanometer scale. We address the technical challenges of the method when applied to transistor structures with respect to quantification of the results in terms of the 2D p-n junction potential and critically review experimental boundary conditions, accuracy, and potential pitfalls. By obtaining maps of the inner electrostatic potential before and after anneals typically used in device processing, we demonstrate how the "vertical" and "lateral" redistribution of boron during device fabrication can directly be revealed. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures.