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Mahmoud F. Farhat Mansour A. Makhlouf Ahmed M. El-Saghier Aysha B.A. Mezoughi Salma M. Awhida Amal A.M. El-mehdi 《Arabian Journal of Chemistry》2011,4(3):307-311
2-Ylidene and 2,5-diylidene-4-thiazolidinones 2a–d were synthesized and converted into pyrazole derivatives 4a–d by reaction with hydrazine hydrate. A mechanism of this novel conversion is suggested. 相似文献
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Ukrainian Mathematical Journal - We study Virasoro-type extensions of the q-deformed Witt Hom–Lie superalgebras. Moreover, we provide the cohomology of q-deformed Witt–Virasoro... 相似文献
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Let B⊆A be an H-Galois extension, where H is a Hopf algebra over a field K. If M is a Hopf bimodule then , the Hochschild homology of A with coefficients in M, is a right comodule over the coalgebra CH=H/[H,H]. Given an injective left CH-comodule V, our aim is to understand the relationship between and . The roots of this problem can be found in Lorenz (1994) [15], where and are shown to be isomorphic for any centrally G-Galois extension. To approach the above mentioned problem, in the case when A is a faithfully flat B-module and H satisfies some technical conditions, we construct a spectral sequence
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Martin Bordemann Abdenacer Makhlouf 《International Journal of Theoretical Physics》2008,47(2):311-332
We describe enveloping algebras of finite-dimensional Lie algebras which are formal in the sense that their Hochschild complex
as a differential graded Lie algebra is quasi-isomorphic to its Hochschild cohomology. For Abelian Lie algebras this is true
thanks to the Kontsevich formality theorem. We are using his formality map twisted by the group-like element generated by
the linear Poisson structure to simplify the problem, and then study examples. For instance, the universal enveloping algebras
of the Lie algebras
are formal. We also recover our rigidity results for enveloping algebras from this new angle and present some explicit deformations
of linear Poisson structure in low dimensions. 相似文献
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P. P. George A. Gedanken Shirly Ben-David Makhlouf I. Genish A. Marciano Riam Abu-Mukh 《Journal of nanoparticle research》2009,11(4):995-1003
TiN, NbN, and TaN nanocrystals have been selectively prepared through a simple, solvent-free, and convenient reaction under
autogenic pressure at moderate temperature (RAPET) process at 350 °C for 12 h, reacting transition metal chlorides and sodium
azide. The nanostructures obtained are characterized by powder X-ray diffraction (PXRD), transmission electron microscopy
(TEM), and scanning electron microscopy (SEM). A reaction mechanism is suggested based on the experimental results. These
rapid reactions produce nanocrystals of TiN, NbN, and TaN with average sizes of approximately 30, 28, and 27 nm, respectively
(as calculated from X-ray line broadening). An octahedral inorganic fullerene was detected among the various structures of
the TiN. 相似文献
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Amel Boulfoul Amar Makhlouf Nawal Mellahi 《Journal of Applied Analysis & Computation》2019,9(3):864-883
In this paper, we consider the limit cycles of a class of polynomial differential systems of the form $\dot{x}=-y, \hspace{0.2cm} \dot{y}=x-f(x)-g(x)y-h(x)y^{2}-l(x)y^{3},$ where $f(x)=\epsilon f_{1}(x)+\epsilon^{2}f_{2}(x),$ $g(x)=\epsilon g_{1}(x)+\epsilon^{2}g_{2}(x),$ $h(x)=\epsilon h_{1}(x)+\epsilon^{2}h_{2}(x)$ and $l(x)=\epsilon l_{1}(x)+\epsilon^{2}l_{2}(x)$ where $f_{k}(x),$ $g_{k}(x),$ $h_{k}(x)$ and $l_{k}(x)$ have degree $n_{1},$ $n_{2},$ $n_{3}$ and $n_{4},$ respectively for each $k=1,2,$ and $\varepsilon$ is a small parameter. We obtain the maximum number of limit cycles that bifurcate from the periodic orbits of the linear center $\dot{x}=-y,$ $\dot{y}=x$ using the averaging theory of first and second order. 相似文献
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Thermally-evaporated thin films of tetraphenylporphyrin, TPP, with thickness range from (175 to 735) nm had been prepared. Annealing temperatures ranging from (273–473) K do not influence the amorphous structure of these films. The influence of environmental conditions: film thickness, temperature and frequency on the electrical properties of TPP thin films had been reported. It was found that dc conductivity increases with increasing temperature and film thickness. The extrinsic conduction mechanism is operating in temperature range of (293–380) K with activation energy of 0.13 eV. The intrinsic one is in temperatures >380 K via phonon assisted hopping of small polaron with activation energy of 0.855 eV. The ac electrical conductivity and dielectric relaxation in the temperature range (293–473) K and in frequency range (0.1–100) kHz had been also studied. It had been shown that theoretical curves generated from correlated barrier hopping (CBH) model gives the best fitting with experimental results. Analysis of these results proved that conduction occurs at low temperatures (300–370) K by phonon assisted hopping between localized states and it is performed by single polaron hopping process at higher temperatures. The temperature and frequency dependence of both the real and imaginary parts of dielectric constant had been reported. 相似文献