首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   80篇
  免费   4篇
  国内免费   1篇
化学   28篇
力学   3篇
数学   39篇
物理学   15篇
  2021年   4篇
  2020年   4篇
  2019年   7篇
  2018年   3篇
  2017年   3篇
  2016年   3篇
  2015年   5篇
  2014年   3篇
  2013年   16篇
  2012年   2篇
  2011年   9篇
  2010年   3篇
  2009年   2篇
  2008年   4篇
  2007年   4篇
  2006年   1篇
  2005年   3篇
  2001年   1篇
  1999年   1篇
  1995年   2篇
  1993年   2篇
  1992年   1篇
  1991年   1篇
  1989年   1篇
排序方式: 共有85条查询结果,搜索用时 15 毫秒
51.
52.
2-Ylidene and 2,5-diylidene-4-thiazolidinones 2ad were synthesized and converted into pyrazole derivatives 4ad by reaction with hydrazine hydrate. A mechanism of this novel conversion is suggested.  相似文献   
53.
Ukrainian Mathematical Journal - We study Virasoro-type extensions of the q-deformed Witt Hom–Lie superalgebras. Moreover, we provide the cohomology of q-deformed Witt–Virasoro...  相似文献   
54.
Let BA be an H-Galois extension, where H is a Hopf algebra over a field K. If M is a Hopf bimodule then , the Hochschild homology of A with coefficients in M, is a right comodule over the coalgebra CH=H/[H,H]. Given an injective left CH-comodule V, our aim is to understand the relationship between and . The roots of this problem can be found in Lorenz (1994) [15], where and are shown to be isomorphic for any centrally G-Galois extension. To approach the above mentioned problem, in the case when A is a faithfully flat B-module and H satisfies some technical conditions, we construct a spectral sequence
  相似文献   
55.
We describe enveloping algebras of finite-dimensional Lie algebras which are formal in the sense that their Hochschild complex as a differential graded Lie algebra is quasi-isomorphic to its Hochschild cohomology. For Abelian Lie algebras this is true thanks to the Kontsevich formality theorem. We are using his formality map twisted by the group-like element generated by the linear Poisson structure to simplify the problem, and then study examples. For instance, the universal enveloping algebras of the Lie algebras are formal. We also recover our rigidity results for enveloping algebras from this new angle and present some explicit deformations of linear Poisson structure in low dimensions.  相似文献   
56.
A colloidal route to aqueous alumina gels is described, allowing the long-term viability of encapsulated bacteria.  相似文献   
57.
TiN, NbN, and TaN nanocrystals have been selectively prepared through a simple, solvent-free, and convenient reaction under autogenic pressure at moderate temperature (RAPET) process at 350 °C for 12 h, reacting transition metal chlorides and sodium azide. The nanostructures obtained are characterized by powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). A reaction mechanism is suggested based on the experimental results. These rapid reactions produce nanocrystals of TiN, NbN, and TaN with average sizes of approximately 30, 28, and 27 nm, respectively (as calculated from X-ray line broadening). An octahedral inorganic fullerene was detected among the various structures of the TiN.  相似文献   
58.
In this paper, we consider the limit cycles of a class of polynomial differential systems of the form $\dot{x}=-y, \hspace{0.2cm} \dot{y}=x-f(x)-g(x)y-h(x)y^{2}-l(x)y^{3},$ where $f(x)=\epsilon f_{1}(x)+\epsilon^{2}f_{2}(x),$ $g(x)=\epsilon g_{1}(x)+\epsilon^{2}g_{2}(x),$ $h(x)=\epsilon h_{1}(x)+\epsilon^{2}h_{2}(x)$ and $l(x)=\epsilon l_{1}(x)+\epsilon^{2}l_{2}(x)$ where $f_{k}(x),$ $g_{k}(x),$ $h_{k}(x)$ and $l_{k}(x)$ have degree $n_{1},$ $n_{2},$ $n_{3}$ and $n_{4},$ respectively for each $k=1,2,$ and $\varepsilon$ is a small parameter. We obtain the maximum number of limit cycles that bifurcate from the periodic orbits of the linear center $\dot{x}=-y,$ $\dot{y}=x$ using the averaging theory of first and second order.  相似文献   
59.
60.
Thermally-evaporated thin films of tetraphenylporphyrin, TPP, with thickness range from (175 to 735) nm had been prepared. Annealing temperatures ranging from (273–473) K do not influence the amorphous structure of these films. The influence of environmental conditions: film thickness, temperature and frequency on the electrical properties of TPP thin films had been reported. It was found that dc conductivity increases with increasing temperature and film thickness. The extrinsic conduction mechanism is operating in temperature range of (293–380) K with activation energy of 0.13 eV. The intrinsic one is in temperatures >380 K via phonon assisted hopping of small polaron with activation energy of 0.855 eV. The ac electrical conductivity and dielectric relaxation in the temperature range (293–473) K and in frequency range (0.1–100) kHz had been also studied. It had been shown that theoretical curves generated from correlated barrier hopping (CBH) model gives the best fitting with experimental results. Analysis of these results proved that conduction occurs at low temperatures (300–370) K by phonon assisted hopping between localized states and it is performed by single polaron hopping process at higher temperatures. The temperature and frequency dependence of both the real and imaginary parts of dielectric constant had been reported.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号