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41.
The spin-spin proton relaxation times T2 of concentrated sucrose, maltose,D-glucose andL-proline solutions were determined using a Bruker Minispec NMR Spectrometer. Log spin echo amplitude decay curves were also determined and their non-linear nature allowed the proportions of different proton types to be calculated. These were in agreement with the theoretical proportions of ring (non-exchangeable protons), solute hydroxyl protons and water protons in the simple sugar molecules. A deuteration experiment confirmed that only non-exchangeable ring protons remained.  相似文献   
42.
The influence of high temperature buffer layers on the structural characteristics of GaN grown by hydride vapour phase epitaxy on sapphire was investigated. Strain relaxation as well as mismatch-induced defect reduction in thick GaN layers grown on AlN buffer was microscopically identified using cathodoluminescence and micro-Raman spectroscopy in cross-section of the films. The results were correlated with photoluminescence and Hall-effect data of layers with different thicknesses. These relaxation processes were suggested to account for the specific defect distribution in the buffers revealed by high-resolution X-ray diffraction and transmission electron microscopy.  相似文献   
43.
Ab‐initio calculations have been used to investigate the phase stability and magnetic state of Crn+ 1GaCn MAX phase. Cr2GaC (n = 1) was predicted to be stable, with a ground state corresponding to an antiferromagnetic spin configuration. Thin‐film synthesis by magnetron sputtering from elemental targets, including liquid Ga, shows the formation of Cr2GaC, previously only attained from bulk synthesis methods. The films were deposited at 650 °C on MgO(111) substrates. X‐ray diffraction and high‐resolution transmission electron microscopy show epitaxial growth of (000?) MAX phase. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
44.
The heat capacity and the thermal expansion coefficient have been measured at low temperatures for vitreous silica containing 0, 10, 20, 30 and 40% soda. The heat capacity per gram is not much affected at 4 K, but is reduced by up to 30% at 10 K by addition of soda. The effect on the expansion coefficient is much greater; the negative values shown by pure silica below 150 K largely disappear with the addition of {10% soda. Below 10 K the coefficient remains negative until 25% soda is added. The Grüneisen function γ(T) is calculated for the various compositions.  相似文献   
45.
The Difference of Gaussian (DOG) filter is widely used in optics and image processing as, among other things, an edge detection and correlation filter. It has important biological applications and appears to be part of the mammalian vision system. In this paper we analyse the filter and provide details of the full width half maximum, bandwidth and frequency response in order to aid the full characterisation of its performance.  相似文献   
46.
杜嬛  徐升华  孙祉伟  阿燕 《物理化学学报》2010,26(10):2807-2812
胶体粒子聚集速率常数实验值远低于理论值一直是被普遍关注的问题.聚集速率常数的理论推导是基于粒子的几何半径来考虑的,但决定粒子扩散速率及聚集速率的应该是粒子的流体力学半径(大于几何半径),因而它是使聚集速率常数实验值低于理论值的因素之一.影响流体力学半径的因素很多,其中,带电粒子在溶液中因表面存在双电层,会明显增大流体力学半径,造成聚集速率减慢.而双电层的厚度又随溶液中离子强度的不同而改变.本工作在聚集速率的公式中引入了修正因子,即几何半径与其流体力学半径之比,以修正由于用几何半径代替流体力学半径带来的误差.其中几何半径和流体力学半径可以分别用扫描电镜(SEM)和动态光散射(DLS)来测定.以两种粒径的聚苯乙烯带电微球为例,考察了在不同离子强度下,该误差的大小.结果发现,对于半径为30 nm的微球,用流体力学半径计算的慢聚集速率常数比理论值偏低约8%.该误差随离子强度增加而减少.对于快聚集情况,流体力学半径对聚集速率基本没有影响.  相似文献   
47.
We report the development of a new microstereophotolithography technique for creation of three-dimensional microcomponents by use of a planar, layer-by-layer process of exposure, in which a spatial light modulator is used as a dynamic lithographic mask. The system operates in the UV to take advantage of the wide supply of commercially available photopolymers designed for conventional stereolithography. With this novel procedure it is possible to build components with feature sizes as small as a few micrometers. The experimental setup is briefly described, and the first microcomponent fabricated by this system is shown.  相似文献   
48.
49.
Molecular interactions between DNA and an aminated glass substrate   总被引:1,自引:0,他引:1  
With the development of DNA arrays, the immobilization of DNA strands onto solid substrates remains an essential research topic. DNA arrays have potential applications in DNA sequencing, mutation detection, and pathogen identification. DNA bound to solid substrates must still be accessible and retain the ability to hybridize with its complementary strands. One technology to produce these arrays involves linking DNA molecule probes to a silanized substrate in microspot patterns and exposing them to a solution of fluorescently labeled samples of DNA targets. The behavior of both the target and probe DNA and their interactions with each other at the substrate surface, particularly with respect to molecular interactions, are poorly understood at the present time. The objective of this work is to model simply the interface interactions between DNA and glass slides modified with an aminosilane (gamma-aminopropyltriethoxysilane, APTS). In aqueous solutions, DNA behaves as a polyacid over a wide range of pH. A glass substrate treated with APTS is positively or negatively charged, depending on the pH. A model of the surface charge of APTS-treated glass has been developed from results of wetting experiments performed at various pH. It has been demonstrated that the surface charge of APTS-treated glass is well described by a model of constant capacitance of the electrical double layer. A good correlation between experimental data on DNA retention at various pH's and the variation of the surface charge of the APTS-treated glass is obtained. This provides an indication of the role of ionic interactions in the adsorption of DNA molecules onto aminated glass slides.  相似文献   
50.
The action of concentrated sulphuric acid on (1, R = H or CO2Me, R′ = H) generates the cation (2, R = H or CO2Me, R′ = H); the stereoisomer (5, R = H, R′ = H) is unaffected. This is an alternative procedure of some utility for the preparation of some cation salts, notably of (2, R = CO2Me, R′ = H).  相似文献   
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