Simulating resonance-mediated two-photon absorption enhancement in rare-earth ions by a rectangle phase modulation

Improving the up-conversion luminescence efficiency of rare-earth ions via the multi-photon absorption process is crucial in several related application areas. In this work, we theoretically propose a feasible scheme to enhance the resonance-mediated two-photon absorption in Er~(3+) ions by shaping the femtosecond laser field with a rectangle phase modulation. Our theoretical results show that the resonance-mediated two-photon absorption can be decomposed into the on-resonant and near-resonant parts, and the on-resonant part mainly comes from the contribution of laser central frequency components, while the near-resonant part mainly results from the excitation of low and high laser frequency components.So, the rectangle phase modulation can induce a constructive interference between the two parts by properly designing the modulation depth and width, and finally realizes the resonance-mediated two-photon absorption enhancement. Moreover, our results also show that the enhancement efficiency of resonance-mediated two-photon absorption depends on the laser pulse width(or laser spectral bandwidth), final state transition frequency, and intermediate and final state absorption bandwidths. The enhancement efficiency modulation can be attributed to the relative weight manipulation of on-resonant and near-resonant two-photon absorption in the whole excitation process. This study presents a clear physical insight for the quantum control of resonance-mediated two-photon absorption in the rare-earth ions, and there will be an important significance for improving the up-conversion luminescence efficiency of rare-earthions.     

Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

Three-dimensional (3D) TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor (NMOS) transistor or P-channel metal-oxide semiconductor (PMOS) transistor can mitigate the cross section of single event upset (SEU) in 14-nm complementary metal-oxide semiconductor (CMOS) bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Unlike dual-interlock cell (DICE) design, this approach is more effective under heavy ion irradiation of higher LET, in the presence of enough taps to ensure the rapid recovery of well potential. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.     

电子离子碰撞过程中的共振激发双自电离

利用相对论修正扭曲波玻恩近似, 计算了类钠离子Ti11+ 和Cr13+ 的电子碰撞直接电离, 激发自电离和共振激发双自电离截面. 理论数据与实验结果在整个能区内很好符合. 共振激发双自电离截面对总截面的贡献约为20%-30%, 对速率系数的影响较大, 不可忽略.     

无绝缘高温超导双饼线圈的瞬态电热特性分析

无绝缘高温超导线圈具有良好的电热稳定性和机械紧凑性,但其充电过程中却有明显的磁场延迟现象。为详细了解无绝缘高温超导线圈励磁过程的瞬态特性,建立了无绝缘高温超导线圈的同轴圆环等效电路模型。通过绕制一个670匝的无绝缘高温超导双饼线圈,在液氮温度下进行不同充电速率的励磁实验,初步验证了等效电路模型的正确性。基于该模型,针对线圈励磁过程的充电和恒流阶段,仿真得到了线圈各匝的径向电流分布规律和电热损耗特性。     

Szász型算子线性组合的同时逼近

本文利用ω^2r_φλ(f,t)代替ω^r_φλ(f,t)给出了Szász-Kantorovich算子线性组合同时逼近的估计。     

等离子体理论——具有内部输运垒的托卡马克平衡位形关于高n理想磁流体气球模的稳定性

内部输运垒是一种与托卡马克等离子体的改善约束态相联系的现象。在内部输运垒所在区域，等离子体的压强梯度非常大而磁剪切极小，因此，接近内部输运垒的区域，剪切的绝对值很小。与这一现象相关的物理内容非常丰富，如磁流体稳定性问题，以及微观不稳定性（人们认为它们是产生反常输运的原因）的抑制问题等。关于小剪切条件下稳定性的处理方法本身也是一个难题.最近，Connor和Hastie（下面简称CH模型）重新研究了具有内部输运垒的等离子体的高n（环向模数）理想磁流体气球模的稳定性，     

基于超声相控阵和逆时偏移成像的套筒灌浆饱满度无损检测方法

灌浆套筒连接是装配式建筑应用主要的连接方式之一,套筒的灌浆饱满度决定了装配式建筑的稳定性和抗震性。本文提出一种基于逆时偏移(RTM)成像算法的相控阵超声检测方法,可对装配式套筒连接处可能存在的灌浆缺陷进行检测,本文通过数值仿真试验和室内模型试验对所提方法的有效性进行了验证,其中数值仿真结果表明：RTM算法与传统超声全聚焦(TFM)算法相比,具有更高的成像精度和清晰度,能准确识别套筒内部的空洞、不密实等灌浆缺陷。室内试验结果表明：在RTM重构图像中,与灌浆密实套筒相比,灌浆不密实套筒的反射信号会低9dB,此特征可以识别注浆缺陷。研究结果表明本文提出的相控阵超声成像方法适用于预制结构的套筒灌浆缺陷检测。     

例析曲线过定点问题

曲线（包括函数的图象）过定点问题是研究曲线性质的重要组成部分．它也是高中数学中一类重要的题型，通过对这类问题的研究，有助于加深对曲线性质的理解和应用．下面介绍一下解决这类问题的常用解题策略．     

十二参三角形板元

九参三角形板元的研究工作已有不少,但十二参三角形板元还较少见报道。唐立民等利用他们创立的拟协调方法构造一个十二参三角形拟协调元,节点参数是单元三个顶点上的函数值和两个一阶偏导数值及三边中点上的外法向导数值,他们是用力学方法构