铁氧体磁芯感应加速腔模型

 针对铁氧体磁芯,建立了以多层有损传输线为基础的同轴感应加速腔物理模型,并在短脉冲励磁条件下,通过低压及高压实验,结合PSpice电路模拟,对模型的准确性进行了验证,并由此间接推算出了铁氧体磁芯在不同情况下的平均脉冲磁导率和介电常数。实验和模拟结果显示,该模型能够准确地反映铁氧体磁芯感应腔在脉冲励磁下的动态物理过程,为感应加速腔实验结果分析、结构优化设计及磁芯性能选取提供了准确有效的方法。     

Observation of 550 MHz passively harmonic mode-locked pulses at L-band in an Er-doped fiber laser using carbon nanotubes film

We demonstrate a passively harmonic mode-locked(PHML) fiber laser operating at the L-band using carbon nanotubes polyvinyl alcohol(CNTs-PVA) film. Under suitable pump power and an appropriate setting of the polarization controller(PC), the 54~(th) harmonic pulses at the L-band are generated with the side mode suppression ratio(SMSR) better than 44 dB and a repetition frequency of 503.37 MHz. Further increasing the pump power leads to a higher frequency of 550 MHz with compromised stability of 38.5 dB SMSR. To the best of our knowledge, this is the first demonstration on the generation of L-band PHML pulses from an Er-doped fiber laser based on CNTs.     

用四叉事例样本确定J/ψ总数

详细介绍了用J/ψ衰变中的四叉事例样本确定J/ψ总数的方法,并用此方法确定了北京谱仪从1999年11月到2001年5月所收集的两批J/ψ数据的事例总数,分别为(27.00±1.48)×10⁶和(30.70±1.62)×10⁶.     

External cavity diode laser around 657 nm

Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method to tune the laser frequency to a range far from its free running frequency. For the Ca atomic Ramsey spectroscopy experiment, we have constructed a 657-nm laser system based on the Littman-Metcalf configuration with a 660-nm commercial laser diode. Continuously 10-GHz tuning range was achieved with about 100-kHz spectral linewidth, measured with beat-note spectrum of two identical laser systems.     

利用可调谐半导体激光光谱技术对含尘气体中NH3的测量

利用可调谐半导体激光吸收光谱技术(TDLAS)并结合波长调制,在近红外波段1531.7nm处对常温常压下的NH3进行浓度测量.在10 m的长程吸收池内得到了25×10-6的浓度信号,并且在25×10-5-400×10-6浓度范围内二次谐波信号与浓度具有良好的线性关系.讨论了粉尘颗粒对于二次谐波信号的干扰,并提出了利用激光强度线性拟合解决颗粒对气体测量干扰的方法.     

46.8MeV的 ~(12)C非弹性散射

在Glauber多重散射理论框架下,使用跃迁密度方法和三种N-N湮没势,计算了46·8MeV的反质子在~(12)C上的非弹性散射微分截面.理论曲线与实验数据符合得较好.     

Li_2O-Al_2O_3-SiO_2-P_2O_5系统微晶玻璃受控析晶分析

应用DTA,XRD,SEM等手段研究了Li2O_Al2O3_SiO2_P2O5系统微晶玻璃的析晶过程和相组成。采用模拟计算方法考察了不同的析晶条件。引入适量的Al2O3等难熔物组分来改变析晶条件及残留玻璃相的组成和粘度。通过抑制主晶相(Li2O.2SiO2)晶粒的生长,最终获得了晶粒尺寸为0.1~0.3μm的透明微晶玻璃。     

温度对PIN二极管限幅器功率响应特性的影响

 通过求解PIN二极管基区双极载流子扩散方程得到了限幅器Pspice等效电路模型, 根据PIN二极管物理参数与温度的关系, 数值计算得到了PIN二极管限幅器在多个温度点的功率响应特性, 发现温度的升高会使限幅器内部损耗增加, 加剧限幅器内部热损伤。并利用恒温控制系统进行了实验验证, 实验结果与数值计算结果相符合。实验还发现高温热冲击可能使限幅器限幅能力大幅下降, 可能成为通信系统的重大安全隐患。     

Single-Photon Emission from a Single InAs Quantum Dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.     

GaSb/AlSb/GaAs应变层结构的分子束外延生长

本文以反射式高能电子衍射(RHEED)和其强度振荡为监测手段,在半绝缘GaAs衬底上成功地生长GaSb/AlSb/GaAs应变层结构,RHEED图样表明,GaSb正常生长时为Sb稳定的C(2×6)结构,AlSb为稳定的(1×3)结构,作者观察并记录GaSb,AlSb生长时的RHEED强度振荡,并利用它成功地生长10个周期的GaSb/AlSb超晶格,透射电子显微镜照片显示界面平整、清晰,采用较厚的AlSb过渡层及适当的生长条件,可在半绝缘GaAs衬底上生长出质量好的GaSb外延层,其X射线双晶衍射半峰宽小于 关键词：