Effect of oxygen on regulation of properties of moderately boron-doped diamond films

Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B₃O and B₄O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.     

Influencing factors of microscanning performance based on flat optical component

To decrease the performance difference between the actual microscanning thermal imager and the theoretical value, a germanium lens (placed at a certain angle between the infrared focal plane array and infrared lens) dip angle model of flat optical component microscanning is introduced in this letter. The model is the basis for choosing the dip angle of the germanium lens, which is used in the microscanning thermal imager. In addition, the actual dip angle of the germanium lens is chosen according to the model, the infrared lens parameters of the thermal imager, and the germanium lens parameters of manufacture and installation. Only in this manner can the optimal performance of the microscanning thermal imager based on the flat optical component be obtained. Results of the experiments confirm the accuracy of the conclusions above.     

Minimum mean square error method for stripe nonuniformity correction

Stripe nonuniformity is very typical in line infrared focal plane (IRFPA) and uncooled starring IRFPA. We develop the minimum mean square error (MMSE) method for stripe nonuniformity correction (NUC). The goal of the MMSE method is to determine the optimal NUC parameters for making the corrected image the closest to the ideal image. Moreover, this method can be achieved in one frame, making it more competitive than other scene-based NUC algorithms. We also demonstrate the calibration results of our algorithm using real and virtual infrared image sequences. The experiments verify the positive effect of our algorithm.     

BEPCII直线加速器相控系统设计研究

为了补偿由于各种因素引起的微波相位漂移,BEPCII直线加速器需要建立微波相位反馈控制系统.能量最大法将用来确定每台功率源的最佳相位.沿直线加速器速调管长廊铺设相位稳定同轴线提供相位参考.现在已经完成了关键部件,如PAD单元、IfA 单元的开发.搭建了相控最小系统对系统进行了验证.     

超高压高精度激光状态方程实验测量

材料高压下的状态方程（EOS）在天体物理、材料科学和惯性约束聚变（ICF）等研究领域中都是十分重要的。2004年在“神光”-Ⅱ装置上进行了单路倍频激光直接驱动的Al-Cu阻抗匹配靶实验和Cu-Al阻抗反匹配实验，目的是提高冲击波速度的测量精度和准确性，同时校验测量方法的实用性和可靠性。     

受迫振动演示实验装置

本文叙述用示波器显示来演示受迫振动的实验装置，可直观地向学生展示受迫振动的幅频特性和相频特性。     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

大学物理课程跨学科教学研究与实践

大学物理是理工科专业开设的一门公共必修基础课程，涉及的学科专业广，人数众多，且后续对接的课程面宽，在公共必修课中具有重要的地位．大学物理目前在我校面向电子信息工程、通讯工程、电子科学与技术、生物科学、生物技术、生物工程、环境工程、化学生物学、化学、应用化学、材料化学、化学工程与工艺、高分子材料与工程、数学、应用数学、信息与计算科学、计算机科学与技术、教育技术学、心理学等20个专业的5000多名学生开设．     

基于SIFT匹配的全局运动估计方法

提出了一种基于SIFT(Scale invariant feature transform)匹配的全局运动估计算法.在SIFT初匹配的基础上,对每一个原始匹配特征点,利用所在尺度的邻域灰度信息,对其加权平均后再进行匹配,进而去除误配点.精炼后的匹配点集合作为求解全局运动参数模型的对应数据,采用最小二乘法计算模型参数.在...     

纵波模拟演示装置

介绍了一种纵波模拟演示装置，并给出了其结构要点及演示效果，实现了对纵波行波的演示。