高温超导薄膜微波非线性研究的进展

文章介绍了高温超导薄膜微波非线性的主要特征，阐述了高温超导薄膜微波非线性产生的原因和相关的研究现状，指出了高温超导薄膜非线性研究中遇到的困难和尚未解决的问题．     

类氖锗X光激光双程放大实验研究

本文在神光装置上,进行了类氖锗X光激光双程放大实验研究.实验中使用了硅/钼多层膜X光平面反射镜.用平场光栅谱仪测量了X光激光的时间积分和时间分辨信号.实验证实了X光激光的双程放大.时间积分结果表明,双程放大为单程放大信号的5倍多;时间分辨结果表明,对多层镜的作用时间作修正后,双程放大信号的增强倍数还要大.在本实验条件下,多层镜的寿命约为400—700ps.     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

最大似然方法和Bayes方法在结构方程模型分析中的讨论(英文)

本文通过模拟研究,讨论了最大似然方法和Bayes方法在分析结构方程模型中的相似点和不同之处。     

Time-Resolved Investigation of Ionization of Clusters Irradiated by a Strong Laser

Ionization dynamics of clusters irradiated by chirped femtosecond lasers is investigated by using a linearly chirped pulse spectral interferometry with a time resolution of less than lOOfs. The production of an average charged-Xe^18 and -Kr^9 ions indicates a strong energy coupling between laser and cluster. Ultrafast depletion of the probing laser is observed to be strictly coincident with the ionization front as seen in other experiments. Moreover,a two-step ionization process for Xe and Kr clusters irradiated by high-intensity lasers has been observed, which implies the role of resonance enhancement during the cluster explosion.     

Effects of Dual-Electrode Biasing on Er in a Toroidal Plasma

Two externally biased electrodes were inserted into the plasma on the KT-5C tokamak to test the effects on modifying the radial electric field Er, other than single biasing. Using various combinations of biasing voltage,the influences of double biasing are compared with the single biasing. It turns out that the effect of dual-biasing is also effective as a single one, but the outer electrode seems to be shielded by the inner one and show less influence. The results clearly show that the radial electric field Er changed by external biasing is intrinsically an effect localized at the edge of the plasma, which is caused by the electrode induced radial current; and dualelectrode biasing using the method similar to the single biasing seems not to be able to increase more distinctly the peaking effect on Er than the single biasing.     

Interaction of intense laser pulses with atomic clusters at different gas densities

The interaction of intense femtosecond laser pulses with rare gas clusters was studied experimentally, the time-of-flight spectra of ions from exploding clusters at different gas densities have been measured. It is found that while the relative components of ions in low and high energy of the ion energy spectrum decrease with the increase of the gas density, the average ion energies are the same for different gas densities, which indicates that the effect of gas density on laser-cluster interaction is not important under our experimental conditions.     

劳动力供给带弹性的Solow模型

本文给出了在劳动力供给带弹性条件下的Ｓｏ１ｏｗ增长模型，给出了经济增长的黄金律和均衡处资本稳定性的证明，并且与不带弹性的Ｓｏｌｏｗ模型作了比较．     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.