纤维编织管增强型中空纤维膜研究

采用二维编织技术将聚丙烯腈(PAN)长丝编织成中空纤维编织管作为增强体,分别以聚丙烯腈(PAN)和聚偏氟乙烯(PVDF)为成膜聚合物,N,N-二甲基乙酰胺(DMAc)为溶剂,聚乙烯吡咯烷酮(PVP)为添加剂,调制铸膜液,采用同心圆挤出-涂覆法制备了PAN纤维编织管同质增强型PAN中空纤维膜和异质增强型PVDF中空纤维膜.研究表明,所得PAN纤维编织管增强型中空纤维膜断裂强度最大可超过75 MPa,在伸长率10%范围内,表面分离层与增强体之间界面结合良好;表面分离层具有类似于非对称膜的结构,铸膜液可浸入纤维编织管纤维空隙中,铸膜液浸入部分固化后未影响膜的通透性能;随成膜聚合物浓度增加,膜纯水通量减小,牛血清白蛋白(BSA)截留率增大;随添加剂PVP浓度增加,膜的纯水通量先增大后减小,在8 wt%左右达最大值,BSA截留率随PVP浓度增加而单调增加;同质增强型中空纤维膜界面结合程度优于异质增强型.     

随机截尾的Warner与Simmons模型

本文在随机截尾模型的基础上,为了提高回答者的合作程度,提出了两种改进的调查敏感性问题数量特征的随机化回答方法。     

"探究液体压强与哪些因素有关"教学设计

全日制义务教育《物理课程标准》主题二“运动和相互作用”中，对液体压强知识提出的教学要求是：“通过实验探究，学习压强的概念；能用压强公式进行简单计算；知道增大和减小压强的方法．”与过去的教学大纲相比，新课标降低了对知识层次的要求，强调学生通过实验探究学习压强的概念，对压强的概念没有终结性的要求．另外，新课标还强调了压强公式的应用和在实际问题中知道增大和减小压强的方法．这一要求上的变化，体现了要鼓励学生积极投入到探究知识、联系丰富多彩的生活和生产活动中去的教育理念．     

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley-Read-Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous "S-shape" tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.     

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G).     

In_(0.53)Ga_(0.47)As/InP雪崩光电二极管响应及电学特性

通过分子束外延生长和开管式Zn扩散方法,制备了低暗电流、宽响应范围的In_(0.53)Ga_(0.47)As/InP雪崩光电二极管.在0.95倍雪崩击穿电压下,器件暗电流小于10nA;-5V偏压下电容密度低至1.43×10~(-8) F/cm~2.在1 310nm红外光照及30V反向偏置电压下,雪崩光电二极管器件的响应范围为50nW~20mW,响应度达到1.13A/W.得到了电荷层掺杂浓度、倍增区厚度结构参数与击穿电压和贯穿电压的关系:随着电荷层电荷密度的增加,器件贯穿电压线性增加,而击穿电压线性降低;电荷层电荷面密度为4.8×10~(12)cm~(-2)时,随着倍增层厚度的增加,贯穿电压线性增加,击穿电压增加.通过对器件结构优化,雪崩光电二极管探测器实现25V的贯穿电压和57V的击穿电压,且具有低暗电流和宽响应范围等特性.     

基于量子隐形传态的完全Bell基测量

完全区分4个Bell态是实现量子隐形传态过程的关键,目前线形光学的办法还不能对Bell态进行完全的测量.我们根据两光子量子隐形传态方案利用Mach-Zehnder干涉仪,通过高位希尔伯特空间中偏振与路径之间的纠缠实现了完全bell基测量.通过引入参考光的方法,达到干涉仪两臂相位的自动稳定;该方案成功应用于16 km自由空间量子隐形传态实验中.     

High resolution X-ray spherically bent crystal spectrometer for laser-produced plasma diagnostics

A new high spectral resolution crystal spectrometer is designed to measure very low emissive X-ray spectra of laser-produced plasma in 0.5-0.9 nm range. A large open aperture （30 ×20 （mm）） mica （002） spherically bent crystal with curvature radius R = 380 mm is used as dispersive and focusing element. The imaging plate is employed to obtain high spectral resolution with effective area of 30 × 80 （mm）. The long designed path of the X-ray spectrometer beam is 980 mm from the source to the detector via the crystal. Experiment is carried out at a 20-J laser facility. X-ray spectra in an absolute intensity scale is obtained from Al laserproduced plasmas created by laser energy of 6.78 J. Samples of spectra obtained with spectral resolution of up to E/△E - 1500 are presented. The results clearly show that the device is good to diagnose laser high-density plasmas.     

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N⁺-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N⁺-GaAs layer, up to 2×10¹⁹ cm^-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.     

Studies of the aperture design and its pointing precision in fast neutron penumbral imaging

Neutron penumbral imaging technique is an important diagnosis method in Inertial Confined Fusion, and the design of the aperture shape will affect the resolution of the imaging system. In this paper, several designs of the aperture shape are discussed. Moreover, the pointing precision is also discussed, and a rational pointing precision is given.