Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.     

Improvement of laser damage thresholds of fused silica by ultrasonic-assisted hydrofluoric acid etching

Polished fused silica samples were etched for different durations by using hydrofluoric(HF) acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared(IR) spectrometer, respectively. The laser induced damage thresholds(LIDTs) of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.     

低能质子辐照活体细胞的能量沉积特性

为了研究带电粒子与活体细胞的相互作用,利用能量为2,2.5,3 MeV的质子外束,在室温环境下对厚约50 nm的氮化硅支持膜上的毕赤酵母菌进行辐照,并用金硅面垒探测器测量其透射能谱,通过对能量沉积特性的分析,表明质子外束穿过毕赤酵母菌后能损随入射能的增大而减小,但能量歧离随入射能的增大而增大。To study the interaction of charged particles with biological living cells,we delivered 2,2.5 and 3 MeV protons outside vacuum as external beam at room temperature to irradiate yeast Pichia cells which are supported by 50 nm thick silicon nitride film and the transmission energy spectrum were measured by an Au-Si surface barrier detector to analyze energy deposition properties.The results demonstrate that the energy loss decreases with the incident protons energy increase,but the energy straggling increases with incident protons energy increase.     

熔盐法制备高性能铌酸钾钠无铅压电陶瓷

用熔盐法合成铌酸钾钠(Na0.52K0.48NbO3,N52K48N)陶瓷粉体,用传统固相烧结工艺制备N52K48N陶瓷.研究了熔盐含量和烧结温度对N52K48N陶瓷粉体及其所制备陶瓷的相结构、微观形貌及电学性能的影响.结果发现,熔盐法在750℃就合成了单一钙钛矿结构的N52K48N陶瓷粉体;随熔盐含量增加,N52K48N陶瓷粉体粒径增大,粉体团聚现象明显减弱.当熔盐与反应物质量之比为1∶5,烧结温度T=1050℃时,所制备的N52K48N陶瓷具有优异的电学性能:压电常数d33=137 pC/N,机电耦合系数kp=32.6;,居里温度Tc=410℃,表明熔盐法是一种很有前途的铌酸钾钠陶瓷制备方法.     

混凝土中钢筋脱钝的临界氯离子浓度研究

通过不同氯盐钢筋混凝土加速腐蚀试验, 结合、腐蚀面积率和失重率混凝土保护层厚度、水灰比对混凝土中钢筋脱钝的临界氯离子浓度的影响. 结果表明: 为0.5时保护层厚度为15mm钢筋对应氯离子浓度为0.1保护层厚度25mm的则为0.2水灰比0.3时, 保护层厚度15mm钢筋对应氯离子浓度为0.5保护层厚度25mm的则为0.6表面自带灰黑色能有效延缓钢筋锈蚀当同时处于0.5水灰比, 15mm保护层厚度未去氧化皮的钢筋对应氯离子浓度为0.4%.     

含三维复杂工程细缝金属腔的电磁屏蔽效能评估

复杂工程细缝为金属腔电磁屏蔽效能的评估带来了挑战。采用时域有限差分(FDTD)法结合环路(CP)法,在不改变原有粗网格剖分的基础上,实现了对三维复杂细缝结构金属腔电磁屏蔽效能的快速计算。提出复杂工程细缝的等效模型,提高了复杂细缝结构的CP编程和计算效率,计算结果与采用精细网格剖分的传统FDTD(fine-FDTD)计算结果吻合很好,验证了等效模型的有效性。在此基础上,分析了两种开有典型工程细缝金属腔在0~3 GHz内的电磁屏蔽效能,计算结果与fine-FDTD算法结果吻合很好,且计算效率大大提高。     

基于柔性屏蔽材料混响室的设计与应用

利用柔性屏蔽材料不平整性使屏蔽腔内场环境易于满足各向同性、均匀分布、随机极化统计特征的特点,研究了三种不同柔性屏蔽材料搭建的模式搅拌混响室的可行性。在Z字形搅拌器的作用下通过测量得到低频场均匀性和高频归一化电场的概率密度函数,根据IEC 61000-4-21-2011标准和理想混响室模型验证了所搭建混响室的有效性。在此基础之上,通过实验测量分析了搅拌器转速、天线高度、天线位置对归一化电场概率密度函数(PDF)的影响,并利用所搭建混响室对加载开孔电大金属腔的电磁屏蔽效能进行了测试。研究结果表明利用柔性屏蔽材料搭建混响室具有较好的可行性。     

拓扑半金属材料的单晶生长研究进展

拓扑半金属已经成为凝聚态物理研究的一个热点领域,这类材料的单晶生长是研究其物理性质的基础.目前,对于拓扑材料的研究已经形成了以理论计算为指引,对潜在的拓扑材料进行单晶制备,并结合物性测量对理论预言加以验证的科研合作方式.在这种科研团队合作中,单晶生长起衔接作用.本文介绍了近年来拓扑半金属材料单晶生长方法,涵盖了拓扑Dirac半金属、Weyl半金属、Node-Line半金属以及其他打破常规分类的拓扑绝缘体及拓扑半金属材料等,并针对各个材料,详细总结了其生长方法.     

Ni/Au/n-GaN肖特基二极管可导位错的电学模型

可导线性位错被普遍认为是GaN基器件泄漏电流的主要输运通道,但其精细的电学模型目前仍不清楚.鉴于此,本文基于对GaN肖特基二极管的电流输运机制分析提出可导位错的物理模型,重点强调:1)位于位错中心的深能级受主态(主要Ga空位)电离后库仑势较高,理论上对泄漏电流没有贡献; 2)位错周围的高浓度浅能级施主态电离后能形成势垒高度较低的薄表面耗尽层,可引发显著隧穿电流,成为主要漏电通道;3)并非传统N空位,认为O替代N所形成的浅能级施主缺陷应是引发漏电的主要电学态,其热激活能约为47.5 meV.本工作亦有助于理解其他GaN器件的电流输运和电学退化行为.     

Two-dimensional multiplicity fluctuation analysis of target residues in nuclear collisions

Multiplicity fluctuation of the target residues emitted in the interactions in a wide range of projectile energies from 500 A MeV to 60 A GeV is investigated in the framework of two-dimensional scaled factorial moment methodology.The evidence of non-statistical multiplicity fluctuation is found in 16 O-AgBr collisions at 60 A GeV,but not in 56 Fe-AgBr collisions at 500 A MeV,84 Kr-AgBr collisions at 1.7 A GeV,16 O-AgBr collisions at 3.7 A GeV and 197 Au-AgBr collisions at 10.7 A GeV.