Microstructure,optical,and photoluminescence properties ofβ-Ga2O3films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga₂O₃films are prepared on polished Al₂O₃(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga₂O₃film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_Ga^2-at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga₂O₃film-based electronic devices.     

InAs(001)表面脱氧动力学分析

利用反射式高能电子衍射(RHEED)实时监控对InAs衬底进行两步完全脱氧的过程, 对比了有低(高)砷等效束流压强保护下采用两步法对InAs衬底缓慢长时间的高温脱氧过程. InAs衬底两步完全脱氧法的第一步为传统的缓慢升温脱氧方法, 第二步为高温In束流辅助脱氧方法. 衬底高温脱氧的RHEED衍射图样说明了高温In束流辅助脱氧最终完全清除传统的缓慢升温法无法去掉的残留氧化物, 通过脱氧完成同质外延生长后的扫描隧道显微镜图像, 说明高砷等效束流压强保护下的脱氧方法是可行的; 分析了高温In束流能完全清除衬底表面残余In氧化物的原理.关键词：热分解Ⅲ-V族半导体反射式高能电子衍射     

Al液滴在GaAs表面的熟化行为研究

为探究Al液滴在GaAs表面的熟化行为,利用液滴外延法在GaAs衬底表面制备Al液滴。在零As压环境下,通过控制退火时间有效控制Al液滴的生长、成核。结合热力学原理和晶体生长理论对样品形貌变化现象进行物理解释,构建出液滴形貌变化过程中熟化、刻蚀和扩散行为的基本模型。理论计算表明,液滴在熟化行为达到退火239 s的平衡点后,被向下刻蚀和向外扩散两个行为同时消耗。     

基于分子束外延技术可控制备Ga原子团簇的研究

本研究基于分子束外延（Molecular Beam Epitaxy,MBE）技术在Si (100)衬底表面成功制备金属Ga原子团簇. 通过控制变量法,研究其尺寸形貌与工艺参数之间的关系. 第一组对照实验分别在940℃、970℃、1000℃的Ga源温度下制备Ga原子团簇. 实验结果表明,Ga源温度的升高导致Ga的蒸发量增加,进而沉积在Si衬底表面的Ga原子增多,Ga原子自组装成团簇,最终表现为Ga原子团簇的高度升高. 第二组对照实验分别在3 s、6 s、10 s 、40 s、50 s、60 s的沉积时长下制备Ga原子团簇. 实验结果表明,沉积时长增加导致团簇的高度逐渐增加,主要由新吸附原子和竞争效应驱动. 第三组对照实验分别在0 s、60 s、300 s的退火时长下制备Ga原子团簇. 实验结果表明,退火时长的增加导致团簇的高度下降和团簇内的原子重新排列和分布有关. 第四组对照实验分别在420℃、500℃的退火温度下制备Ga原子团簇. 实验结果表明,升温至500℃退火会促进Ga原子团簇呈现有序排列,是表面原子的热运动和Ga原子团簇与Si (100)的晶格匹配度的共同作用的结果.     

AlxGa1-xAs材料结构与物理特性的第一性原理研究

基于密度泛函理论,对Al组分由0~1变化时AlxGa1-xAs体系的晶体结构、差分电荷密度、光电性质以及热力学性质进行第一性原理计算。得到AlxGa1-xAs体系的晶格常数a与Al组分x之间呈线性增加关系。能带结构图显示其禁带宽度将随掺入Al组分x的增加而变大,并且当x≥0.5时,体系能带由直接带隙变为间接带隙。静介电系数ε1(0)随掺入Al组分增加而减小,吸收系数带边随x增大而发生蓝移现象。由材料体系的德拜温度随Al组分的变化情况可知,Al组分增加,体系的声速和弹性劲度常数也相应地增大,高温时比热容的非线性增大是单位质量内AlxGa1-xAs的原胞数非线性增加所导致。通过分析不同Al组分下AlxGa1-xAs体系的光电特征、热力学性质,从而为AlxGa1-xAs在光电子器件以及太阳能电池等方面的应用以及后续的深入研究打下理论基础。     

Step instability of the In_0.2Ga_0.8As （001） surface during annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8 As/GaAs(001) surface has been investigated by scanning tunneling microscopy (STM). The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton–Cabrera–Frank (BCF) model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.     

Step instability of the surface during Ino.2Gao.sAs （001） annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs（001） surface has been investigated by scanning tunneling microscopy （STM）. The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton Cabrer-Frank （BCF） model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.