奇偶相干态的高阶压缩及其准概率分布函数

本文研究了奇偶相干态的高阶压缩和它们的各种准概率分布函数,结果表明,这两个态的高阶压缩性质是相互排斥的,特征函数和Wigner函数都不是高斯型,而且Wigner函数也不恒为正定,准概率密度(QPD)图形既不是椭圆,也不是月牙状,而是两叶花瓣状,显示出态的QPD图形不能说明态的压缩类型。 关键词：     

神经网络的函数逼近能力分析

本文综述了多层前传网络（ＭＬＰ）及径向基函数网络（ＲＢＦ）对函数任意精度逼近的能力，比较了两种网络的最佳逼近特性。对激活函数类的扩充作了介绍，并说明有限数值精度对函数逼近能力实现的影响。     

元素的起源与0号元素

论述元素的起源是以中子为起点,中子是特殊的0号元素。以中子的衰变特点、核反应的特点、与质子类同的特点、与稀有气体元素类同的特点以及中子星的存在、四中子的发现等论据,提出应当把中子看作元素并纳入元素周期表中。建议给这个特殊的元素命名为"中"。     

Free-space propagation of autofocusing Airy vortex beams with controllable intensity gradients

Vortex splitting is one of the main causes of instability in orbital angular momentum(OAM) modes transmission. Recent advances in OAM modes free-space propagation have demonstrated that abruptly autofocusing Airy vortex beams(AAVBs) can potentially mitigate the vortex splitting effect. However, different modes of vortex embedding will affect the intensity gradients of the background beams, leading to changes in the propagation characteristics of vortex beams. This study presents the unification of two common methods of coupling autofocusing Airy beams with vortices by introducing a parameter(m), which also controls the intensity gradients and focusing properties of the AAVBs. We demonstrate that vortex splitting can be effectively reduced by selecting an appropriate value of the parameter(m) according to different turbulence conditions. In this manner,the performance of OAM-based free-space optical systems can be improved.     

具有HollingⅡ型功能反应相互干扰捕食系统的全局吸引性

研究了一类具有HollingⅡ型功能反应相互干扰捕食系统,利用比较原理和迭代法得到了系统正平衡点全局吸引的充分条件.最后,通过数值模拟阐述了所得结论的正确性.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

Improved performance of Au nanocrystal nonvolatile memory by N_2-plasma treatment on HfO_2 blocking layer

The N_2-plasma treatment on a HfO_2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO_2/Si O2/p-Si are also characterized. After N_2-plasma treatment, the nitrogen atoms are incorporated into HfO_2 film and may passivate the oxygen vacancy states. The surface roughness of HfO_2 film can also be reduced. Those improvements of HfO_2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N_2-plasma is introduced into Au nanocrystal(NC) nonvolatile memory to treat the HfO_2 blocking layer. For the N_2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N_2-plasma treated device. It can be concluded that the N_2-plasma treatment method can be applied to future nonvolatile memory applications.