新重丰中子核素209Hg

报道了重丰中子核素²⁰⁹Hg的首次合成、鉴别和半衰期测定．     

Configuration of the valence neutrons of 17B

The reaction cross section of ~(17)B on ~(12)C target at(43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou(RIBLL).The root-mean-square matter radius(R_(rms))was deduced to be(2.92±0.10)fm,while the R_(rms)of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively.Assuming a"core plus 2n"structure in ~(17)B,the mixed configuration of(2s_(1/2))and(1d_(1/2))of the valence neutrons is studied and the s-wave spectroscopic factor is found to be(80±21)%.     

Pb-Mg-Al合金腐蚀机理的电子理论研究

为了了解Pb-Mg-Al合金腐蚀的物理本质, 本文采用基于第一性原理的赝势平面波方法系统地计算了Pb-Mg-Al合金中各物相的结合能、费米能级和局域态密度等电子结构参数, 分析了合金的电化学腐蚀机理. 计算结果表明：Pb-Mg-Al合金中各主要组成物相稳定性大小关系为 Mg₁₇Al₁₂>Mg₂Pb>Mg;Mg,Mg₂Pb和Mg₁₇Al₁₂的费米能级存在E_f(Mg)>E_f(Mg₂Pb)>E_f(Mg₁₇Al₁₂)的关系, 说明Mg最容易失去电子, Mg₂Pb次之, Mg₁₇Al₁₂最难;局域态密度表明, 在同样的外界条件下, 体系中Mg相和Mg₂Pb相对于Mg₁₇Al₁₂均处于不稳定的状态, 容易失去电子, 即容易发生腐蚀. Pb-Mg-Al合金体系中不同物相的费米能级差构成了电化学腐蚀的电动势, 导致电子从费米能级高的Mg相和Mg₂Pb相流向费米能级低的Mg₁₇Al₁₂相, 使Pb-Mg-Al合金发生腐蚀.     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

微振动的激光外差测量

微振动的测量在科学技术和工业应用中都有着重要的意义.比如在材料性质的研究中,在高速转动系统的测量和研究中,以及在实现重力波接收的努力中,微振动的测量都是很重要的一个方面。 激光和无线电技术的结合,实现了光频范围的外差测量,利用它的灵敏度高的特点,我们做了一个测量压电陶瓷微振动的实验. 一、实验原理 图1为一个迈克尔逊干涉仪,反射镜M1、M2的坐标已分别标出,在忽略相位常数的情况下(这对原理的叙述无影响),到达接收器D的两路光可分别表示为:若反射镜M1为被测目标,它在作频率为Ω、振幅为η的微振动,即 y一岁。 O81n(0【干9)则…     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

600MeV 18O+natPb(厚靶)系统生成Hg同位素独立产额测量(Ⅰ)实验和技术

采用在束气相热色谱的Hg元素分离方法和特殊的探测技术,测量了600MeV ¹⁸O束轰击厚天然铅靶生成的¹⁸⁰Hg至²⁰⁹Hg计20余种放射性Hg同位素产物的独立截面,描写了实验装置、探测技术、γ谱分析以及从递次衰变子体的γ活性来提取Hg同位素生成截面的方法.     

元素的起源与0号元素

论述元素的起源是以中子为起点,中子是特殊的0号元素。以中子的衰变特点、核反应的特点、与质子类同的特点、与稀有气体元素类同的特点以及中子星的存在、四中子的发现等论据,提出应当把中子看作元素并纳入元素周期表中。建议给这个特殊的元素命名为"中"。     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.