Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.     

Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering

CuInSe2(CIS) nanoparticle thin films have been prepared by radio frequency reactive magnetron sputtering from compound ternary fan-shaped targets on low-temperature substrates with pure argon gas as the atmosphere.The stoichiometry of the ternary compound semiconductor quantum dots can easily be controlled by the ratios of the ternary elements and sputtering parameters.CIS nanoparticle thin films regularly shaped and distributed reasonably uniform in size on substrates of 7059 glass etc can be grown in this way.The average particle diameter can be varied between 40-80 nm by an appropriate choice of the substrate temperature,power density and total CIS coverage.the optical and electrical properties of the CIS films have also been studied.     

Anomalous Temperature Dependence of Photoluminescence in GaInNAs／GaAs Multiple Quantum Wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells grown on a GaAs substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities.The energy position of the dominant PL peak shows an anomalous S-shape temperature dependence instead of the Varshni relation.By careful inspection,especially for the PL under lower excitation power density,two near bandedge peaks are well identified.These are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations,respectively.It is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the S-shape shift observed in GaInNAs.A quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.     

Linear Cavity Erbium—Doped Fibre Laser with Tunable Wavelength Range of 112nm

We report on a linear cavity erbium-doped fibre laser with a large tuning range of 1509-1621nm.We obtain a 1dB flat tuning range of 1538-1613 nm and a 3dB tuning range of 1516-1621 nm.The threshold at 1580 nm is 6.1mW,the slope efficiency is 0.193 and the output power is 18.2mW,when 100mW pump power at 1480nm is provided.High signal-to-noise ratios of better than 60 dB are achieved within all the tuning ranges.     

Fifth—Order Harmonic Generation using a Coherent Controlled Two—Pulsed Optical Field

We have experimentally studied the characteristics of fifth-order harmonic radiation produced by two coherent femtosecond laser pulses with a changeable relative phase.The intensities of harmonic generation are found to increase with the coherent degree.In one optical Period,the temporal variation of harmonics exhibits an asymmetric characteristic,which is interpreted in terms of ionization theory and the deformation of the wave packets of fundamental field contribution to harmonic generation.     

Optical Properties of ZnFe2O4—SiO2 Granular Films Prepared by Radio—Frequency Magnetron Sputtering

We report on the optical properties of ZnFe2O4-SiO2 granular films prepared on quartz substrates by the radio-frequency magnetron sputtering method.Post-annealing was performed at different temperatures under flow oxygen atmosphere.The morphology and Structures of ZnFe2O4 nanoparticles were characterized by x-ray different line types in the optical absorption curves of ZnFe2O4-SiO2 granular films.The critical transition of line types occurs when ZnFe2O4 changes from amorphous to crystalline,and the transition temperature increases with the increasing content of ZnFe2O4.There is an obvious blueshift of the optical absorption edge of the granular films with the decreasing annealing temperature.     

A Calculation Approach to Elastic Constants of Crystallines at High Pressure and Finite Temperature

Elastic constants of Na and Li metals are calculated successfully for temperatures up to 350K and pressures up to 30GPa using a scheme without involving any adjustable parameter.Elastic constants are assumed to depend only on an effective pair potential that is only determined by the average interatomic distance.Temperature has an effect on elastic constants by way of charging the equilibrium.The elastic constants can be obtained by fitting the relationship between total energy and strain tensor using the new set of lattice parameters obtained by calculating displacement of atoms at the finite temperature and at a fixed pressure.The relationship between the effective pair potential and the interatiomic distance is fitted by using a series of data of cohesive energy corresponding to lattice parameters.     

A Novel Contactless Method for Characterization of Semiconductors：Surface Electron Bean Induced Voltage in Scanning Electron Microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices.The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM).The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface.The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf.It is large enough for the detection of the induced surface potential.The irradiation mode of electron beam (e-beam) influences the signal generation When the e-beam irradiates on the surface of semiconductors continuously,a differential signal is obtained.The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection.The polarity of induced potential depends on the structure of potential barriers and surface states of samples.The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.     

Determination of the Potential Barrier at the Metal／Oxide Interface in a Specular Spin Valve Structure with Nano—oxide Layers Using Electron Holography

The local potential distribution in a specular spin valve structure with nano-oxide layers has been mapped by using off-axis electron holography in a field emission gun transmission electron microscope.A potential jump of 3-4 V across the metal/oxide interface was detected for the first time.The presence of the potential barrier confirms the formation of the metal/insulator/metal structure,which contributes to the increasing mean free path of spin-polarized elecrons via the specular reflection of spin-polarized electrons at the metal/oxide interface.It leads to nearly double enhancement of the magnetoresistance ratio from 8% to 15%.     

Excitation of Electromagnetic Waves by an Electron Ring Beam in a Magnetized Plasma Waveguide

We study the resonant interactions between an electron ring beam and plasma waveguide modes,This is motivated by the research of radio emission in low solar corona.We consider a density-depleted duct(above an active region near a flare site)that may be treated as a magnetized plasma waveguide.The electromagnetic waves excited in the wveguide are classified into the so-called E-type and B-type waves.The results show that there are two unstable modes of B-type waves propagating parallel and anti-parallel to the direction of the electron beam.The effect of the finite radius and boundary conditions of the waveguide on the excitation of the electron beam.The effect of the finite radius and oundary conditions of the waveguide on the excitation of waveguide modes is important.For a given B-type mode,the smaller the radius R,the larger the temporal and spatial amplification important.For a given B-type mode.the smaller the radius R ,the larger the temporal and spatial amplification rate,we suggest that these excited waveguide modes could be one of the processes respondsible for the observed solar radio emission.