Strong and broadband terahertz absorber using Si02-based metamaterial structure

We design and experimentally demonstrate a broadband metamaterial absorber in the terahertz （THz） band based on a periodic array of aluminum （A1） squares with two different sizes. A thin silicon dioxide （SiO2） film rather than a conventional polyimide （PI） layer is used as a dielectric spacer to separate A1 squares from the platinum （Pt） ground plane in our design, which significantly improves the design precision and the feasibility of the device fabrication. The combination of different sizes of AI squares gives rise to an absorption bandwidth of over 210 GHz with an absorption of over 90%. Our results also show that our device is almost polarization-insensitive. It works very well for all azimuthal angles with an absorption of beyond 80%.     

AlN插入层对硅衬底GaN薄膜生长的影响

利用金属有机化合物气相外延沉积技术在2inch(5.08cm)Si(111)图形衬底上生长了GaN外延薄膜,在Al组分渐变AlGaN缓冲层与GaN成核层之间引入了AlN插入层,研究了AlN插入层对GaN薄膜生长的影响。结果表明,随着AlN插入层厚度的增加,GaN外延膜(002)面与(102)面X射线衍射摇摆曲线半峰全宽明显变小,晶体质量变好,同时外延膜在放置过程中所产生的裂纹密度逐渐减小直至不产生裂纹。原因在于AlN插入层的厚度对GaN成核层的生长模式有明显影响,较厚的AlN插入层使GaN成核层倾向于岛状生长,造成后续生长的nGaN外延膜具有更多的侧向外延成分,从而降低了GaN外延膜中的位错密度,减少了GaN外延膜中的残余张应力。同时还提出了一种利用荧光显微镜观察黄带发光形貌来表征GaN成核层形貌和生长模式的新方法。     

光电图像光照不均蜕化的校正及阈值分割方法*

分析了CCD获取的图像光照不均蜕化产生原因.针对光照不均蜕化的印刷电路板图像的具体情况,用同态滤波器在频域空间进行滤波而增强图像,从而改善图像的目标与背景对比度.讨论了最大类间方差法,给出了其优点.为了更好的分割图像,在此基础上,考虑两类间距与各类内聚性对图像分割的不同影响,提出了一种改进的最大类间方差法.最后对光照不均蜕化的PCB光电图像用不同方法进行了实验,结果表明改进方法能更好地分割图像.     

EXPECTED PRESENT VALUE OF TOTAL DIVIDENDS IN THE COMPOUND BINOMIAL MODEL WITH DELAYED CLAIMS AND RANDOM INCOME

In this paper, a compound binomial model with a constant dividend barrier and random income is considered. Two types of individual claims, main claims and by-claims, are defined, where every by-claim is induced by the main claim and may be delayed for one time period with a certain probability. The premium income is assumed to another binomial process to capture the uncertainty of the customer＇s arrivals and payments. A system of difference equations with certain boundary conditions for the expected present value of total dividend payments prior to ruin is derived and solved. Explicit results are obtained when the claim sizes are Kn distributed or the claim size distributions have finite support. Numerical results are also provided to illustrate the impact of the delay of by-claims on the expected present value of dividends.     

薄层剪切二元颗粒分离过程动力学特性分析

颗粒分离的物理机制目前没有统一解释.本文采用三维离散元模型,模拟了剪切槽内两种尺度的球形二元颗粒在高度方向上位置互相颠倒的现象.关注大颗粒跃升过程中的运动学和动力学行为特征,观测到大颗粒跃升过程分三个阶段:弛豫阶段、起跳阶段和平衡阶段.定量分析了摩擦系数对颗粒受力等具体影响.结果显示弛豫时间随着摩擦系数的增大而减少,颗粒最终的平衡高度随着摩擦系数的增大而增大.定义了浮升因子,发现浮升因子在大颗粒起跳点处陡降,形成大颗粒跃升的"窗口时间".揭示大颗粒的起跳是受力脉动高频特性和浮升因子陡降两个因素共同作用的结果,即颗粒的上升运动由受力和周围空间决定.     

Robust H∞state estimation for a class of complex networks with dynamic event-triggered scheme against hybrid attacks

We investigate the dynamic event-triggered state estimation for uncertain complex networks with hybrid delays suffering from both deception attacks and denial-of-service attacks.Firstly,the effects of time-varying delays and finitedistributed delays are considered during data transmission between nodes.Secondly,a dynamic event-triggered scheme(ETS)is introduced to reduce the frequency of data transmission between sensors and estimators.Thirdly,by considering the discussed plant,dynamic ETS,state estimator,and hybrid attacks into a unified framework,this framework is transferred into a novel dynamical model.Furthermore,with the help of Lyapunov stability theory and linear matrix inequality techniques,sufficient condition to ensure that the system is exponentially stable and satisfies H∞performance constraints is obtained,and the design algorithm for estimator gains is given.Finally,two numerical examples verify the effectiveness of the proposed method.     

窄带空芯反谐振光纤的制备及其模式转换应用研究

空芯反谐振光纤由于其优异的光学特性,如低非线性、超低群速度色散、低温度敏感性和高损伤阈值等,使其在大功率激光传输、量子通信、传感、航空航天等多个领域有着潜在的应用,成为未来最具发展潜力的特种光纤.由于空芯反谐振光纤能够将99.9%以上光场限制在光纤的空芯区域中,这也使其成为光纤滤波器、模式转换等领域的重要光子器件.本文针对980 nm单模激光器的迫切需求,研制了一种应用于980 nm多模激光转980 nm单模激光的空芯反谐振光纤,并对其应用进行了实验验证.     

高功率808nm InGaAsP—GaAs分别限制结构的半导体激光器

介绍了研究分别限制结构ＩｎＧａＡｓＰ－ＧａＡｓ半导体激光器所得到的最新成果。利用引进的俄国技术，基于量子阱结构的ＩｎＧａＡｓＰ－ＧａＡｓ激光器，可用短时间液相外延技术制造。在ＧａＡｓ衬底上制成的ＩｎＧａＡｓＰ－ＧａＡｓ分别限制结构的激光器，主要参数如下：发射波入λ＝８０８ｎｍ，阈值电流密度Ｊ＝３００Ａ／ｃｍ＾２，对于条宽ω＝１００μｍ的激光器，连续功率为１－２Ｗ。     

新产品成败因素多元分析

本文运用方差分析、 ｘ２检验、主成分分析、判别分析，对企业新产品开发成败问题进行了描述性实证研究，揭示了新产品成败的关联因素。研究结果说明，成功地开发新产品，就在于通过合理的开发步骤，开发出质量好创新大的新产品，适时投放到容量大需求强的市场。     

Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)

A blue emission originated from In GaN/GaN superlattice(SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells(QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.