Dielectric Analysis of Dynamic Fouling Behavior on Surface of Polyethersulfone Composite Ultrafiltration Membrane

基于界面极化与静电场理论建立了聚醚砜复合超滤膜表面污染层与溶液体系的介电解析模型. 应用参数敏感性分析和介电测量研究了体系中浓差极化层与滤饼层的厚度与电导率对超滤体系介电弛豫的影响机制. 结果表明超滤过程中浓差极化层能快速建立,而滤饼层的形成是一个增长与剥蚀的动态过程;并且浓差极化层与滤饼层的电学性质是影响超滤体系介电谱的关键因素. 比较介电测量与模拟结果证实了建立的超滤体系介电解析模型能够有效可靠地描述与解释超滤体系产生介电驰豫的机制.     

Study of η and η＇ physics at BES-III

Decays of both η and η＇ provide very useful information in our understanding of low-energy QCD, and experimental signatures for these decays would be extremely helpful at BES-III. The rare decays of the η and η＇ mesons could serve as a low-energy test of the Standard Model and its beyond. The sensitivities of the measurements of η and η＇ decays are discussed at BES-III, in which the η and η＇ mesons are produced in the ψ decays.     

为了忘却的纪念——纪念叶企孙先生诞辰120周年

正叶企孙,当我在课堂上提起这个名字的时候,班里的学生们都面面相觑,表示不曾知晓。也罢,自己年少时,也不知道叶先生其人其事。在真正了解叶先生生平事迹之前,很多人也许对这个名字略有耳闻:"是个科学家吧","是个搞物理的吧",或"当过清华的校长吧"……并未想深入了解先生的生平。我想,如果完整地了解叶先生的人生轨迹之后,大多数人都会像我一般,为先生     

两种4’-对甲苯磺酰基异黄酮衍生物的合成及抗氧化性质研究

摘要 合成了未见文献报道的脂溶性较好的7-甲氧基-4’-对甲苯磺酰基异黄酮（L1）和7-氧乙酸乙酯-4’-对甲苯磺酰基异黄酮（L2）,并得到了L1的单晶结构,采用IR、1H NMR、元素分析和X射线单晶衍射对L1进行了结构表征. 利用紫外分光光度法研究了化合物L1和L2对DPPH•自由基的清除作用,并采用量子化学半经验法（AM1）和Hartree-Fock 从头算的方法,计算了化合物分子中相关原子的电荷密度,探讨了它们与DPPH•自由基反应的可能活性位点. 获得了理论计算和光谱实验相一致的结果. 晶体结构测定表明, L1晶体属单斜晶系,P2 (1)/c点群, a=20.041(5)Å ,b=6.0876(17)Å ,c=16.516(4)Å. 理论推断和光谱实验表明,L2对DPPH自由基的清除效果好于L1.     

加权Bergman空间上的解析Toeplitz算子的约化子空间

证明了加权Bergman空间上以有限Blaschke乘积φ为符号的解析Toeplitz算子Bφ至少存在一个约化子空间M,并且Bφ在M上的的限制酉等价于加权Bergman位移.     

光波导脉冲耦合器研究

提出并实验了一种新的波导型脉冲耦合器的构成和动作机理,将光阻断效应表现的光粒子性和分支波导模式耦合表现的光波动性在光波导载体上有机结合起来,用全光学方式实现了输入作用电脉冲与输出同步电脉冲之间的脉冲耦合动力学过程.     

Decay vertex reconstruction and 3-dimensional lifetime determination at BESⅢ

This paper focuses mainly on the vertex reconstruction of resonance particles with a relatively long lifetime such as Ks^0, A, as well as on lifetime measurements using a 3-dimensional fit. The kinematic constraints between the production and decay vertices and the decay vertex fitting algorithm based on the least squares method are both presented. Reconstruction efficiencies including experimental resolutions are discussed. The results and systematic errors are calculated based on a Monte Carlo simulation.     

Track reconstruction in the BESⅢ muon counter

The reconstruction algorithm for BESⅢ Muon Counter, MucRecAlg, is developed with the objectoriented language C＋＋ in BESⅢ offine software environment. MucRecAlg consists of the following functions：to find track seeds either from extrapolation of tracks in the main drift chamber or from the fired strips in muon counter, to select fired strips associated to the candidate tracks, to fit the candidate tracks with a linear or quadratic function and to calculate other parameters of the tracks for muon identification. Monte Carlo samples are generated to check the performance of the reconstruction package, such as reconstruction effciency, muon remaining rate and pion rejection rate, etc. The preliminary results show that the pion rejection rate is around 3%—4% while the muon remaining rate is better than 90% in 0.4—1.6 GeV/c momentum region, which meets the requirement as shown in the design report.     

非晶态As2S8半导体薄膜的光致结构变化效应研究

实验研究了非晶态As2S8半导体薄膜在光照、退火-光照和退火-光照-退火-光照关连作用下的光折变效应及淀积态与退火态两种膜系光致体积变化现象.采用棱镜耦合技术、Raman光谱和X线衍射测试技术,确认了As2S8薄膜经紫外光辐照后薄膜密度增高、折射率增大的现象.实验表明,淀积态As2S8薄膜经紫外光照后,折射率变化的最大增量可达到0.06,而退火态As2S8薄膜经紫外光照射后,其折射率最大变化比前者要小一个数量级,约为0.005 7.淀积态和退火态两种膜系紫外光照后,体积缩小,这与As2S3非晶态薄膜的情况不同,体积变化率分别为－3.5%和－2.1%.实验还显示,退火态的As2S8薄膜存在折射率完全可逆现象.