Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future.     

Study on the approximative formula for the far-field of a Gaussian beam under circular aperture diffraction and its divergence

The approximative formula for the far-field diffraction of a Gaussian beam through a circular aperture is obtained by using the superposition of Gaussian beams instead of the aperture function, and the explicit expression for calculating the beam divergence is also gained. Using the formula, the influences of the aberrations on the far-field wavefront and the beam's divergence are researched, and the results show that the large aberrations badly affect the far-field wavefront and the divergence. It is suggested that the aberrations and the diffractions should be avoided when designing the transmitter.     

铟封前后透射式GaAs光电阴极光谱响应特性的测试与分析

利用自行研制的光谱响应测试仪工程化样机,对透射式GaAs光电阴极在高温激活结束、低温激活结束以及铟封成管后的光谱响应特性进行了测试。结果显示,铟封后阴极整个响应波段的光谱响应下降,长波响应受到最显著的影响,表现为800~815 nm之间长波响应大幅度衰减,截止波长和峰值波长向短波移动,峰值响应和积分灵敏度减小,最终的光谱响应曲线变得平坦。阴极参量的计算结果反映铟封后阴极的表面逸出几率降低,说明铟封引起阴极表面激活层发生变化,使得能量较低的长波段光生电子不容易逸出,阴极长波响应和灵敏度随之降低。进一步分析了铟封过程中影响阴极表面激活层的因素。     

Effect of the nonlinearity of the CCD in Fourier transform profilometry on spectrum overlapping and measurement accuracy

In Fourier transform profilometry (FTP), we must restrain spectrum overlapping caused by the nonlinearity of the charge coupled device (CCD) and increase the measurement accuracy of the object shape. Firstly, the causes of producing higher-order spectrum components and inducing spectrum overlapping are analysed theoretically, and a simple physical explanation and analytical deduction are given. Secondly, aiming to suppress spectrum overlapping and improve measurement accuracy, the influence of spatial carrier frequency of projection grating on them is analysed. A method of increasing the spatial carrier frequency of projection grating to restrain or reduce the spectrum overlapping significantly is proposed. We then analyze the mechanism of how the spectrum overlapping is reduced. Finally, the simulation results and experimental measurements verify the correction of the proposed theory and method.     

基于损失函数的GARCH类模型波动率预测评价

本文的目的是通过利用多种损失函数评估三种GARCH模型的预测精度,找到最优的股指期货日内波动率研究预测模型。利用之前的研究结果,三个沪深300股指期货日内一分钟日内收益率被用作研究对象,对标准GARCH,eGARCH以及RealGARCH三个模型做了实证检验,并利用多种损失函数,从不同角度衡量三个波动率模型的预测精度。研究发现：Sample1样本的RealGARCH模型有最好的预测效果,而Sample2样本与Sample6样本的eGARCH模型有最好的预测精度。因此,在对沪深300股指期货日内波动率研究时,应根据其样本特征,优先选择具有能够反映非对称特征的波动率模型来刻画波动过程,对未来波动率做预测。     

500.8 nmNd∶YAG青光激光器光学薄膜的设计与制备

从双波长激光运转及和频的机理出发，对LD泵浦Nd∶YAG，LBO腔内和频500.8 nm〖JP2〗青光激光器所使用的光学薄膜进行了设计和制备.在激光反射镜的设计上，为了达到最佳的和频输出，对膜系要求进行了深入分析.采用对谐振腔一端面反射率固定不变并通过对另一腔镜基频光的透射率进行调谐的方法, 在给出合理初始结构后，利用计算机对膜厚进行了优化.并采用双离子束溅射沉积的方法，通过时间监控膜厚法成功制备出青光激光器所使用的全介质激光反射膜, 在室温下实现946 nm和1064 nm双波长连续运转，并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现500.8 nm青色激光连续输出.当泵浦注入功率为1.4 W时和频青光最大输出达20 mW.     

Teleportation of Multi-qudit Entangled States

We propose a method to realize the teleportation of an unknown entangled state that consists of many qudits through a partially entangled-qudit quantum channel with the help of 2 log2 d-bit classical communication. The operations used in the teleportation process include a generalized Bell-state measurement and a series of singlequdit π-measurements performed by Alice, a series of generalized qudit-Pauli gates and two-level unitary gates, as well as a qubit measurement performed by Bob. For a maximally entangled quantum channel, the successful probability of the teleportation becomes unit.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

国内首次研制成功的高温超导移动通讯基站子系统原理性样机

高温超导移动电话基站子系统可以明显提高基站的性能，因此受到广泛的重视。我们利用一个高性能超导滤波器，低噪声放大器，脉冲管制冷机和有关的微波线路集成了一台完整的高温超导移动通讯基站子系统原理性样机。该子系统是针对DCS1800基站系统，频段为1710-1785MHz，系统增益为18dB，该子系统是国内研制成功的首台原理性样机。这表明对高温超导微波器件的应用研究已取得了阶段性的重要成果。性能更好的实用子系统样机正在研制中。