各向异性Sobolev空间中拟线性椭圆型方程解的局部有界性

本文在很一般的结构条件下，证明了各向异性Ｓｏｂｏｌｅｖ空间中的拟线性椭圆方程解的局部有界性。     

硅霍耳元件和特斯拉计

霍耳效应是美国物理学家霍耳于１８７９年在金属中发现的．１９４８年以后,半导体的霍耳效应得到了广泛重视,制成了各种霍耳元件．首先出现的是锗霍耳元件,１９５５年出现了硅霍耳元件．近二十年来,随着化合物半导体材料（如ＩｎＡｓ,ＩｎＡｓＰ,ＧａＡｓ等）的出现,用化合物半导体制造的霍耳元件由于有较高的稳定性而越来越引起人们的重视（如西德西门子公司的ＦＡ,ＦＣ和ＳＶ系列,美国贝尔公司的ＢＨ系列）．其中有?...     

红光InAlAs量子点的结构和光学性质

利用ＭＢＥ方法在（００１）衬底上成功地生长密度大、尺寸小、发红光的ＩｎＡｌＡｓ／ＡｌＧａＡｓ量子点结构。通过原子力显微镜观察表明,ＩｎＡｌＡｓ量子的密度和大小都随覆盖厚度的增加而增大;发现Ａｌ原子的表面迁移率决定ＩｎＡｌＡｓ量子点的形貌,光荧光谱证实了量子点的发光峰值在红光范围,并结合形貌的统计得到了量子点的发光峰展宽主要昌受量子点的横向尺寸影响。     

环流问题与双小孔型脉冲管制冷机研究

１前言脉冲管制冷机已基本达到了实用化的程度。但在理论方面,仍有较多问题存在,其中双向进气型脉冲管制冷机内的环流问题成为一个讨论的热点和难点。１９９１年朱绍伟进行双向进气方案的实验验证时［１］,已经提到了环流问题,即进出双向阀门的流量不等造成的冷端温度...     

集成型硅光电负阻器件及应用研究

本文报道了对集成型硅光电负阻器件及其应用的初步研究结果。文中介绍了硅光电负阻器件(PLBT)的特性并对用该器件所构成的光控正弦波振荡器进行了实验研究。根据实验结果,文中还探讨了该类型振荡器在光调制方面所具有的功能.     

基于卷积神经网络的HL-2A装置H模辨识研究

基于HL-2A装置的放电实验数据,利用卷积神经网络和时间窗口算法开发了高约束(H)模时段的识别算法,得到了可靠的高成功率的高约束模时段识别结果。算法中,选取206次放电实验数据中等离子体储能及氘α通道信号作为双通道原始数据进行学习,得到一个深度为21层的二分类卷积神经网络。该网络模型经过其他474次放电数据的测试集检验,高约束模识别的正确率达到了98.17%。     

Realization of Fast All-Microwave Controlled-Z Gates with a Tunable Coupler

The development of high-fidelity two-qubit quantum gates is essential for digital quantum computing. Here,we propose and realize an all-microwave parametric controlled-Z(CZ) gates by coupling strength modulation in a superconducting Transmon qubit system with tunable couplers. After optimizing the design of the tunable coupler together with the control pulse numerically, we experimentally realized a 100 ns CZ gate with high fidelity of 99.38%±0.34% and the control error being 0.1%. We note that ...     

小角X射线散射应用研究若干进展

文章从小角X射线散射（small-ande X-ray scattering，SAXS）的理论分析出发，结合国内外SAXS理论和应用研究的最新动态，总结了文章作者所在的研究小组近年来在SAXS技术用于材料微结构表征方面的研究成果。主要包括以下三个方面的内容：（1）有机／无机杂化材料中电子密度波动的研究；（2）弦长度分布函数材料的周期结构的研究；（3）纳米粉末晶化过程的研究。     

Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.     

Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.