Existence of the transverse relaxation time in optically excited bulk semiconductors

Two basic types of depolarization mechanisms, carrier-carrier (CC) and carrier-phonon (CP) scattering, are investigated in optically excited bulk semiconductors (3D), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. The dephasing rates for both CC and CP scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1-\cos\chi), where \chi are the scattering angles. Analytical expressions of the polarization dephasing due to CC scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. These formulas, which reveal the trivial role of the Coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments.     

8-羟基喹啉铝高分子薄膜的荧光特性

In this paper, the solid state. polymer thin films of 8-hydroxylquinoline aluminum (Alq3) were made by spinning coat method. The fluorescence efficiencies and the luminescence spectra of them were measured via the laser systems. Various experimental factors were considered and tested. It was found that the peak wavelength of the luminescence spectra of the Alq3 polymer films shifted and that the purity of the samples affected its fluorescence efficiencies: the fluorescence efficiencies of impure samples were about three-fourth of that of the purified ones; fluorescence efficiencies of Alq3 doped in PMMA polymer was higher than that doped in PC and PEO. Under certain conditions, transparent thin film 10 layers can be achieved. This kind of polymer thin film of Alq3 exhibits well fluorescence response, but also has good stability. Spin coat method can greatly reduce the technical requirements comparing with the vacuum plating method.     

量子阱中电子自旋注入及弛豫的飞秒光谱研究

采用飞秒脉冲的饱和吸收光谱方法研究了GaAs/AlGaAs多量子阱中电子自旋的注入和 弛豫特性，测得电子自旋极化弛豫时间为80±10ps.说明了电子自旋 轨道耦合相互作用引 起局域磁场的随机化，是导致电子的自旋极化弛豫的主要机理. 关键词： 自旋电子学 半导体量子阱 飞秒激光光谱 自旋 轨道耦合     

LT-GaAs飞秒光电导之电场响应特性

利用飞秒光电导自相关技术研究了LT GaAs飞秒光电导开关时间随外加偏置电场的变化规律 .实验结果显示当外加偏置电场从0.5×10⁴ V/cm 上升到9.5×10⁴ V/cm 时，光电导 开关时间开始在200fs附近缓慢变化再迅速增加到750fs.这是由于随着外加电场增加，Fren kel-Poole效应导致的EL2缺陷中心库仑吸引势垒降低和电场增强的碰撞电离效应显著增强 ，导致载流子俘获截面减小，载流子寿命增加之故. 关键词： 光电导自相关技术 载流子俘获时间 Frenkel-Poole效应 电子碰撞电离效应     

Characterization of Femtosecond Low—Temperature—Grown GaAs Photoconductive Switch

A photoconductive response time,as short as 350fs,of a low-temperature-grown GaAs(LT-GaAs) micro-coplanar photoconductive switch has been measured and modelled to the ultrafast trapping of the photoexcited carriers in LT-GaAs.The coherent interference of the pump and probe pulses results in a narrow spike photocurrent autocorrelation signal which maps the femtosecond optical pulses.     

新型偶氮苯侧链共聚物的超快光致双折射特性

采用抽运探测方法测量了一种新型的含 4 偶氮苯 4′ 偶氮苯酚侧链的共聚物 (DAP PGMA)的光致异构特性。实验结果表明DAP PGMA比含单偶氮苯侧链共聚物P (MMA co MAZ)有较大的光致双折射效应 ,Δn～ 6 .6 0× 10 -4 ;同时DAP PGMA比P(MMA co MAZ)具有更快的开启速度 ,光致向向异性上升时间为 40 ps,这种皮秒量级的快过程对应于双偶氮苯生色团的顺反异构过程。     

飞秒激光与超快现象（I）

文章第Ｉ部分介绍飞秒激光的发展过程和应用概况，讨论了飞秒脉冲产生和测量的基本原理，以及近年来在物理和技术上的新进展，特别介绍了在飞秒激光器全固体化，小型化，高效化方面的进步，有关飞秒激光技术在超快现象研究中应用将在第Ⅱ部分介绍。     

飞秒激光与超快现象（II）

文章介绍超快现象研究的新进展，其中在飞秒相干光谱学、强场物理和超快光电子技术等领域的迅速进展，向人们展示了超快现象的真实世界。     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱