常用制冷工质稠密流体的黏度推算方法

本文通过关联无量纲化剩余黏度与对比密度的关系,提出了一种推算常用制冷工质稠密流体黏度的维里型黏度状态方程.应用该方程只需已知该工质的临界参数、分子量和偏心因子即可完成计算,使得迁移性质的计算在热力学面上和平衡性质的计算保持了完整的一致性.本文通过上述方法计算了9种常用制冷工质的液相黏度,与实验数据比较显示,总平均偏差为2.36%,最大偏差为27.6%.     

基准光栅重构傅里叶变换轮廓术

应用傅里叶轮廓变换术进行三维形貌测量中,为了获得待测物体的高度相位信息,通常需要采集两幅图像.因此当光学系统发牛变动时,必须重新采集基准光栅图像,不利于快速测量.提出一种从变形光栅图像中获取基准光栅图像信息的测量方法.首先在变形光栅图像中记录基准光栅信息,然后通过傅里叶分析提取基准光栅频率信息,通过图像分析获得基准光栅相位信息,最后重构出一幅完整的基准光栅图像,实现三维物体形貌测量.实验结果验证了该方法的可行的.     

An All-Thin-Film Electrochromic Device Composed of MoO3--LiBSO--NiOx Multilayer Structure

An all-thin-tilm （ATF） electrochromic device for modulating the optical transmittance is manufactured using magnetron sputtering. The devices consists of MoO3 as the main electrochromic layer, LiBO2 ＋Li2SO4 （LiBSO） as the ion conductor layer, and NiOx as the complementary electrochromic layer. Glass covered with indium tin oxide （ITO） is used as the substrate and the ITO film is used as the bottom electrode. The ITO film deposited on the top of the devices is used as the other electrode. The structure and morphology of the films are characterized by x-ray diffraction （XRD） and scanning electron microscopy （SEM）. The devices exhibit good optical properties with low transmittance values in the coloured state, and the optical modulation is measured by spectrophotometer in the wavelength range from 400 to 800nm. The average visible light transmittance reaches 50.2% and 3.7% in bleached and coloured state, respectively. The results indicate that such a monolithic system has great potential to be applied in smart windows.     

Sudden Death of Entanglement between Two Atoms with Initial Tripartite Entangled State in the Tavis--Cummings Model

We study the entanglement dynamics of two atoms with initial tripartite entangled W-like state in the Tavis-Cummings model. We find that the entanglement evolvement is sensitive not only to the entanglement degree of the initial state but also to the concrete form of the initial state. The so-called sudden death effect occurs only for some initial states.     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

Blow-up and Global Smooth Solutions for Incompressible Three-Dimensional Navier--Stokes Equations

We present some explicit self-similar blow-up solutions and some other solutions of the incompressible threedimensional Navier Stokes equations. These solutions indicate that in C^∞ the solution of Navier-Stokes equations does not always tend to a solution of Euler equations.     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si1-xGex合金半导体材料中CiCs 缺陷的性质进行探讨,同时也对比调查了CiOi 缺陷在Si和Si1-xGex合金中的性质. 在不同Ge含量的Si1-xGex合金中CiCs和CiOi缺陷的结构都具有较好的稳定性;从能量学角度,Ge原子不能与C或O原子直接成键. CiCs缺陷的A型和B型结构在Si1-xGex合金中表现出的行为基本类似,但是A型结构随着Ge含量的增加形成能逐渐减小,结构越来越稳定,而B型结构的形成能先有所下降后逐渐增加;A型和B型结构的能量差值随着Ge含量的增加先在小范围内变化后迅速下降. CiOi缺陷形成能的变化特征较为复杂. 纯Si体系在1000K及以上温度的等温退火过程中,CiCs缺陷的A型结构会向B型结构转变;Si1-xGex合金在进行等温退火时CiCs缺陷的A型结构的变化特征与退火温度、Ge含量和Ge取代的位置等因素有关.     

玻色-爱因斯坦凝聚体系中的混沌隧穿行为

研究了双势阱玻色-爱因斯坦凝聚(BEC)系统在外加周期调制下的混沌相变过程,着重讨论了混沌现象对BEC系统隧穿的影响.当外加调制频率与系统固有频率达到共振时,相平面会出现不稳定现象,即混沌现象.在量子情况下,研究了系统的Husimi函数随时间的演化.研究发现：当混沌现象出现时,系统中粒子间相互作用增大,使得混沌区域扩大,进而引起混沌辅助隧穿程度的变化. 关键词： 玻色-爱因斯坦凝聚 混沌 隧穿     

The relation between composition in laser absorption region and ambient pressure

In this paper, the compositions in a laser absorption region can be determined from the experiment of laser impulse coupling. When the ambient pressure varies from 9325 to 33325Pa, the compositions are vapour and plasma; while from 35325 to 101325Pa, they are ambient air and plasma. By analysing the relation between the degree of compression and the ambient pressure, the compositions can be determined and the variation of plasma can be explained.