管内污垢监测模型研究

提出了一种基于质量传递理论的监测模型。它不但适应热质同时交换现象,还增加了对单纯质交换的适应性,并且避免了因温差描述产生污垢热阻为负值的特异现象。最后进行了相关正交实验,表明了该监测模型的合理性。     

高压密封微波消解-ICP-AES法测定五种蒙药中无机元素

采用HNO3-HClO4消解体系分别对额日敦-乌日勒、德都红花七味丸、通拉嘎-5、乌珠目-7、给旺-9等五种蒙药样品进行高压微波消解制样,利用电感耦合等离子体原子发射光谱法(ICP-AES)同时测定了镁、铝、钙、铬、锰、铁、钴、镍、铜、锌、砷、硒、锶、钼、银、镉和铅等17种无机元素的含量。通过添加标准回收实验,回收率均在97.25%~106.35%之间,验证了分析数据的可靠性。所有元素测定结果的相对标准偏差均小于3.3%,具有良好的准确度和精密度。实验结果表明,其中常量元素Ca,Mg和Fe,Mn,Zn,Cu的含量较高,测定结果可为开发研制蒙药新制剂、研制蒙药的质量控制标准和提高蒙药药效提供理论依据。     

Fabrication of Mn-Doped GaN Nanobars

We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000oC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift （409 nm） are comparable to pure GaN（370 nm） at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.