非均匀展宽对超短激光脉冲传播特性的影响

用建立的"预报校正-四阶龙格库塔"数值算法研究了非均匀展宽二能级体系中超短激光脉冲的传播特性。计算结果表明,非均匀展宽线型的线宽对光脉冲传播会产生调制作用。当线宽大于脉冲的频谱宽度时,脉冲面积演化与面积定理相符且脉冲传播平稳;但随着线宽的减小,脉冲面积演化会越来越偏离面积定理,脉冲传播不再平稳并出现"拖尾"振荡。脉冲主峰的峰值和脉冲的传播速度也受到线宽的影响。     

亚纳秒光脉冲抽运光子晶体光纤产生的瓦级超连续谱

研究了亚纳秒脉冲抽运光子晶体光纤产生高功率超连续谱的机理.采用掺镱锁模光纤激光器产生的脉宽570ps光脉冲,抽运1.8m光子晶体光纤,得到了平均功率为1.15W、光谱覆盖范围为750nm的超连续谱.通过实验和模拟结果的对比和分析,证实了亚纳秒脉冲抽运1.8m PCF产生超连续谱时,调制不稳定性效应起了重要作用.在研究了不同抽运功率下输出的超连续谱变化后,发现随着抽运功率的提高,输出功率也更高且超连续谱覆盖波段也更宽,在瓦级输出功率下依然未达到饱和展宽状态,还有进一步提高功率和展宽光谱的空间.     

一个前向和后向安全的数字签名方案

针对前向安伞密码体制中某一时段私钥泄露会导致此时段后私钥的泄露这一问题,提出了一种同时具有前向和后向安全性的数字签名方案.在该方案中密钥由两部分的乘积组成,一部分在密钥演化中保证前向的安全,而另一部分在密钥演化中保证后向的安全,使得在当前密钥泄露的情况下,不仅以前时段的密钥不可计算,而且以后时段的密钥也是不可计算的.与已有的前向安全和容侵的数字签名方案相比,本文提出的方案不仅具有密钥容侵的优点,而且不需要多方参与.     

硅基锗薄膜选区外延生长研究

利用超高真空化学气相沉积系统, 基于低温Ge缓冲层和选区外延技术, 在Si/SiO₂图形衬底上选择性外延生长Ge薄膜. 采用X射线衍射、扫描电镜、原子力显微镜、拉曼散射光谱等表征了其晶体质量和应变等参数随图形尺寸的变化规律. 测试结果显示, 位错密度随着图形衬底外延窗口的尺寸减小而减少, Ge层中的张应变随窗口尺寸的增大先增大而后趋于稳定. 其原因是选区外延Ge在图形边界形成了(113)面, 减小了材料系统的应变能, 而单位体积应变能随窗口尺寸的增加而减少; 选区外延厚度为380 nm的Ge薄膜X射线衍射曲线半高宽为678", 表面粗糙度为0.2 nm, 表明选区生长的Ge材料具有良好的晶体质量, 有望应用于Si基光电集成.     

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InA1As Superlattice ＊

The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InA1As superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfecthess. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from exeitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.     

氧化铁红对印染废水中锑（V）的吸附性能

印染行业锑（Sb）污染严重,常规除锑工艺难以达标,铁氧化物对水中锑及其化合物具有良好的吸附效果,选取氧化铁红110、138与190,分别记为T110、T138、T190,对模拟印染废水中的Sb（V）进行吸附去除。结果表明,当Sb（V）初始浓度为200 μg·L^-1,投加量为0.2 g·L^-1时,T138的除锑效果最佳,去除率可达99.44%。XRD图谱显示,氧化铁红的主要成分为\alpha-Fe₂O₃。TEM与XPS图谱表明,T138的颗粒形状较不规则且相对粗糙,含还原态铁与丰富的羟基位点,有利于吸附Sb（V）。吸附动力学实验显示,Sb（V）吸附过程较符合准二级动力学模型,以化学吸附为主。吸附热力学结果表明,T110与T138对Sb（V）的吸附较符合Freundlich模型,T190则较符合Langmuir模型。在实际应用中,印染废水中共存的含氧阴离子与染料明显抑制氧化铁红对Sb（V）的吸附。     

循环氧化/退火制备GeOI薄膜材料及其性质研究

采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si_0.82Ge_0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11 nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540 nm,发光 关键词： GeOI 氧化 退火 光致发光谱     

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO？ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain （FDTD） method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.     

具有宽阻带特性的6阶自均衡高温超导滤波器

本文提出了一种新颖的L型阶跃阻抗谐振器,该谐振器具有结构紧凑、抑制二次谐波能力强及易于实现电耦合及磁耦合等特点。使用该谐振器设计并制作了一款具有小型化、高选择性及宽阻带特性的6阶自均衡高温超导滤波器。测试结果表明,在70 K温度下滤波器的中心频率为1 601 MHz,3 dB带宽为24 MHz,带内回波损耗<14.87 dB,带内最大插入损耗约为0.22 dB,60%带宽范围内群时延起伏<3.13 ns,通带两侧具有一对深度的传输零点,实现了1 632~5 511 MHz范围内衰减>60 dB的宽平坦阻带。     

Production of exotic neutron-deficient isotopes near N,Z=50 in multinucleon transfer reactions

The multinucleon transfer reaction in the collisions of ~(40) Ca+ ~(124) Sn at Ec.m. = 128.5 MeV is investigated using the improved quantum molecular dynamics model. The measured angular distributions and isotopic distributions of the products are reproduced reasonably well by the calculations. The multinucleon transfer reactions of ~(40) Ca +~(112) Sn, ~(58) Ni + ~(112) Sn, ~(106) Cd + ~(112) Sn, and ~(48) Ca + ~(112) Sn are also studied. This demonstrates that the combinations of neutron-deficient projectile and target are advantageous for the production of exotic neutron-deficient nuclei near N,Z =50. The charged particles' emission plays an important role at small impact parameters in the de-excitation processes of the system. The production cross sections of the exotic neutron-deficient nuclei in multinucleon transfer reactions are much larger than those measured in the fragmentation and fusion-evaporation reactions. Several new neutron-deficient nuclei can be produced in the ~(106) Cd + ~(112) Sn reaction. The corresponding production cross sections for the new neutron-deficient nuclei,~(101,112) Sb,~(103) Te,and ~106,107) I,are 2.0 nb,4.1 nb,6.5 nb,0.4 μb and 1.0 μb,respectively.