不对称催化合成中手性膦配体的研究进展(Ⅰ)(待续)

对近十多年来不对称催化合成领域中出现的手性膦配体进行了综述,按其不对称中心以及结构上的特征加以分类,并对其催化性能进行总结。     

He-McKellar-Wilkens Effect in Noncommutative Space

The He-McKellar-Wilkens （HMW） effect in non-commutative （NC） space is studied. By solving the Dirac equations on NC space, we obtain topological HMW phase in NC space where the additional terms related to the space non-commutativity are given explicitly.     

顶端ZnO纳米结构对GaN基LED光提取效率的影响

为了提高GaN基蓝光LED的光提取效率,本文建立了LED顶面分别铺设ZnO纳米柱和纳米锥结构的两种模型,利用时域有限差分法对两种模型进行仿真并对结果进行了比较.仿真结果表明,ZnO纳米结构的各项几何结构参量(包括排列周期P、高度L、宽度W以及斜率k等),对LED顶端光提取效率影响显著.仿真分别得到了两种结构的最佳模型,通过比较,LED顶面纳米柱和纳米锥结构对光提取效率的提高效果相近,其最佳提取效率分别增强至无任何结构时的2.5倍和2.3倍.同时,通过对各项参量扫描获得的对光提取效率的变化曲线进行了分析,并给出了相应相应的理论解释.这些模型优化和理论分析对实际的高性能GaN基LED的设计制造有着指导意义.     

非对易相空间中角动量的分裂

非对易空间效应是一种在弦尺度下出现的物理效应. 本文首先介绍了在Schwinger表象中角动量的3个分量用产生--消灭算符的表示形式, 接着讨论了非对易相空间的量子力学代数; 然后用对易空间谐振子的产生-消灭算符表示出了在非对易情况下的角动量; 最后讨论了非对易相空间中角动量的分裂.     

非对易相空间中各向同性谐振子的能级分裂

非对易空间的效应是出现在弦尺度下的一种物理效应. 本文介绍了量子力学非对易空间的代数关系; 讨论了非对易相空间中服从玻色-爱因斯坦统计的粒子的连续性条件, 最后给出了非对易相平面和非对易相空间中的线性谐振子的能级分裂.     

Investigation of the characteristics of GIDL current in 90nm CMOS technology

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.     

运动Dyon粒子双矢势场方程的格林函数解

首先回顾了有磁荷(或等效磁荷)存在的情况下电磁场双四维势的描述方法，给出了场强与双四维势的关系以及具有电磁对偶对称性的Maxwell方程；利用Green函数法求出了场方程具有Lorentz变换协变性的推迟解；最后给出了广义李纳-魏谢尔势的表述形式.     

Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

Noncommutative Quantum Hall Effect of Bilayer Systems

In this paper we study the bilayer quantum Hall （QH） effect on a noncommutative phase space （NCPS）. By using perturbation theory, we calculate the energy spectrum, eigenfunction, Hall current, and Hall conductivity of the bilayer QH system, and express them in terms of noncommutative parameters θ and θ^-, respectively. In our calculation, we assume that these parameters vary from laver to laver.     

二维光子晶体负折射现象条件及特性研究

结合光子晶体带隙图和等频率线图分析了二维光子晶体中出现负折射现象的条件,得出了负折射现象出现的频率范围.采用有限时域差分法模拟了光在光子晶体界面和内部的传输行为,验证了以上理论所给出的负折射出现的频段,观察到了明显的负折射现象.比较了不同介质、不同晶格结构光子晶体中不同频率的负折射行为.提出一种新结构的六角型二维三角晶格光子晶体分光镜的模型.