Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.     

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters,such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition,using an in-plane grazing incidence x-ray diffraction technique.The results are analysed and compared with a complementary out-of-plane xray diffraction technique.The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method.The method for directly determining the in-plane lattice parameters of the GaN layers is also presented.Combined with the biaxial strain model,it derives the lattice parameters corresponding to fully relaxed GaN films.The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established,reaching to a maximum level of-0.89 GPa.     

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition(MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH_3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film.These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately,leading to the different variation behaviors of resistivity for HT- and LT-grown ones.     

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW.     

含盐二元素的等压气液平衡研究

本文用改进的Rose分别测定了在750mmHg压力下的丙酮-甲醇-NaI体系和700mmHg压力下的异丙醇-水-LiCl, CaCl2, NH4Cl, (CH3)4NCl体系的气液平衡数据。当双液系组成固定时, 盐的浓度与沸点之间存在线性关系, 与热力学导出的线性关系基本相符。     

纳米尺度点接触的实验研究

由交叉微米线构成了T形结构,并测量了Pt-Pt和Pt-Au节点的接触热阻和接触电阻。分析表明,增大接触点长度与宽度的比值,线接触模型和椭圆接触模型计算得到的接触热阻的差别逐渐减小,当比值超过20时,椭圆接触模型不再适用。测量得到的接触热阻随温度变化不明显,而接触电阻随温度升高而增大。由于存在表面绝缘层,接触热阻将远大于Wiedemann-Franz定律的预测值。考虑Kundsen数的影响以后,由接触电阻计算得到的金属接触点尺寸近似与温度无关。     

基于新直觉模糊相似度的大规模群决策方法

研究了群体规模较大情况下基于直觉模糊评价信息的决策方法。提出一种新的直觉模糊相似度公式,研究了一种新的直觉模糊聚类方法,设计了一种基于新的聚类方法的核心决策者权重确定方法。实例分析说明了该方法的合理性和可行性。     

突发事件应急处置团队的双阶段匹配优选方法

针对突发事件专家团队的遴选组建问题,提出了基于“应急任务—核心领导—团队成员”的双阶段匹配优化模型。首先,针对匹配评价参数语言信息的模糊性和随机性,建立基于正态云模型的转换框架,提出了考虑正态云距离的匹配满意度表征方法;其次,根据“个人-团队”理论建立专业覆盖、能力互补和一致性等团队匹配原则,提出了基于应急任务的“核心领导”匹配优选模型和基于“核心领导”和“团队成员”匹配优选模型,形成联动的双阶段优化模型。最后,以航班飞行航空器起火应急救援事件为案例,分析该方法的有效性和可行性。     

H2载气流量对AlN缓冲层生长的影响

在Si(111)衬底上用金属有机化学气相沉积(MOCVD)设备生长了AlN和GaN薄膜。采用高分辨X射线衍射、椭圆偏振光谱仪和原子力显微镜研究了AlN缓冲层生长时的载气(H2)流量变化对GaN外延层的影响。椭圆偏振仪测试表明:相同生长时间内AlN的厚度随着H2流量的增加而增加,即H2流量增加会导致AlN生长速率的提高。原子力显微镜测试表明:随着H2流量的增加,AlN表面粗糙度也呈上升趋势。XRD测试表明:随着AlN生长时的H2流量的增加,GaN的(0002)和(1012)峰值半宽增大,即螺型穿透位错密度和刃型穿透位错密度增加。可能是由于AlN缓冲层的表面形貌较差,导致GaN的晶体质量有所下降。实验结果表明:采用较低的H2流量生长AlN缓冲层可以控制AlN的生长速率,在一定程度上有助于提高GaN的晶体质量。     

邻氯硝基苯在Pd/C催化剂上加氢反应机理及添加Cu对邻氯苯胺选择性的影响

本文研究了邻氯硝基苯在5%Pd/C催化剂上加氢为邻氯苯胺和苯胺的反应机理。结果表明,在常压下,邻氯苯胺和苯胺的选择性分别为~70%和~30%,且不随转化率增加而变化。在加压(1.0 Mpa)条件下,也有类似规律。因此,说明邻氯苯胺和苯胺分别是两个平行反应的产物。通过测定该反应各步骤的初始反应速率,进一步证实了这一结论。在认识反应机理的基础上,制备出可有效抑制脱氯的Cu-Pd/C双金属催化剂,在不加脱氯抑制剂的情况下,可使邻氯硝基苯加氢制备邻氯苯胺的选择性提高到96%以上。