两个初等不等式

在教学中,关于二项式级数在收敛区间端点的收敛性,是一个较困难的问题。有的教材,对此置之不理,有的则要借助于超越几何级数来解决。 本文,将文献中的不等式     

OLIGOMERIZATION AND POLYMERIZATION OF PERFLUOROALKENES AND PERFLUOROALKYNES CATALYZED BY π-BIS (ARENE) CHROMIUM (0) COMPLEXES

Oligomerization of perfluoropropylene catalyzed by π-bis-(arene)chromium(0) gave two dimers(ⅡA and ⅡB), two trimers(ⅢA and ⅢB) and two defluorotrimers(ⅣA and ⅣB). The last were found to arise from hydrogenation of ⅢB followed by dehydrofluorination. Hydrogen fluoride evolved was added to perfluoropropylene to give 2-hydroheptafluoropropane. By using labeling technique, hydrogen was found to arise from ligand presumably through π-σ rearrangement, A possible mechanism was proposed, π-Bis(benzene)chromium(0) was able to catalyze the polymerization of perfluorobut-2-yne to form its polymer, a white powder. The same catalyst could catalyze copolymerization of CF_3CCCF_3 and CF3CFCF_2 to give solid copolymer. Three perfluoro-2-alkynenitriles (CF_3CC-CN,C_2F_5CC-CN, n-C_3F_7CC-CN) were successfully synthesized by intramolecular Wittig reaction and one of them, i.e, C_2F_5C CCN was polymerized catalytically by π-bis(benzene)chromium(0) to give its polymer. a black powder.     

假想分子与化学平衡

为了简化在求算有化学反应的气态物质的宏观热力学性质时所用到的概念和方法,本文引进“假想分子”的概念,导出了其化学势μ和绝对活度z=e~(μ/kT)的表达式。这样即可对化学平衡作出全新的物理解释,证明了化学平衡时,反应物的假想分子与生成物的假想分子可用统一的玻尔兹曼分布来表示,从而把有化学反应与无化学反应的体系统一了起来,并且简化了化学平衡时各能态上粒子数的计算方法。     

任意形状弹性厚壳的运动方程

本文以位移和转角作为独立变量,运用变分原理推演出任意形状弹性厚壳的运动方程.该方程除了包含通常的薄膜内力项和内矩项外,还反映了横向剪切影响、转动惯性效应和横向挤压影响.本文提供的方程还可以蜕化为由V.Z.Vlasov提出的厚壳方程,I.Mirsky和G.Herrmann提出的厚圆柱壳方程,R.D.Mindlin提出的厚板方程。     

35MeV/u36Ar+124Sn反应中类弹产物的同位素分布特性

测量了35MeV/u³⁶Ar+¹²⁴Sn反应中5.3°处类弹产物的同位素分布,观察到随着出射动能的增加,产物的平均中质比逐渐减小而接近弹核的平均中质比.同位旋相关的量子分子动力学计算表明,随着反应时间的增加,类弹产物的平均出射动能逐渐减小而平均N/Z值则逐渐增大.另外,碰撞参数也影响类弹产物的同位素组成:随着碰撞参数的减小,类弹产物的平均N/Z值减小.     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

CsI(Tl)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(Tl)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究. 结果表明, CsI(Tl)晶体光产额在室温范围内随着温度的增加而增加, 在－2℃—8℃温度范围内的平均温度系数为0.67%/℃, 在8℃—25℃温度范围内的平均温度系数为0.33%/℃. 而对所使用的APD, 其增益在室温范围内的温度系数为－3.68%℃(工作电压400V). APD结合CsI(Tl)晶体在室温下对¹³⁷Cs的662keV γ射线的能量分辨可达5.1%.     

电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Strongly Correlated Effect in TiS2

The thermoelectric compound TiS2 is studied by using the full-potential linearized augmented plane-wave method on the density functional theory with the generalized gradient approximation （GGA） as well as the on-site Coulomb interaction correction （＋U）. The Seebeck coefficient of TiS2 is calculated based on the electronic structure obtained within the GGA under the consideration of the on-site Coulomb interaction. The calculated Seebeck coefficient at 300K shows that Coulomb interaction U in the range of 4.97-5.42eV is important to reproduce the experimental data. The obtained energy gap Eg around 0.05 eV indicates that TiS2 is an indirect narrow-gap semiconductor.