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Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films 下载免费PDF全文
Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300℃. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 ×10^-4 Ω·cm is obtained from the film annealed at 400℃in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature. 相似文献
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理论上分析了CIDC1816型直耦增强数码相机在采集静态图像过程中像增强器阴极电压衰减时间对电子光学系统横向位移的影响.实验证明了阴极电压衰减时间会对荧光屏亮度衰减时间产生影响.提出了利用电子开关的高速响应特性来减小阴极电压衰减时间,以改善该类型相机时间响应特性的方法.研究表明,当外界光照条件大于10-4 lx时,阴极电压衰减时间由80~130ms减小到50~60ns,电子光学系统的横向位移受阴极电压衰减特性的影响减小,荧光屏亮度衰减时间由12~26ms减小到了3~4ms.研究结果证明了该方法能够有效地减小像增强器阴极电压衰减时间和荧光屏亮度衰减时间,为提高该类型相机静态成像质量提供参考. 相似文献
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