不同退火温度下晶化硅薄膜的电学输运性质

采用等离子体化学气相沉积技术制备氢化非晶硅薄膜,经过不同温度下的热退火处理,使薄膜由非晶结构向晶化结构转变,得到含有纳米晶粒的晶化硅薄膜.在晶化过程中,采用Raman技术对样品的结构进行表征.通过变温电导率的测试,对薄膜的电学输运性质进行了分析.研究结果表明：退火温度为700 ℃时,样品中开始有纳米晶形成,随着退火温度的增加,样品的晶化比增大,在1000 ℃时,薄膜的晶化比达到90%以上.在700 ℃退火时,薄膜中晶化成分较低,载流子的传输特性主要受到与硅悬挂键有关的缺陷态影响,表现为带尾定域态的跳跃电导 关键词： 氢化非晶硅 退火 纳米硅 电输运     

一种基于莫顿码及镜像编码的平衡八叉树模型

在接触分析和动画模拟等网格规模庞大、需要实时更新的应用场景下,普遍采用莫顿码实现包围盒层次树结构的快速重构。但现有的层次树由于结构平衡性差,普遍存在搜索效率不稳定的问题,为此本文在莫顿码法的基础上提出了一种兼顾构建与搜索效率的平衡八叉树模型BOT树(Balanced Octree)。设计了镜像编码来保证树的上层节点均有8个分支,且同层树节点所含三角面数之差不超过1。实际算例表明,BOT树与现有模型OIOT树在CUDA并行框架下对比,构建加速比最高可达1.29×,且网格规模越大,BOT树构建效率的优势越明显。同时,与OIOT树相比BOT树的筛除率更高,在凸体接触和边缘接触算例中加速比分别达到1.13×和1.06×。     

带隙可调的CdS纳米晶薄膜的化学浴制备和光学性质

CdS是一种直接带隙半导体,室温下其禁带宽度约为2.4eV,是一种良好的太阳能电池窗口层材料和过渡层材料。分别以CdCl2和(NH2)2CS作为镉源和硫源,用化学淀积法在玻璃上生长CdS纳米薄膜,考察了Cd2 浓度、淀积温度、淀积时间以及溶液pH值对CdS成膜的影响。紫外可见光吸收谱和荧光光谱的结果表明,在样品的制备过程中,通过改变反应条件如化学试剂的浓度、加热温度、加热时间等来控制薄膜中颗粒的尺寸大小,随着反应温度的逐渐降低或反应时间的减少等可以使得到的CdS纳米晶薄膜中晶粒尺寸逐渐减小,带隙增加;镉离子浓度越小或氨水浓度越大,所得CdS纳米晶薄膜带隙越大。     

Photoluminescence from Er3+ ion and SnO2 nanocrystal co-doped silica thin films

Er3+ ions embedded in silica thin films co-doped by SnO2 nanocrystals are fabricated by sol-gel and spin coating methods. Uniformly distributed 4-nm SnO2 nanocrystals are fabricated, and the nanocrystals showed tetragonal rutile crystalline structures confirmed by transmission electron microscope and X-ray diffraction measurements. A strong characteristic emission located at 1.54 μm from the Er3+ ions is identified, and the influences of Sn doping concentrations on photoluminescence properties are systematically evaluated. The emission at 1.54 μm from Er3+ ions is enhanced by more than three orders of magnitude, which can be attributed to the effective energy transfer from the defect states of SnO 2 nanocrystals to nearby Er3+ ions, as revealed by the selective excitation experiments.     

The luminescence enhancement of Eu3+ ion and SnO2 nanocrystal co-doped solben gel SiO2 films

SnO₂ nanocrystal and rare-earth Eu³⁺ ion co-doped SiO₂ thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO₂ nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the ⁵D₀-⁷F₂ transitions of the Eu³⁺ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO₂ nanocrystals to nearby Eu³⁺ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu³⁺ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu³⁺ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements.     

SiO_x(x=1.3)薄膜的优化阻变特性与退火温度的关系探究

采用电子束蒸发技术在Si衬底上制备了亚氧化硅SiOx(x=1.3)薄膜,研究了不同温度热退火处理的SiOx薄膜作为阻变层的ITO/SiOx/Si/Al结构的阻变特性.研究发现,在电极尺寸相同的条件下,随着退火温度的增加,该结构的高低阻态比显著提高,最高可达109.X射线光电子能谱和电子顺磁共振能谱的分析表明,不同退火温度下形成的不同价态的硅悬挂键是低阻态下细丝通道的主要来源.椭偏仪的测试结果表明,经过热退火处理的SiOx薄膜折射率的增大是导致高阻态下器件电阻增大的原因.     

双栅调控的硅量子线中的库仑振荡效应

基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛. 关键词： 库仑振荡 单电子效应 硅量子线     

nc-Si/SiO2多层膜的制备及蓝光发射

在等离子体增强化学气相淀积(PECVD)系统中，采用a-Si∶H层淀积与原位等离子体氧化相结合的逐层生长的方法成功制备出a-Si∶H/SiO2多层膜 (ML)；利用限制性结晶原理通过两步退火处理使a-Si∶H层晶化获得尺寸可控的nc-Si/SiO2 ML，并观察到室温下的蓝光发射；结合Raman散射和剖面透射电子显微镜技术分析了nc-Si/SiO2 ML的结构特性；通过对晶化样品光致发光谱和紫外-可见光吸收谱的研究，探讨了蓝光发射的起源. 关键词： 纳米硅多层膜 等离子体氧化 蓝光发射 热退火     

Strong Electron Field Emission from Nano-CdS Modified Porous Silicon

A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 Vim and the emission current reaches about 20μA/cm^2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.     

RHIC束流能量扫描实验中正反粒子椭圆流的平均场势效应（英文）

最近,STAR合作体在相对论重离子对撞机的束流能量扫描实验中观测到了正反粒子的椭圆流劈裂。基于输运模型,发现丰重子介质中正反粒子平均场势的不同可以解释其椭圆流的劈裂。利用Nambu-Jona-Lasinio模型描述相对论重离子碰撞的部分子相,发现实验中正反粒子的相对椭圆流劈裂可以用来约束该模型中夸克矢量相互作用的耦合系数。这一发现对确定QCD相图的临界点位置和理解整个QCD的相结构有重要意义。