Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas （2DEG） is very sensitive to neutrons. At a low fluence of 6.13 × 10^15 cm^-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 × 10^16 cm^-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit （product of ns×μ ） of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns × μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.     

第十四届全国波谱学学术会议纪要

由中国物理学会波谱学专业委员会主办,西安近代化学研究所、陕西省分析测试协会等共同承办的第十四届全国波谱学学术会议于2006年10月11日至13日在古都西安举行.参加本届会议的有来自内地及港台地区以及海外的近200位正式代表,以大会报告、分组报告和墙报形式交流的论文近170篇     

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.     

分光光度法研究水-乙醇体系析相萃取分离和富集PdBr_4~(2-)

用可见分光光度法研究了水-乙醇体系析相萃取分离和富集PdBr42-的行为及与一些金属离子分离的条件.结果表明,(NH4)2SO4能使乙醇的水溶液分成两相,在分相过程中,Pd(Ⅱ)与KBr生成的PdBr42-与质子化乙醇(C2H5OH2+)形成的缔合物[PdBr42-][C2H5OH2+]2能被乙醇相完全萃取.当乙醇、KBr和(NH4)2SO4分别为30%、6.0×10-3 mol/,L、0.3 g/mL,pH 3时,PdBr42-的萃取率达到98.6%以上,Fe(Ⅲ),Al(Ⅲ),Cr(Ⅲ),Ag(Ⅰ),Cu(Ⅱ),Ni(Ⅱ),Zn(Ⅱ),Co(Ⅱ),Mn(Ⅱ),V(Ⅴ),U(Ⅵ),Pb(Ⅱ),Ru(Ⅲ),Rh(Ⅲ)和Hg(Ⅱ)基本不被萃取,实现了Pd(Ⅱ)与上述金属离子的分离.     

蒙脱土复膜胶的制备及流变行为

本文采用有机蒙脱土浸泡单体,通过种子乳液聚合制备了蒙脱土占单体含量1．5％的纳米纸塑复膜胶,并对其流变性进行研究。发现了它与一般的普通复膜胶相比,其表观粘度(ηa)、稠度系数(K)、零剪切粘度(η0)、粘流活化能(Ea)增加,特性指数(n)、乳胶粒径减小。     

(±)-Pauciflorol F的全合成

首次完成了(±)-pauciflorol F 的全合成, 其中关键步骤为一步完成Heck反应和烯丙羟基的氧化.     

半导体激光器巴条封装应力及评价

为了快捷而有效地检测半导体激光器的封装应力,设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数,并利用有限元软件模拟,通过半导体能带与应力理论,说明偏振度与封装应力的影响关系。实验表明,巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算,封装应力为141.92 MPa,偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度,可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。     

Enhancement of Bichromatic High-Order Harmonic Generation by a Strong Laser Field and Its Third Harmonic

We investigate high-order harmonic generation （HHG） in a linearly polarized bichromatic field composed of a fundamental laser field with frequency w and an additional laser field with frequency 3w. The numerical results show that it is possible to enhance the intensity of most high harmonics in orders of magnitude. A most striking feature in the enhancement is that the intensity of several special high harmonics is practically impaired as compared with that in the monochromatic case. The qualitative explanation to the great enhancement is that the additional high-frequency field can provide new transition paths for electrons to reach the continuum. The relative phase between the fundamental field and its third harmonic field also affects the intensity of high-order harmonics near the cutoff efficiently.     

基于双目序列图像的测距定位与自车速度估计

为了确定车辆在行驶过程中的相对位置与速度,提出一种基于双目序列图像的实时测距定位及自车速度估计方法。该方法利用车载双目视觉传感器采集周围环境的序列图像,并对同一时刻的左右图像进行基于SURF(speeded up robust features)特征的立体匹配,以获取环境特征点的景深,实现车辆测距定位;同时又对相邻两帧图像进行基于SURF特征的跟踪匹配,并通过对应匹配点在相邻两帧摄像机坐标系下的三维坐标,计算出摄像机坐标系在车辆运动前后的变换参数,根据变换参数估算出车辆的行驶速度。模拟实验表明,该方法具有良好的可行性,速度计算结果比较稳定,平均误差均在6%以内。     

耦合映射混沌同步系统在加性噪声中的筛形域性态

由于实际系统中噪声不可避免，噪声使得同步混沌吸引子A变成具有一定生存时间<τ>的准稳态吸引子A′.以加性噪声作用下的二维耦合映射混沌同步系统为例，给定系统实验时间长 度T，解析发现：仅当<τ>>2T时准稳态同步混沌吸引子的筛形吸引域才可被定性观察到；而 当<τ><2T时则不复存在，此时，根据原无噪声时的筛形吸引域特征的不同，筛形域不仅可 以转变成时变筛形结构，还可以转变成分形结构.同时利用数值模拟作了进一步验证.该结果 对于二维耦合映射混沌同步系统具有普遍意义. 关键词： 混沌同步 筛形吸引域 瞬态混沌 耦合映射 加性噪声