CeO2基氧化物储氧材料研究(Ⅱ)添加贵金属改进储氧能力

在高温老化的复合氧化物CZO和CZYO体系中,添加微量贵金属(Pt,Pd,Rh)明显提高还原速度并增加OSC.含贵金属的CZO或CZYO的OSC与其组成和贵金属的种类有关.较长时间(10 h)老化后含Pd的CZO3样品的OSC明显下降,CZYO2样品的OSC略有下降.含Pt/Rh,10 h老化后CZO3和CZY02样品的OSC均高于相应同条件老化的含Pd样品的OSC.     

Mg/Cd共掺杂ZnO电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,研究了Mg/Cd(不同的Cd浓度)共掺杂ZnO的电子结构和光学性质.研究表明:Mg/Cd共掺杂ZnO,体系的晶胞尺寸变大,但结构稳定.当Mg/Cd为1:1时,吸收边略微发生蓝移.随Cd的掺杂浓度增加,导带部分逐渐下移,禁带宽度变窄,出现红移现象.除此之外体系的吸收率和反射率也减小.说明Mg/Cd共掺杂ZnO,不仅使得体系光学谱丰富,而且透射性增强.这对实验中制备出高透射率的材料具有一定的指导意义.     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

High accuracy calculation of the hydrogen negative ion in strong magnetic fields

Using a full configuration-interaction method with Hylleraas-Gaussian basis function, this paper investigates the 1¹0⁺, 1¹(–1)⁺ and 1¹(–2)⁺ states of the hydrogen negative ion in strong magnetic fields. The total energies, electron detachment energies and derivatives of the total energy with respect to the magnetic field are presented as functions of magnetic field over a wide range of field strengths. Compared with the available theoretical data, the accuracy for the energies is enhanced significantly. The field regimes 3 < γ < 4 and 0.02 < γ < 0.05, in which the 1¹(–1)⁺ and 1¹(–2)⁺ states start to become bound, respectively, are also determined based on the calculated electron detachment energies.     

The isolated critical value phenomenon in local－global riddling bifurcation

A chaotic synchronized system of two coupled skew tent maps is discussed in this paper. The locally and globally riddled basins of the chaotic synchronized attractor are studied. It is found that there is a novel phenomenon in the local－global riddling bifurcation of the attractive basin of the chaotic synchronized attractor in some specific coupling intervals. The coupling parameter corresponding to the locally riddled basin has a single value which is embedded in the coupling parameter interval corresponding to the globally riddled basin, just like a breakpoint. Also, there is no relation between this phenomenon and the form of the chaotic synchronized attractor. This phenomenon is found analytically. We also try to explain it in a physical sense. It may be that the chaotic synchronized attractor is in the critical state, as it is infinitely close to the boundary of its attractive basin. We conjecture that this isolated critical value phenomenon will be common in a system with a chaotic attractor in the critical state, in spite of the system being discrete or differential.     

Geometric quantities of lower doubly excited bound states of helium

Expectation values of single electron and interelectronic geometric quantities such as $\langle r\rangle$, $\langle r_{12}\rangle$, $\langle r_<\rangle$, $\langle r_>\rangle$, $\langle \cos\theta_{12}\rangle$ and $\langle \theta_{12}\rangle$ are calculated for doubly excited $2{\rm p}n{\rm p}\,{}^1P^{\,\rm e}\,(3\leq n\leq5),\, 2{\rm p}n{\rm p}\,{}^3\!P^{\,\rm e}\,(2\leq n\leq5)$ and $2{\rm p}n{\rm d}\,{}^{1,3}D^{\,\rm o}\,(3\leq n\leq5)$ states of helium using Hylleraas-$B$-spline basis set. The energy levels converge to at least 10 significant digits in our calculations. The extrapolated values of geometric quantities except for $\langle \theta_{12}\rangle$ reach 10 significant digits as well; $\langle \theta_{12}\rangle$ reaches at least 7 significant digits using a multipole expansion approach. Our results provide a precise reference for future research.     

(一)-△~(9(12))-CapneUene类的合成中间体——光学活性5-甲基-8-羟基双环[3,3,0]2一辛酮的不对称合成研究

通过手性硝基烯胺(4)与α-甲基-δ-戊内酯烯醇锌盐发生加成消除反应解决了倍半萜Capnellene类合成中构筑不对称季碳这个难题,对映体过量(e. e. )为94％。由L-脯氨酸经14步实现了(一)-△~(9(12))-Capnellene类的合成中间体——光学活性5-甲基-8-羟基双环[3 3,0]-2-辛酮(13)的对映选择合成。     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

关于数列{2~n}

易知等比数列{2~n}前n项的和为S_n=a_(n+1)-2。对于这个关系式,我们有三点联想。 (一)简便求和。若a_5=32,则S_4=30。 (二)判定由关系式a_(n+1)=rS_n+S给出的数列是否为等比数列。事实上a_(n+1)=rS_n+S (1) a~n=rS_(n-1)+S (2) (1)-(2)得a_(n+1)-a_n=r(s_n-S_(n-1))=ra_n a_(n+1)/a_n=r+ 因此,r≠-1,a_1=S,{a_n}为等比数列。 (三)等比数列前n项和公式的新法推导。