脉冲强磁场电路系统的最佳设计——理论和方法

本文综合考虑了线圈、电源和电路等各种因素,尤其考虑了热效应,建立一个设计电容器放电型脉冲磁体的理论方法。只要给出设计要求:B_0,a_1,b,t_m,σ,λ,V,就可以用本文给出的方法求出磁体的最佳结构参数和电路设计参数(i_0,a_2,L,C,N,l,s和I_(max))。 理论指出,对实验上得到的受力密度σ=1.25×10~9N/m~2,合理地设计磁体,磁场可达近百万高斯,而且能源(电容c)可以大大降低。     

STRUCTURE AND PROPERTIES OF THE La-DOPED Bi-2201 SYSTEM

In this article, the influence of La substitution for Sr on structure and physi-cal properties of the 2201 phase is studied. First, the crystal microstructure of the Bi_2.1Sr_1.9-xLa_xCuO_y (0≤x≤1.0) is characterized by means of X-ray diffraction and electron diffraction analyses, it is discovered that in the La-doped 2201 system with increasing La content the 2201 phase undergoes tetragnoal-orthorhombic-monoclinic structural transition. With this phase transition, the modulation vector of the 2201 phase transforms from incommensurate to commensurate, and the period of the mod- ulation wave decreases. Secondly, the superconductivity of this system is analyzed systematically. The results of the resistivity measurement show that the appropriate amount of La doping can raise the superconducting transition temperature (T_c) of the 2201 phase, with x=0.2, T_c reaches as high as 25K. However the excessive doping of La (x≥0.3) leads the 2201 phase to transit from metal to insulator and the su-perconductivity disappears. The measurement of thermoelectric power (TEP) of this system shows that with increasing La content the TEP value also increases gradu-ally. But the interesting point is that the transition from positive to negative in TEP occurs for x=0.2 sample. In addition, the electronic structure and oxygen content of this system are also studied. Based on these, we analyze the relation between the microstructure, electronic structure of the La-doped 2201 phase and its superconduc-tivity, indicating that the type of element substitution with higher valence, together with the microstructural distortion induced by the substitution affects the electronic states of Cu 3d seriously, that is, changes the degree of coulomb correlation of Cu 3d electrons, thus resulting in the transition of the type of carrier of this system and the decrease of hole carrier concentration, as well as the corresponding variation of the superconductivity of La-doped 2201 phase.     

低温凝聚InSb膜相变过程中的时间效应和超导电性

本文研究了低温凝聚InSb膜相变过程中出现的时间效应和超导电性,获得了几个重要结果:(a)低温凝聚InSb膜从发生第一次电导跃变以后到第二次电导跃变之前,样品处于同一非晶金属态,并且具有相同的超导转变温度T_c;(b)T_c和退火温度T_a的关系十分类似于电导随T_a的变化关系;(c)随着第二次电导峰值后的电导下降,在某些特殊的相变区R(T)超导转变中,样品由完全的超导电性逐渐过渡到部分的超导电性;(d)相变过程中存在显著的时 关键词：     

强耦合超导薄膜的临界场

关键词：     

超导弱连接的电压磁场关系(Ⅰ)

本文理论计算了恒流源的RSJ模型下超导弱连接的量子衍射及其相应双结SQUID的量子干涉。对双结SQUID给出了电压直流分量随磁场等幅振荡的解析关系。 关键词：     

亚稳金属型InSb膜的电导和其超导相变反常的机理

本文用X光衍射测量了低温凝聚InSb膜相变过程中的结构,并同时测得在该结构下相应的电导。X光衍射指出,具有最高T_c的结构是六方晶系InSb相,它相应于125 kbar下的InSb结构。本文提出一个类半导体相和亚稳金属相的混合态导电模型,按此模型作了理论计算,理论较好地符合实验测得的电导温度关系并较好地解释了超导相交的反常。我们还从实验上测得亚稳金属相InSb膜和非晶态半导体InSb迭层膜的行为,解释了InSb膜亚稳中间相的T_c。     

高T_c氧化物Bi_(2-x)Pb_xSr_2Ca_2Cu_3O_y大块超导体的磁化和H_(c1)

高T_c氧化物 Bi_(2-x)Pb_xSr_2Ca_2Cu_3O_y(x=0.2,0.3,0.4,0.5)大块超导体的 Meissner 效应表明存在110K 和85K 两个超导相,并且以110K 相为主,抗磁转变起始于103K 附近.不同样品在77.3K 的磁化实验表明,当 x≤0.3时,H_(Cl)≈28Oe,当 x>0.3时,H_(cl)=25Oe.x=0.3的样品在不同温度下的磁化实验结果表明,在 T=77.3—95K 之间,H_(Cl)与 T 成线性关系,且 dH_(Cl)/dT=-1.07Oe/K.两个超导相的存在导致磁化曲线峰的拉宽,且拉宽程度与85K 相所占的比例有关.     

（La_（1－x）Sr_x）_2CuO_4高T_c单晶样品中Sr对其性质的影响

实验上研究了（Ｌａ（１－ｘ）Ｓｒｘ）２ＣｕＯ４高Ｔｃ库晶样品的ｃ－轴正常态电阻同温度的关系以及Ｔｃ附近ｃ－轴电阻作为磁场和磁场取向的函数．结果表明，（１）随着Ｓｒ含量的增加，ｃ－轴正常态电阻从半导体行为变为金属行为，和（２）固有的各向异性随Ｓｒ含量的增加而逐渐变弱，这些意味着Ｓｒ掺杂在Ｌａ基系统中有利于Ｃｕ－Ｏ面间耦合的改善．     

高J＿cTl系2223相银包套带材的磁通钉扎和耗散

测量了Ｔｌ系２２２３相银包套超导带（Ｊ＿ｃ＝１．５×１０￣４Ａ＊ｃｍ￣（－２），７７Ｋ，０Ｔ）在０－０．８Ｔ磁场下电阻转变展宽，实验结果引用热激活磁通蠕动模型加以解释。磁场平行于带面（Ｈａｂ面）和磁场垂直于带面（ＨＪ⊥ａｂ面）两种情况下，激活能与磁场之间满足幂指数关系：Ｕ＿（０）＝０．２１，其中Ｈ的单位为ｋＧ。对Ｈａｂ面，ＨＩ时出现的与宏观洛仑兹力无关的耗散进行了讨论。