Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application

We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.     

准连续光抽运光子晶体光纤产生超连续谱中的调制不稳定性(英文)

报道了应用准连续光抽运光子晶体光纤产生超连续谱时的一种现象,并根据调制不稳定和数值解薛定谔方程证明此现象为调制不稳定性.在实验中发现有两个波峰,与中心波长之间的距离分别为27 .08 nm和32 .72 nm,经过对比和分析数值结算和实验结果非常吻合,说明调制不稳定性在准连续光抽运光子晶体光纤产生超连续谱过程中起着重要的作用.     

粘性依赖于密度的可压缩Navier-Stokes方程

The global existence of solutions to the equations of one-dimensional compressible flow with density-dependent viscosity is proved. Specifically,the assumptions on initial data are that the modulo constant is stated at x=∞ ＋and x=-∞ ,which may be different ,the density and velocity are in L^z ,and the density is bounded above and below away from zero. The results also show that even under these conditions, neither vacuum states nor concentration states can be formed in finite time.     

亚纳秒光脉冲抽运光子晶体光纤产生的瓦级超连续谱

研究了亚纳秒脉冲抽运光子晶体光纤产生高功率超连续谱的机理.采用掺镱锁模光纤激光器产生的脉宽570ps光脉冲,抽运1.8m光子晶体光纤,得到了平均功率为1.15W、光谱覆盖范围为750nm的超连续谱.通过实验和模拟结果的对比和分析,证实了亚纳秒脉冲抽运1.8m PCF产生超连续谱时,调制不稳定性效应起了重要作用.在研究了不同抽运功率下输出的超连续谱变化后,发现随着抽运功率的提高,输出功率也更高且超连续谱覆盖波段也更宽,在瓦级输出功率下依然未达到饱和展宽状态,还有进一步提高功率和展宽光谱的空间.     

Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor

In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2～10^3, which is sufficiently large for application in memory devices.     

Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260hm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as web as physical and electrical properties of GelSb2 Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100 ns. Both the values are larger than those of the Ge2Sb2 Tesbased ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.     

Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency

We report on the fabrication and characterization of a ZnO-based film-bulk acoustic-resonance device utilized as biosensor. The device has a multilayer structure which consists of piezoelectric element (Au/ZnO/Pt) and a Bragg-reflection-layer acoustic isolation consisting of multilayers of ZnO/Pt. Dielectric measurements have revealed that the device has a very high working frequency (up to -3.1 GHz), meaning that the device may have a higher sensitivity than the devices reported in the literature.     

横向交变载荷下TiCN/MoS2涂层螺栓的防松性能研究

基于自主设计的螺栓连接振动试验装置,系统研究了横向交变载荷下TiCN/MoS₂涂层螺栓分别与TiCN/MoS₂涂层螺母和无涂层螺母配合时连接结构的松动行为,并利用体式显微镜(OM)、扫描电子显微镜(SEM)、电子能谱仪(EDX)和白光干涉仪等微观分析设备对试验后的螺纹表面进行损伤分析,深入讨论其磨损机理. 结果表明:在相同试验条件下,TiCN/MoS₂涂层螺栓比无涂层螺栓螺纹表面的损伤轻微,连接结构的松动程度更低;与无涂层螺栓螺纹根部相同等效应力状态下,TiCN/MoS₂涂层螺栓连接结构的预紧力可提高约10%,螺纹表面的损伤减轻,同时连接结构的松动程度进一步降低;TiCN/MoS₂涂层螺栓螺纹表面的主要磨损机制为疲劳磨损.      

Low-repetition rate,nanosecond,high-power pulse amplifier system based on Yb-doped rod-type fiber

We report a nanosecond-pulse amplification system based on an Yb-doped,100-μm core,rod-type photonic crystal fiber.Up to 10 W of average power with pulse energy of 1 mJ and peak power of 450 kW is obtained at the repetition rate of 10 kHz.The high-power nanosecond pulse has a good pulse shape and spectral characteristics.The usage of rod-type fibers provides a novel structure for nanosecond pulse amplification.     

有关概率密度函数的注记

指出在概率统计教学中有关密度函数的一些需要补充说明的问题,同时对密度函数的一条性质作出更加严格的证明．