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181.
Passive Q-Switching Modelocked Yb^3+ -Doped Fibre Laser with GaAs Absorber Grown at Low Temperature
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GaAs absorber was grown at low temperature (550℃) by metal organic chemical vapour deposition (MOCVD)and was used as an output coupler with which we realized Q-switching modelocked yb^3 -doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 31μs. The modelocking threshold is 4.27 W and the highest average output pulse power is 290mW. The modelocking frequency is 12 MHz. 相似文献
182.
Stable continuous-wave passive mode-locking of diode-end-pumped Nd:GdVO4 and Nd:YAG lasers with semiconductor saturable absorber mirrors (SESAMs) are reported. The comparative study shows that the Nd:GdVO4 crystal is efficient to decrease the Q-switched mode-locking tendency, and easier to continuous-wave (CW) mode lock than Nd:YAG. 相似文献
183.
184.
Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes. 相似文献
185.
We demonstrated a diode-pumped vertical external cavity surface emitting laser with simple plane-concave cavity. When the pump power at a wavelength of 811.6 nm is 1.5 W, the maximum output power is 40.4 mW at the wavelength of 1005.8 nm. The optical-optical conversion efficiency is 2.7%. . 相似文献
186.
A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW. 相似文献
187.
188.
This paper proposed a ray-tracing model for the Martinez stretcher, derived the calculation formulae for the stretcher of a grating-spherical mirror system and discussed the error for the total dispersion resulted from the spatial dispersion. The calculated results show that the error could be ignored for the beam returned to the stretcher for the second pass in the wavelength range of 750 nm and 850 nm. 相似文献
189.
190.
A compact Er:fiber ring laser operated at a fundamental repetition rate of 325 MHz is reported.Two gain fibers with opposite dispersion are employed to shorten the fiber laser cavity for high repetition rate and soliton-like pulse generation without losing gain and compactness.The spectral bandwidth of the output pulse is 24 nm and the direct pulse duration is 123 fs without extra-cavity compression,which are values near the transform-limited range. 相似文献