用国产WP_1-G型高频等离子体——一米光栅摄谱仪直接测定高纯氧化钇中十四个稀土杂质

本文采用正交设计试验法对ICP工作参数进行了最佳选择;对基体钇和共存稀土元素的光谱干扰及基体效应作了详细考察,提出了方便可行的实验校正方法;此外,加入适量的乙醇可以在一定程度上改善方法的检出限。在最佳实验条件下,本法测定稀土元素的检出限在0.0019—0.15μg/mL范围,精密度在2.6—5.3％之间。可以满足99.9—99.99％氧化钇分析的要求,可作为氧化钇生产中质量控制的有效分析方法     

丙烯聚合络合催化剂形成过程的研究

以倍半物为还原剂还原TiCl_4,经异戊醚络合处理,然后在TiCl_4己烷溶液中35℃条件下热处理,制得对丙烯聚合具有高活性和高定向度的络合催化剂。研究了制备过程中各步反应产物的组成和结构特征,并讨论了TiCl_3低温晶型转变机理。     

CTMAB存在下钪多元络合物的研究

本文系统研究了在阳离子表面活性剂存在下钪与溴邻苯三酚红及三乙烯四胺形成多元络合物的条件，测定了络合物的最大吸收波长和摩尔吸光系数，确定了络合物的组成。并初步探讨了反应机理。     

二茂铁亚胺环钯化合物－－一种新型芳基氯化汞偶联催化剂

发现在催化量二茂铁亚胺环钯化合物催化下，芳基氯化汞可在湿和条件下偶联 ，以中等或高的收率生成联芳烃。对于铑盐不能催化偶联的邻位取代苯基氯化汞和 α－基氯化汞，在此体系中亦可发生偶联。以HMPA为溶剂，在x = 0.025（摩尔分 数）化合物1或2催化下与2.0当量氯化锂存在时，得到最好的催化效果。     

2-[(卤代苯胺基)羰基]苯甲酸与Cu(Ⅱ)、Ni(Ⅱ)、Co(Ⅱ)的配合物研究

本文报道了4种2-[(卤代苯胺(?))羰基]苯甲酸与Cu(Ⅱ)、Ni(Ⅱ)、Co(Ⅱ)配合物的制备,并通过元素分析、热重分析、红外光谱和电子光谱分析以及磁化率测定对它们进行了表征.结果证明,配合物是通过羧酸根上羟基氧原子和酰胺羰基上氧原子配位成键,除Cu(Ⅱ)配合物分子为平面正方形结构外.其余均为八面体结构,只是扭曲程度不同.并对它们的配位场参数进行了计算.     

咪唑-金属配合物的合成、性质及其与DNA的作用机理

Three hexakis（imidazole）metallo complexes of Co, Cd and Ni were synthesized and spectroscopically characterized. The crystal and molecular structures have been determined by X-ray crystallography analysis. The metal ions have an octahedral geometry with the MN6 chromophore. The electrochemical experimental results indicate that both [Co（Im）6]C12·2HCl·2H2O （1） and [Ni（Im）6]C12·4H2O （3） [Im=imidazole] could interact with DNA mainly by intercalation.     

四氮大环-金属配合物与DNA作用的电化学及谱学研究

Mononuclear copper（Ⅱ）, nickel（Ⅱ） and cobalt（Ⅲ） tetracoordinate macrocyclic complexes were synthesized and spectroscopically characterized. The crystal structure of the three compounds were determined by X-ray crystallography. The electrochemical experimental results indicate that the three complexes could interact with DNA mainly by electrostatic interaction. The interaction of tetracoordinate macrocyclic cobalt（Ⅲ） complex with DNA was studied by cyclic voltammetry and UV-vis spectroscopy. The experimental results reveal that tetracoordinate macrocyc- lic cobalt（Ⅲ） complex could interact with DNA by electrostatic interaction to form a 1 ： 1 DNA association complex with a binding constant of 7.50 ×10^3 L·mol^-1.     

四阶椭圆问题有限元导数恢复技术与超收敛性

1引言有限元导数恢复技术是近年来发展起来的计算有限元导数并获得导数逼近超收敛性的一种新的后处理技术.对于一维和二维区域上的二阶椭圆边值问题,文[1,2]提出了Z-Z小片插值技术,得到了有限元导数逼近在小片恢复区域上的一阶超收敛结果和剖分节点处二阶强超收敛性;文[3,4]则建立了更为实用的小片插值恢复技术并得到与文[1,2]相平行的超收敛结果;文[5]对两点边值问题构造了一种积分形式的导数恢复公式,利用这个公式可获得剖分节点处有限元导数逼近的O(h~(2k))阶超收敛估计.本文将对一维四阶椭圆     

Influence of atomic densities on propagation property for ultrashort pulses in a two-level medium

The influence of atomic densities on the propagation property for ultrashort pulses in a two-level atom (TLA) medium is investigated. With higher atomic densities, the self-induced transparency (SIT) cannot be recovered even for 2πultrashort pulses. New features such as pulse splitting, red-shift and blue-shift of the corresponding spectra arise, and the component of central frequency gradually disappears.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.