基于相变松弛法则的水下爆炸空化模型研究

水下爆炸过程中存在着大量的空化现象,空化的产生、演化及其溃灭过程对于水下冲击波传播、爆炸气泡运动以及水下结构物冲击损伤都会产生重要影响。本文基于多相可压缩流体理论模型,考虑空化发生过程中汽-液两相流体亚平衡状态下两相之间发生的热力学-化学平衡机制,分析汽-液两相介质之间的质量和热量交换,从而实现对相变过程的自动捕捉。该系统的控制方程采用分步法处理,首先利用二阶MUSCL-Hancock格式和HLLC黎曼求解器来求解齐次双曲型方程,再采用牛顿迭代法求解相变方程。数值测试结果表明,本文的计算模型对于空化相变过程具有较好的捕捉能力。最后将该模型应用到水下近水面爆炸空化的数值模拟当中,研究发现空泡的溃灭压力峰值约为冲击波压力峰值的15%,有效作用时间是冲击波载荷有效作用时间的2倍以上。本文的空化相变模型能够为水下爆炸空化现象的机理研究提供重要支撑。     

CnSi(n=49,50)的理论研究

用量子化学从头算方法研究了C     

聚氧乙烯功能基复合修饰聚氨酯的合成 及其血液相容性研究(Ⅰ)

通过十八烷基聚氧乙烯和环氧氯丙烷的封端反应制备了α-环氧基-ω-十八烷基聚氧乙烯大单体.并采用BF     

三维超音进气道内外流场的数值模拟

用区域分裂有限体积法求解了三维Ｅｕｌｅｒ方程和Ｎａｖｉｅｒ－Ｓｔｏｋｅｓ方程。空间方向采用Ｒｏｅ平均算法，时间方向采用Ｒｕｎｇｅ－Ｋｕｔｔａ方法。对某飞航导弹的全弹身－进气道流场和某型号战斗机进气道内外流场进行了计算，得出了满意的结果。     

非均匀网格泊松方程高阶紧致离散及加速方法

本文将非均匀网格直接离散的高阶紧致格式从二维推广到三维,结合附加修正多重网格方法提高了传统迭代方法的收敛效率,并且验证了该格式在不同边界条件的数值表现。结果表明:该方法可以有效的求解NS方程中的压力泊松方程.     

Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 10^9 have been achieved.     

Numerical simulation of filler metal droplets spreading in laser brazing

A finite element model was constructed using a commercial software Fidap to analyze the Cu-base filler metal droplet spreading process in laser brazing,in which the temperature distribution,droplet geometry, and fluid flow velocity were calculated.Marangoni and buoyancy convection and gravity force were considered,and the effects of laser power and spot size on the spreading process were evaluated.Special attention was focused on the free surface of the droplet,which determines the profile of the brazing spot. The simulated results indicate that surface tension is the dominant flow driving force and laser spot size determines the droplet spreading domain.     

基于下变频和IQ解调的外差型相位敏感光时域反射技术的模式识别EI北大核心CSCD

基于模拟下变频器、数字IQ解调和反向传播(BP)神经网络,采用现场可编程门阵列结合数字信号处理器(FPGA+DSP)的数据采集和处理架构,提出了一种全嵌入式高信噪比(SNR)、高分辨率和低成本的外差型相位敏感光时域反射(Φ-OTDR)技术模式识别方法。针对外差型Φ-OTDR技术,使用DSP、FPGA及其外围硬件电路替代原有的GHz级高速采集卡和信号发生器,减小了系统的体积和成本。在此基础上,设计了基于时空域二维图提取形态学特征的方法,并采用BP神经网络进行分类识别;所提方法相对于传统的针对一维信号进行模式识别的方法误报率更低、识别率更高。实验结果表明,所设计的基于FPGA+DSP全嵌入式并行信号处理架构满足实时监测的要求,SNR高达12.43dB,事件识别准确率达到97.78%。     

Effect of Chemicals on Chemical Mechanical Polishing of Glass Substrates

We investigate the effect of chemicals on chemical mechanical polishing （CMP） of glass substrates. Ceria slurry in an ultra-low concentration of 0.25 wt. % is used and characterized by scanning electron microscopy. Three typical molecules, i.e. acetic acid, citric acid and sodium acrylic polymer, are adopted to investigate the effect on CMP performance in terms of material removal rate （MRR） and surface quality. The addition of sodium acrylic polymer shows the highest MRR as well as the best surface by atomic force microscopy after CMP, while the addition of citric acid shows the worst performance. These results reveal a mechanism that a long-chain molecule without any branches rather than small molecules and common molecules with ramose abundant-electron groups is better for the dispersion of the slurry and thus better for the CMP process.     

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_0.7Ga_0.3As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.