采用MBE生长1.6～2.3μm InGaAsSb/AIGaAsSb多量子阱

采用分子束外延生长了不同In组分的InGaAsSb/AlGaAsSb多量子阱材料.X射线衍射发现量子阱材料有多级衍射卫星峰出现,表明量子阱的界面均匀性和质量较好.研究了不同In组分与光致发光波长的关系,光荧光谱测试表明.所制备的不同In组分的InGaAsSb/AlGaAsSb多量子阱材料,在室温下的发光波长可以覆盖1....     

可见分光光度法研究In3+与Zr4+、Ce3+、Rh3+和Ga3+的浮选分离

用可见分光光度法研究了溴化四丁基铵-碘化钾-水体系浮选分离铟的行为,探讨了In3+与-些金属离子分离的条件.结果表明,当溶液中溴化四丁基铵和碘化钾的浓度分别为6.0×10-4mol/L和5.0×10-3mol/L时,In3+与Zp+、Ce3+、Rh3+和Ga3+可定量分离.     

乙醇水溶液析相萃取分离和富集TlCl4-

研究了乙醇-(NH4)2SO4-罗丹明B体系析相萃取和富集Tl(Ⅲ)的行为及与一些金属离子分离的条件。(NH4)2SO4能使乙醇的水溶液分成两相,在分相过程中,TlCl4-与罗丹明B(RhB)生成的[TlCl4-][RhB+]能被乙醇相完全萃取。当溶液中罗丹明B,(NH4)2SO4和乙醇分别为0.28 mg/mL,0.30 g/mL和质量分数30%时,Tl(Ⅲ)的萃取率达到97.9%以上,Co(Ⅱ),Pb(Ⅱ),Fe(Ⅲ),Mg(Ⅱ),Ru(Ⅲ),Ni(Ⅱ),Cr(Ⅲ),Ag(Ⅰ)和Cu(Ⅱ)基本不萃取,实现了Tl(Ⅲ)与上述金属离子的分离。方法已应用于合成水样中Tl(Ⅲ)的分离和测定。     

分光光度法研究水-乙醇体系析相萃取分离和富集PdBr_4~(2-)

用可见分光光度法研究了水-乙醇体系析相萃取分离和富集PdBr42-的行为及与一些金属离子分离的条件.结果表明,(NH4)2SO4能使乙醇的水溶液分成两相,在分相过程中,Pd(Ⅱ)与KBr生成的PdBr42-与质子化乙醇(C2H5OH2+)形成的缔合物[PdBr42-][C2H5OH2+]2能被乙醇相完全萃取.当乙醇、KBr和(NH4)2SO4分别为30%、6.0×10-3 mol/,L、0.3 g/mL,pH 3时,PdBr42-的萃取率达到98.6%以上,Fe(Ⅲ),Al(Ⅲ),Cr(Ⅲ),Ag(Ⅰ),Cu(Ⅱ),Ni(Ⅱ),Zn(Ⅱ),Co(Ⅱ),Mn(Ⅱ),V(Ⅴ),U(Ⅵ),Pb(Ⅱ),Ru(Ⅲ),Rh(Ⅲ)和Hg(Ⅱ)基本不被萃取,实现了Pd(Ⅱ)与上述金属离子的分离.     

簇合物(F2GaN3)n(n=1～4)的理论研究

采用密度泛函理论B3LYP/6-311+G*方法,计算研究了(F2GaN3)n(n=1～4)簇合物的结构和性质.研究表明,簇合物(F2GaN3)n(n=2～4)的优化构型均拥有Ga-Na-Ga连接的环状结构.讨论了几何参数随聚合度的变化关系.三聚体的船式构象较椅式构象的能量低16 kJ·mol-1,具有S4对称性的四聚...     

气相色谱-质谱法同时测定蔗汁中的莠去津与莠灭净残留量

建立了气相色谱-质谱法(GC-MS/SIM)同时测定蔗汁样品中莠去津和莠灭净的方法,并优化了样品前处理和色谱条件.在优化条件下,两种除草剂在0.00-0.60 mg/L范围内线性关系良好,方法的检出限(S/N=3)均为0.001 mg/L.在加标水平为0.050-0.100 mg/L时,两种除草剂的回收率在93%-10...     

Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas （2DEG） is very sensitive to neutrons. At a low fluence of 6.13 × 10^15 cm^-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 × 10^16 cm^-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit （product of ns×μ ） of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns × μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.     

Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes

Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300 K is obtained at a fixed forward current after switching from N2 to 10%H2＋N2. The sensor responses under different concentrations from 50ppm H2 to 10%H2＋N2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N2 and air atmosphere at 300 and 373K are compared. Oxygen in air azcelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity Of the sensor are calculated.     

飞秒激光脉冲作用下氢原子径向和角向波包的产生与演化

采用劈裂-伪谱方法求解激光场中的含时薛定谔方程,探讨飞秒激光脉冲中氢原子波包的演化过程.研究了氢原子激发态的径向分布,角向分布、各态布居和电子云密度随时间的变化关系.在用共振激光脉冲控制氢原子波包演化的过程中径向分布、角向分布、各态布居和电子云密度随时间发生变化,但发现径向分布和角向分布在变化的过程中始终经过一些特殊点,并从理论上分析了存在这些特殊点的原因.     

半导体激光器巴条封装应力及评价

为了快捷而有效地检测半导体激光器的封装应力,设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数,并利用有限元软件模拟,通过半导体能带与应力理论,说明偏振度与封装应力的影响关系。实验表明,巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算,封装应力为141.92 MPa,偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度,可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。