含有较多磁单极的一类加速天体的引力场

本文在文献[1]的基础上,考虑到中心质量除具有电荷之外还具有磁荷(含大量磁单极),又考虑到宇宙项的存在,解Einstein-Maxwell方程组,得到了一个新的度规和Maxwell张量,并对磁荷q和加速度a的作用进行了讨论,得到一些新的结果。     

石榴石磁泡薄膜各向异性常数K_u和K_l的转矩法测量

本文详细研究了GGG(Gd_3Ga_5O_(12))单晶基片的磁转矩与其几何参量及有关物理参量的关系,提出了由转矩曲线测量石榴石磁泡薄膜单轴各向异性常数K_u和立方磁晶各向异性常数K_l过程中扣除基片影响的一种方法。在此基础上利用二元回归法由实测的转矩曲线求出K_u和K_l,以及K_u和K_l的温度关系曲线。     

面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：     

软X射线条纹相机用于激光等离子体辐射温度的测量方法

本文提出了软X射线条纹相机与吸收膜相耦合测量等离子体温度的实验原理与方法,编制了数值计算程序SCC,给出了平面金靶在1.06μm激光(LF—II~=激光装置)作用下,靶面功率密度约10~(14)W/cm~2的辐射温度。并对温度处理中存在的误差,以及把此方法推广到能谱的时间分辨和温度的空间分辨测量中的可能性进行了讨论。     

网络最小树的一种矩阵算法

求网络最小树问题，人们熟知常用的方法有“避圈法”和“破圈法”，这些方法有其直观易解的优点，然而它们毕竟是要在图上作业（在图上完成）。由于网络与距离矩阵的对应关系，本文将利用矩阵性质给出该问题的一个矩阵解法。     

不对称Baylis-Hillman反应研究进展

综述了光学活性的活化烯、亲电试剂、催化剂和溶剂对Baylis_Hillman反应的不对称诱导效果     

10~(15)eV附近初级宇宙线能谱指数的测量

本文介绍一个通过测量高能宇宙线初级粒子在广延大气簇射中发射的切伦柯夫光脉冲来确定初级宇宙线能谱的方法和装置.给出了在能量范围2.9×10~(14)-4.0×10~(15)eV内,初级宇宙线积分能谱幂指数γ=1.80±0.11.     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.