流动注射离子选择电极电位法测定水中氟化物

N.T.Crosby等曾详细地比较了饮用水和其它水质中氟化物的各种比色法和离子选择电极法,指出电极法的有效性。本文以自制流通氟电极为检测器,用于流动注射分析,测定了80样次/时的样品,减少了试剂和样品消耗,用峰高(峰顶电位和基线电位差)表示分析结果,消除了基线电位随时间漂移影响。同时,在其分析体系中,恒定的流速、高度重复的     

一道亚太数学奥赛题的推广

2004年3月第16届亚太地区数学奥林匹克竞赛第5题为证明:对任意正实数a,b,c,均有(a2 2)(b2 2)(c2 2)≥9(ab bc ca).文[1]对该题提供了一种证明方法,从证明来看,该题貌似简单,实际上却有难度,本文从该题的本质考虑,得到一个一般性的结论.引理设hi>-1,(i=1,2,…,n),且hihj≥0,则ni=1(1 hi)≥1 ni=1hi,证用数学归纳法即可.定理设n为正整数,xi≥0(i=1,2,…,n 1),则n 1i=1(xi2 n)≥(n 1)n2n1≤i相似文献   

Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

加权二次有理Bézier插值曲线

在本文中,给定一组有序空间数据点列及每个数据点的切矢向量,利用加权二次有理Bézier曲线对数据点作插值曲线,使该曲线具有C1连续性,并且权因子只是对相应顶点曲线附近产生影响,同调整两个相邻的权因子可以调整这两个相邻顶点之间的曲线和它的控制多边形.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

2005年高考湖南试卷的分析

今年是湖南省单独命题的第二年,高考数学卷在去年的基础上稳中有变、变中有新;试题的安排由易到难,有一定的层次和梯度;客观题除注重基础外,也注重能力立意方面的综合性和创新性;最后两道压轴题落脚在与数列有关的应用     

薄铝埋点等离子体K线光谱半定量诊断

高温等离子体系统中存在等离子体流体力学运动演化过程、离子的离化分布演化动力学过程、高剥离态离子谱发射过程及发射芬光辐射输运过程等，而且高温等离子体系统通常是非平衡系统，所以定量研究高温等离子体系统的发射X光谱和高温等离子体对X光的吸收是一个非常复杂的问题。为了模拟和解释实验测得的激光等离子体发射光谱，提出了一种薄埋点靶：直径为φ200μm厚度为0．1μm的铝点埋在20μm厚的CH膜底衬中，表面再覆盖0．1μm厚CH膜。     

用脉冲激光同轴全息技术测量微射流

强冲击载荷下自由表面的粒子喷射现象还没有被清楚认识，很难从理论上给以准确的计算模型，因而从实验测定材料在冲击载荷下自由面面喷射物质的分布和粒子尺寸大小就显得非常重要。测量微粒场的脉冲激光同轴全息技术，具有在纳秒或更在短时间内“固化”运动微粒场、测量精度高、景深长、光路简单和获得的信息量大等优点。这些优势使得脉冲激光同轴全息技术成为研究微喷射场的重要测试手段之一。