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本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO2点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm.
关键词:
激光干涉光刻
纳米阵列
刻蚀
氟碳有机聚合物 相似文献
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Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition
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Nonpolar a-plane CaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/Ⅲ ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed. 相似文献
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The n-type GaAs/AlxGa1-xAs multiple quantum well infrared photodetectors have been demonstrated without any grating couplers. We have achieved a responsivity Rv of 1.7×105V/W and a detectivity Dλ* of 4.0×1010 cm (Hz)1/2/W for a wavelength of 8.4 μm at a temperature T = 77 K in normal incidence. 相似文献